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  • Blackwell Publishing Ltd  (35)
  • Cambridge University Press  (18)
  • American Institute of Physics (AIP)  (16)
  • 1
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    Field evidence for turbulence during flow of basalt magma through conduits from southwest Mull (1986)
    Cambridge University Press
    Details
    Publication Date: 1986-11-01
    Description: The swarm of Palaeocene inclined sheets around Loch Scridain in southwest Mull includes basaltic sheets which contain abundant metasedimentary xenoliths that show evidence for having been partially molten. In contrast with the majority of dyke-like conduits worldwide, which have essentially planar margins, the contact of one of these xenolithic sheets with Moine metasediments is irregular along a segment where it crosses interbedded psammites and pelites. Relatively fusible mica schists have been excavated by the magma, on either side of a massive refractory quartzite horizon. Furthermore, the dolerite of the sheet shows only a slight reduction of grain size, through a zone 0.5 m wide, adjacent to its margin, in contrast with the pronounced marginal chilling which characterizes most intrusions of the Loch Scridain swarm. These field relationships are interpreted as evidence that the basic magma which formed this sheet flowed with local turbulence during its emplacement. The estimated liquidus of the magma (1130 °C at 1 atm) is approximately 200 °C above the solidus of pelitic horizons in the country rock, but far below the solidus of the quartzites.
    Print ISSN: 0016-7568
    Electronic ISSN: 1469-5081
    Topics: Geosciences
    Published by Cambridge University Press
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  • 2
    Electronic Resource
    Electronic Resource
    Microstructural stability of epitaxial CoSi2/Si (001) interfaces (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4853-4856 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial films of cobalt silicide grown on (001) Si by molecular beam epitaxy have been characterized by transmission electron microscopy. Apart from (001) oriented CoSi2 grains, regions of 〈221〉 type orientations were also found. The 〈221〉 oriented domains were found to be associated with pronounced facetted depressions on the (001) Si surface. Empirical observations suggest that the formation of 〈221〉 CoSi2 domains and the formation of other types of silicide stoichiometries may be related. It is demonstrated that these microstructural instabilities may be suppressed by the codeposition of cobalt and silicon rather than simply by depositing cobalt and reacting with the Si substrate to produce (001) CoSi2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349026
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  • 3
    Electronic Resource
    Electronic Resource
    Magnetic field effects on triplet exciton fission and fusion in a polydiacetylene (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 6642-6646 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have studied the origin and decay dynamics of triplet excitons in the conjugated polymer poly(4BCMU) in its sol(yellow) and gel(red) phases. Wavelength and intensity dependencies of the triplet yield show that the triplet exciton cannot be produced by excitation into the singlet exciton edge but only from higher lying states. The observed lifetime of the triplet state, coupled with the magnetic field dependence of the triplet state production and decay, indicate that the triplet state is created by a fission process from the excited singlet. The time and magnetic field dependence of the triplet exciton decay indicate that the triplet exciton decay in the red phase occurs by diffusive bimolecular fusion, but in the yellow phase the triplet exciton decay is nondiffusive. We postulate that the unimolecular decay of the triplet exciton in the yellow phase results from exciton pinning by conformational disorder.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456281
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  • 4
    Electronic Resource
    Electronic Resource
    New instrument for microbeam analysis incorporating submicron imaging and resonance ionization mass spectrometry (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 3168-3176 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new reflectron time-of-flight mass spectrometer for surface analysis has been developed that incorporates a Schwarzschild all-reflecting microscope. The instrument is configured for secondary ion mass spectrometry and secondary neutral mass spectrometry using either ion beam bombardment or laser ablation for sample atomization. The sample viewing and imaging system of this instrument enables in situ laser microanalysis with a lateral resolution below 1 μm. The major advantages of using a Schwarzschild objective include good lateral resolution, easy design, low cost, complete achromatism, and both viewing the sample and extracting secondary or photoions normal to its surface. The instrument has a mass resolution of m/Δm≥2000 and is capable of measuring elemental and isotopic compositions at trace levels using resonance ionization. The isotopic ratios of trace concentrations of Ti in μm size SiC grains separated from meteorites were measured. The extremely low ablation laser power used in the above experiment points to the possibility of using low-cost laser systems for laser microprobe applications. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145546
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  • 5
    Electronic Resource
    Electronic Resource
    Control of misoriented grains and pinholes in CoSi2 grown on Si(001) (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2811-2813 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two types of growth conditions have been obtained that consistently overcome the formation of epitaxially misoriented grains in CoSi2/Si(001). One is by co-deposition of Co and Si at Co-rich ratios at a substrate temperature of ∼500 °C. This method yields films of low resistivity (16 μΩ cm) and low ion channeling minimum yield (χmin≈2%), but the misfit dislocation densities are of the order of 105 cm−1. The second way uses a template method of growth after an epitaxial Si buffer layer. Films grown this way have somewhat higher resistivities than those grown by the first method, but have lower misfit dislocation densities. The strain relief mechanism in these films also appears to be different from that of co-deposited films. Pinhole densities in films grown by both methods are below our detection limit of 103 cm−2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104201
