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  • 1
    Electronic Resource
    Electronic Resource
    Microstructural stability of epitaxial CoSi2/Si (001) interfaces (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4853-4856 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial films of cobalt silicide grown on (001) Si by molecular beam epitaxy have been characterized by transmission electron microscopy. Apart from (001) oriented CoSi2 grains, regions of 〈221〉 type orientations were also found. The 〈221〉 oriented domains were found to be associated with pronounced facetted depressions on the (001) Si surface. Empirical observations suggest that the formation of 〈221〉 CoSi2 domains and the formation of other types of silicide stoichiometries may be related. It is demonstrated that these microstructural instabilities may be suppressed by the codeposition of cobalt and silicon rather than simply by depositing cobalt and reacting with the Si substrate to produce (001) CoSi2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349026
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  • 2
    Electronic Resource
    Electronic Resource
    Phase transformations of alloys on a reactive substrate: Interaction of binary alloys of transition and rare-earth metals with silicon (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 705-710 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transition and rare-earth metals have been found to interact with single-crystal Si in a way that allows a division into three distinct classes: near noble, refractory, and rare earth. Recently, attention has turned to the reaction of their binary alloys with Si. In this paper we will try to demonstrate that by regarding the alloy-Si reaction as a phase transformation of alloys under the influence of a reactive substrate, we can undertake a systematic approach for the study of this kind of phase transformations involving ternary elements. In essence we show that the kinetic path taken by the alloy-Si interaction can be understood and anticipated from the reaction characteristics of the proper metal/Si bilayers and the reaction in the alloy itself. Results will be shown for Er-Pt, and Gd-Ti alloys on Si which confirm this systematic approach, which is also supported by previously published data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336186
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  • 3
    Electronic Resource
    Electronic Resource
    Thermal stability of the Al/PdxW100−x/Si contact systems (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1886-1892 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interactions of thin films of Al and Pd-W alloys (Pd80W20 and Pd20W80) deposited on Si and on SiO2 have been studied using Auger-electron spectroscopy, Rutherford backscattering spectrometry, x-ray diffraction, and forward current-voltage measurements of Schottky-barrier height. For the bilayer films deposited on the inert substrate of SiO2, Pd reacts with Al, forming Al-rich Al-Pd intermetallic compounds at 400 °C. Furthermore, in the Pd-rich alloys (Pd80W20) Al permeates through the whole alloy film readily at 500 °C, while in the W-rich Pd20W80 the integrity of the alloy film is preserved even following annealing at 600 °C. For the bilayer films deposited on single-crystal Si, the results of annealing show extraction of Pd to both sides of the alloy, forming Pd2Si at the Si side and Al-Pd intermetallic compounds at the Al side. In the case of the Pd-rich alloy (Al/Pd80W20/Si) contact deterioration due to Al penetration to the substrate interface is observed at 500 °C and possibly at 400 °C. In the case of the W-rich alloy (Al/Pd20W80/Si) the stability of the contact is preserved even following annealing at 550 °C for 30 min; the structure after the annealing is Al-Pd/Pd-W/Pd2Si/Si. The W-rich alloy is very promising for contact applications in Si devices due to the fact that both a shallow silicide contact and a built-in diffusion barrier are simultaneously obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335992
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of a substrate on the phase transformations of amorphous TiSi2 thin films (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 540-544 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystallization of an amorphous TiSi2 evaporated film has been studied on both poly-Si and SiO2 substrates. A metastable form of TiSi2 (base-centered orthorhombic; a=3.62 A, b=13.76 A, and c=3.605 A) [P. G. Cotter, J. H. Kohn, and R. A. Potter, J. Am. Ceram. Soc. 39, 11 (1956)] is formed first at a temperature of approximately 350 °C on both substrates. This phase consumes the entire amorphous layer before undergoing a polymorphic transformation to face-centered orthorhombic TiSi2 (a=8.24 A, b=4.78 A, and c=8.54 A) [F. Laves and H. J. Wallbaum, Z. Kristallogr. 101, 78 (1979)] at 600 and 800 °C on poly-Si and SiO2, respectively. These transformations were investigated using in situ resistivity, x-ray diffraction, and transmission electron microscopy. The room-temperature resistivities observed were 96 and 20 μΩ cm for the base-centered and face-centered TiSi2, respectively. The enhanced polymorphic transformation on poly-Si over SiO2 is explained by a lowering of surface energy barrier to nucleation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338254
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  • 5
    Electronic Resource
    Electronic Resource
    Control of misoriented grains and pinholes in CoSi2 grown on Si(001) (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2811-2813 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two types of growth conditions have been obtained that consistently overcome the formation of epitaxially misoriented grains in CoSi2/Si(001). One is by co-deposition of Co and Si at Co-rich ratios at a substrate temperature of ∼500 °C. This method yields films of low resistivity (16 μΩ cm) and low ion channeling minimum yield (χmin≈2%), but the misfit dislocation densities are of the order of 105 cm−1. The second way uses a template method of growth after an epitaxial Si buffer layer. Films grown this way have somewhat higher resistivities than those grown by the first method, but have lower misfit dislocation densities. The strain relief mechanism in these films also appears to be different from that of co-deposited films. Pinhole densities in films grown by both methods are below our detection limit of 103 cm−2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104201
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  • 6
    Electronic Resource
    Electronic Resource
    High-speed X-ray diffraction and in situ resistivity measurements at temperatures of 100 to 1000 K (1989)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 22 (1989), S. 523-527 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: A system has been constructed which uses a primary-beam focusing monochromator Debye–Scherrer X-ray method to perform simultaneously in situ X-ray diffraction and resistivity measurements at temperatures of 100 to 1000 K. The Inel curved linear detector, which is capable of recording 120° of 20 angle without moving the detector, makes the Debye–Scherrer geometry possible for high-speed dynamic studies. The angular resolution of this system is sufficient to observe the separation of a mixture of tungsten and molybdenum powders. The sensitivity of the system makes it possible to record the diffraction pattern from a 100 Å gold film. The sheet resistivity of the sample can be recorded simultaneously to provide a structure-property correlation. Comparisons with other X-ray diffraction methods using thin films are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889889006412
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  • 7
    Electronic Resource
    Electronic Resource
    Energy balance and ground thermal regime studies broughton Island, Northwest Territories, Canada (1977)
    Springer
    Meteorology and atmospheric physics 25 (1977), S. 251-272 
    Details
    ISSN: 1436-5065
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geography , Physics
    Description / Table of Contents: Zusammenfassung Es wird die Beziehung zwischen Energiebilanz und bodennahen thermischen Verhältnissen über verschiedenen Oberflächen der Tundra in niedrigen arktischen Gebieten untersucht. Bowen-Verhältnis und die Daten des Energiehaushaltes weisen auf das Überwiegen des latenten Wärmeflusses über dem frei verdunstenden Gelände hin. Der fühlbare Wärmefluß war negativ entsprechend der beständigen bodennahen Inversion und lieferte die Energie für die Verdunstung. Der Wärmefluß im Boden war bis zum 6. Juli sehr klein und eine folgende starke Zunahme bewirkte ein jähes Eindringen des Auftauens des Bodens. Das tiefste gemessene Eindringen (80 cm) wurde im feuchten sandigen Boden erreicht im Vergleich mit nur 50 cm Tiefe im angrenzenden Lehmboden trotz der Ähnlichkeit zwischen den Bowen-Verhältnissen in beiden Böden. Energiebilanzwerte erklären nicht die Schichtenunterschiede und unabhängige Bodenfaktoren scheinen den größeren Einfluß auf das Schmelzen des Bodeneises auszuüben. Die Arbeit schließt mit einer Diskussion der Bowen-Verhältnisse und der Energiebilanz im Vergleich mit Untersuchungen in anderen schneefreien Tundra-Gebieten.
    Notes: Summary This paper examines the relationship between energy balance and ground thermal regime over a variety of tundra surfaces in a low arctic environment. The Bowen ratio and energy balance data emphasized the dominance of latent heat fluxes over the freely evaporating terrain. The sensible heat flux was negative, owing to persistent surface inversions, and supplied energy for evaporation. The ground heat flux was minimal until July 6 and the major increase on that date resulted in a sharp rise in the rate of ground thawing. The deepest measured penetration (80 cm) was achieved in moist sandy soil, compared with 50 cm depth in adjacent clay loam, despite the similarity between Bowen ratios at both sites. Energy balance data do not account for active layer variations and independent soil factors appear to exert the major control on ground ice melt. The paper concludes with a discussion of Bowen ratios and energy balance at the study area vis-a-vis other snowfree tundra environments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02321799
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  • 8
    Electronic Resource
    Electronic Resource
    Energy balance and ground thermal characteristics during periods of soil freezing at Guelph, Ontario, Canada (1982)
    Springer
    Meteorology and atmospheric physics 31 (1982), S. 113-126 
    Details
    ISSN: 1436-5065
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geography , Physics
    Description / Table of Contents: Zusammenfassung In dieser Arbeit werden die Energiebilanz und thermische Bodencharakteristiken, die mit em Eindringen des Frostes und der Entwicklung der Schneedecke zusammenhängen, in den Wintern 1975 und 1976 an zwei benachbarten Plätzen in der Nähe von Guelph untersucht. Der stärker exponierte höher gelegene Platz hatte in beiden Jahren nur eine dünne Schneedecke (〈 2 cm), was ein ranches Eindringen den Frostes erleichterte und als Folge große Beträge von latenter Schmelzwärme auslöste, was in Bodenwärmeverlusten von mehr als 4 MJ m−1 Tag−2 zum Ausdruck kam. Die größere Schneehöhe (im Mittel 6,8 cm) an dem abgeschirmten tiefer gelegenen Platz verzögerte das Vordringen der Frostfläche und verminderte die damit verbundene Auslösung von Wärme im Boden, was den atmosphärischen Wärmefluß zu einem Beitrag von 78% zu dem Gesamtstrahlungsdefizit von 1975 befähigte. 1976 lieferte jedoch der Bodenwännefluß an dem tiefer gelegenen Platz mehr als 82% des Gesamtstrahlungsdefizits zufolge der im Vergleich mit dem früheren Winter später gebildeten Schneedecke.