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  • 6
    Electronic Resource
    Electronic Resource
    Device applications of vanadium-doped silicon-dioxide (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4082-4084 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This study has been undertaken in an attempt to investigate the possible applications of transition-metal-doped amorphous silicon-dioxide in floating-gate avalanche-metal/silicon-dioxide/silicon-type nonvolatile memories, with the objective of developing an electrically erasable programmable read-only memory structure with low WRITE and ERASE voltages, (e.g., (approximately-equal-to)5 V) which does not depend for its operation on the very thin tunneling oxides (i.e., ≤80 A(ring)) currently used and which are a major source of device instability and degradation. Results are presented for 200-A(ring)-thick vanadium-doped silicon-dioxide films which show reproducible current-voltage characteristics at much reduced voltages compared with conventional thin thermal oxides.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343340
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of a substrate on the phase transformations of amorphous TiSi2 thin films (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 540-544 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystallization of an amorphous TiSi2 evaporated film has been studied on both poly-Si and SiO2 substrates. A metastable form of TiSi2 (base-centered orthorhombic; a=3.62 A, b=13.76 A, and c=3.605 A) [P. G. Cotter, J. H. Kohn, and R. A. Potter, J. Am. Ceram. Soc. 39, 11 (1956)] is formed first at a temperature of approximately 350 °C on both substrates. This phase consumes the entire amorphous layer before undergoing a polymorphic transformation to face-centered orthorhombic TiSi2 (a=8.24 A, b=4.78 A, and c=8.54 A) [F. Laves and H. J. Wallbaum, Z. Kristallogr. 101, 78 (1979)] at 600 and 800 °C on poly-Si and SiO2, respectively. These transformations were investigated using in situ resistivity, x-ray diffraction, and transmission electron microscopy. The room-temperature resistivities observed were 96 and 20 μΩ cm for the base-centered and face-centered TiSi2, respectively. The enhanced polymorphic transformation on poly-Si over SiO2 is explained by a lowering of surface energy barrier to nucleation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338254
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  • 8
    Electronic Resource
    Electronic Resource
    Thermal stability of the Al/PdxW100−x/Si contact systems (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1886-1892 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interactions of thin films of Al and Pd-W alloys (Pd80W20 and Pd20W80) deposited on Si and on SiO2 have been studied using Auger-electron spectroscopy, Rutherford backscattering spectrometry, x-ray diffraction, and forward current-voltage measurements of Schottky-barrier height. For the bilayer films deposited on the inert substrate of SiO2, Pd reacts with Al, forming Al-rich Al-Pd intermetallic compounds at 400 °C. Furthermore, in the Pd-rich alloys (Pd80W20) Al permeates through the whole alloy film readily at 500 °C, while in the W-rich Pd20W80 the integrity of the alloy film is preserved even following annealing at 600 °C. For the bilayer films deposited on single-crystal Si, the results of annealing show extraction of Pd to both sides of the alloy, forming Pd2Si at the Si side and Al-Pd intermetallic compounds at the Al side. In the case of the Pd-rich alloy (Al/Pd80W20/Si) contact deterioration due to Al penetration to the substrate interface is observed at 500 °C and possibly at 400 °C. In the case of the W-rich alloy (Al/Pd20W80/Si) the stability of the contact is preserved even following annealing at 550 °C for 30 min; the structure after the annealing is Al-Pd/Pd-W/Pd2Si/Si. The W-rich alloy is very promising for contact applications in Si devices due to the fact that both a shallow silicide contact and a built-in diffusion barrier are simultaneously obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335992
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  • 9
    Electronic Resource
    Electronic Resource
    Grain size measurement using magnetic and acoustic Barkhausen noise (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3199-3201 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results on annealed nickel show that the total number of counts of both magnetic and acoustic Barkhausen signals vary inversely with grain size. In decarburized steels the total number of counts and the amplitude of both Barkhausen signals increase in proportion to grain size. The paper addresses these results in context of grain size, grain-boundary segregation, and precipitate effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338900
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  • 10
    Electronic Resource
    Electronic Resource
    A study on the effect of dislocation on the magnetic properties of nickel using magnetic NDE methods (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3196-3198 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dislocations affect the magnetic properties of ferromagnetic materials by pinning the domain walls. The primary mechanism is interaction between the stress fields of dislocation and domain walls. Using magnetic nondestructive methods, namely the acoustic Barkhausen noise (AB), magnetic Barkhausen noise (MB), and the hysteresis curves, we have studied these interactions. The three measurements give different types of information. AB provides information about non-180° type domain wall interaction, MB primarily provides information about 180° domain wall interaction, and the hysteresis curve about both these interactions as well as about rotation of domain walls. The paper presents results obtained on polycrystalline nickel which was first deformed and then annealed at different temperatures in order to achieve different dislocation densities. The results show that AB and hysteresis loss follow the same trend as hardness. MB results, however, change in a more complex fashion which is sensitive to grain recrystallization as well as dislocation structure. Interesting features of these results will be discussed in detail.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338899
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