    Notes: Summary This study investigates the energy balance and ground thermal characteristics associated with frost penetration and snowpack development during the 1975 and 1976 winters at two adjacent sites near Guelph. The more exposed upper site had a meagre snowpack (〈 2 cm) in both years, facilitating rapid frost penetration and the consequent release of large amounts of latent heat of fusion, reflected in ground heat losses in excess of 4 MJ m−1 day−2. These losses provided more than 74 percent of the net radiation deficit. The greater snowpack (average depth 6.8 cm) at the sheltered lower site retarded the penetration of the freezing plane and reduced the associated release of heat in the ground, which enabled the atmospheric heat fluxes to contribute 78 percent of the net radiation deficit in 1975. However, in 1976 the ground heat flux at the lower site provided more than 82 percent of the net radiation deficit due to a thinner and later-forming snowpack compared with the previous winter.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02311346
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  • 9
    Electronic Resource
    Electronic Resource
    Multiple elements of the S 2  -RNase promoter from potato (Solanum tuberosum L.) are required for cell type-specific expression in transgenic potato and tobacco (1998)
    Springer
    Molecular genetics and genomics 257 (1998), S. 132-142 
    Details
    ISSN: 1617-4623
    Keywords: Key words Self-incompatibility ; Pollen ; Style ; Cell type-specific enhancer ; Transgene
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract A functional analysis of the promoter of the S 2 -RNase gene from potato was performed in transgenic potato and tobacco plants, using a deletion series of S 2 -RNase promoter GUS fusions. A detailed histochemical and quantitative analysis of the transgenic tobacco plants revealed that S 2 promoter fragments ranging in size from 5.6 kb in length down to 0.2 kb mediate a weak developmentally regulated expression in the pistil, and strong ectopic expression in pollen. In the pistil, different expression patterns were seen depending on the transformant, the predominant one being characterised by expression in the stigma and the transmitting tract of the style, whereas a few plants showed expression exclusively either in the stigma or in the stylar transmitting tissue. All transformants also showed GUS expression in the placental epidermis of the ovary. Two sequences that are conserved between the potato S 1 -RNase and S 2 -RNase promoters, termed motif I and motif III, are located in a fragment of the S 2 promoter extending from position −200 to bp −100, and motif II, located between bp −498 and −480, was identified on the basis of sequence comparisons between pistil-specific promoters. Motif II was found to be dispensible for pistil-specific and for pollen-specific expression. Two submotifs, A and B, were identified within motif I. Both were essential for expression in the pistil but only B was necessary for expression in pollen. Although motif III has a similar bipartite structure and sequence to motif I, it was not sufficient to confer either pollen- or pistil-specific expression. However, deletion of motif III abolished pollen-specific expression in transient expression experiments, suggesting that an interaction between the two sequence motifs may be needed to specify cell type-specific expression. In transgenic potato the S 2 -RNase promoter also mediates expression in pollen and in the pistil; however, significantly fewer plants showed expression than in tobacco, with most plants also exhibiting GUS expression in other tissues.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s004380050632
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  • 10
    Electronic Resource
    Electronic Resource
    The role of multiple binding sites in the activation of zein gene expression by Opaque-2 (1996)
    Springer
    Molecular genetics and genomics 252 (1996), S. 723-732 
    Details
    ISSN: 1617-4623
    Keywords: Key words Opaque-2 ; 22 kD α-zeins ; Endosperm ; Transient gene expression ; Particle bombardment
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract  Opaque-2 (O2) encodes a transcriptional activator of the basic domain-leucine zipper (bZIP) class, which controls the expression level in maize endosperm of the 22 kD α-zeins and a number of non-storage proteins. The interaction of the O2 protein at three clustered binding sites on an isolated 22 kD zein gene promoter has been investigated. O2 is shown to transactivate transcription from these sites in tobacco mesophyll protoplasts as well as in maize endosperm cells transformed by particle bombardment. The binding sites have been mutated by base exchanges, singly or in different combinations, to determine their contribution to transactivation in vivo in both the leaf protoplast and the maize endosperm system. The effect of these mutations on binding of O2 in vitro was determined by electrophoretic mobility shift assays (EMSA), using O2 protein expressed in E. coli. Two of the sites seemed to be equally effective in responding to Opaque-2 in vivo in both cell types, although one of them does not contain an ACGT core sequence, and has a lower affinity for O2 in vitro than the ACGT-containing binding site. A third site, which has the lowest affinity of all three, confers no detectable O2-dependent promoter activation alone, but significantly increases activation in combination with either one of the other sites. Hence, weaker O2 binding sites can still mediate major O2-dependent effects when present in target promoters in vivo.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02173979
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