ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 11
    Electronic Resource
    Electronic Resource
    Magneto-optical properties and temperature dependence of SmCoDy films with perpendicular magnetic anisotropy (abstract) : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5997-5997 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous LRE-TM SmCo perpendicular magnetic film provides a promising candidate for perpendicular magnetic recording media.1 In order to improve the magneto-optical properties of SmCo films, we have studied the ternary system: Smy(Co100−xDyx)100−y films which were prepared by rf magnetron sputtering system. Because the Dy moment is antiferromagnetically coupled to the Co moment and Dy has a larger magnetic anisotropy, Dy addition will increase Ku and decrease Ms of LRE-TM films. With the Dy addition content increased from 0 to 10 at. %, the perpendicular anisotropy constant K⊥ (K⊥ = Ku(K⊥=Ku− 2πM2s) increased to improve the magneto-optical properties of SmCo films. The torque curve measurement and Kerr hysteresis loop of SmCoDy film had proved it was perpendicular magnetic film. In order to prevent RE metal selective oxidation of SmCoDy films, a protective layer AlN was used. AlN films were prepared by rf reactive sputtering.2 The temperature dependence of AlN/SmCoDy/glass were studied. Hc decreased rapidly when temperature increased while its Kerr angle decreased slightly. When the sample was cooled to room temperature, Hc and θk returned to its original value. The results show SmCoDy films may become new material of magneto-optical recording media. The long-term stability and microstructure of SmCoDy films have also been studied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347790
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 12
    Electronic Resource
    Electronic Resource
    Large low-field magnetoresistance in strained ultrathin Pr0.67Sr0.33MnO3 films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6749-6751 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strain effect on the low-field magnetoresistance (LFMR) in epitaxially grown Pr0.67Sr0.33MnO3 thin films has been studied. Very large LFMR and MR hysteresis have been found in compressive-strain ultrathin films grown on LaAlO3 (001) substrates when a magnetic field is applied perpendicular to the film plane. The LFMR ratio as high as 360% at H=1600 Oe and T=30 K was obtained from the MR hysteresis curve. The large LFMR depends strongly on the applied magnetic field direction as well as the film thickness. It is reduced to less than 10% when the film thickness is about 20 nm. In comparison, tensile-strain films on SrTiO3(001) show positive LFMR, and almost strain free films on NdGaO3 (110) show very small LFMR (〈2%), at comparable magnetic fields and temperatures. These effects were found to be closely related to the strain-induced magnetic anisotropy. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372829
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 13
    Electronic Resource
    Electronic Resource
    Quasilinear evolution of the ion cyclotron beam-anisotropy instability in a current carrying plasma (1999)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 6 (1999), S. 2588-2597 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution of particle velocity moments and wave spectra during the quasilinear saturation of the proton beam-anisotropy instability in a current carrying plasma is studied. For initial plasma moments characteristic of the near-Earth plasma sheet boundary layer, it is found that the saturation of the ion beam-anisotropy instability drives a field-aligned current, which self-consistently excites a kink-like mode. The driven current allows the wave fields of current driven mode to grow to amplitudes comparable to that of the anisotropy instability and facilitates more rapid isotropization of the unstable anisotropic beam components and saturation of the beam-anisotropy instability. This work has general relevance to the study of field-aligned instabilities in plasmas where the excited waves carry a net momentum density away from the source of instability. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.873530
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 14
    Electronic Resource
    Electronic Resource
    Drop deformation, breakup, and coalescence with compatibilizer (2000)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 12 (2000), S. 484-489 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of copolymers on the breakup and coalescence of polybutadiene (PB) drops in polydimethylsiloxane (PDMS) is studied using a four-roll mill flow cell. Copolymers are produced at the interface by a reaction between functionalized homopolymers. They reduce the interfacial tension and thus enhance breakup; they also inhibit coalescence of drops. Under the conditions of our experiments, the latter effect is much more significant than the former. For example, the addition of copolymer sufficient to reduce the interfacial tension by only 3% relative to the bare interface value is found to reduce the critical capillary number Cac for coalescence by a factor of 6. The critical capillary number for coalescence in the absence of copolymer is also measured for the first time. It is found to scale with the drop radius a as Cac∼a−0.82±0.03 and with the viscosity ratio λ as Cac∼λ−0.41±0.06. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.870254
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 15
    Electronic Resource
    Electronic Resource
    Domain wall resistance in ultrathin manganite films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6952-6954 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resistance related to magnetic domain walls in compressive-strained epitaxial manganite ultrathin films has been studied. The samples were demagnetized in different ways to induce either multidomain or single domain states. Very large difference in resistance was observed between the two states, which was attributed to the domain wall resistance. The magnitude of the domain wall resistance was found to be different in different manganite compounds. We have shown that large domain wall resistance can be obtained in strained ultrathin manganite films and the result cannot be simply explained by the existing models. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1362645
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 16
    Electronic Resource
    Electronic Resource
    Role of strain in magnetotransport properties of Pr0.67Sr0.33MnO3 thin films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7409-7414 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the strain effects on the structural and magnetotransport properties of Pr0.67Sr0.33MnO3 (PSMO) thin films. The PSMO films were epitaxially grown on LaAlO3 (001), SrTiO3 (001), and NdGaO3 (110) substrates that induce biaxial compressive, tensile, and almost no strain in the films, respectively. The film thickness t, varied between 4–400 nm, was used as another controlling parameter of strain for each type of film. There exist two distinct thickness ranges with different thickness dependence of the magnetotransport properties. For t〈20 nm, the zero-field resistance peak temperature (Tp) and the high-field magnetoresistance (HFMR) properties are critically dependent on the thickness and the substrate. For t〉20 nm, the Tp and the HFMR ratio show weak t dependence. The results show evidence for the effects of the Jahn–Teller type distortion as well as disorders on the resistive transition temperature and the HFMR. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373002
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 17
    Electronic Resource
    Electronic Resource
    Studies of the magnetic anisotropies of Co(11¯00)/Cr(211) and Co(112¯0)/Cr(100) multilayers : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4790-4792 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co(11¯00)/Cr(211) and Co(112¯0)/Cr(100) multilayers have been simultaneously prepared on MgO(110) and MgO(100) substrates, respectively, by molecular beam epitaxy. They show however distinct magnetic anisotropic behavior which coincides with their magneto–crystalline anisotropy. Magneto–optical Kerr effect shows the existence of a unique easy axis and strong in-plane uniaxial magnetic anisotropy in Co(11¯00)/Cr(211) multilayers, which is induced by the well-defined hexagonal crystalline of the Co(11¯00) layers. For Co(112¯0)/Cr(100) multilayers, on the other hand, an in-plane biaxial magnetic anisotropy is found due to the bicrystalline structure of the Co(112¯0) layers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361674
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 18
    Electronic Resource
    Electronic Resource
    Studies of anisotropic and giant magnetoresistance in Co/Cu(111) epitaxial multilayers : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6276-6278 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co/Cu(111) multilayers, [Co(17 A(ring))/Cu(8 A(ring)〈tCu〈14 A(ring))]30, have been prepared on Co(70 A(ring)) buffer layers on Al2O3(0001) substrates by molecular beam epitaxy. From the longitudinal and transverse magnetoresistance (MR) measurements, it is observed that MRs consist of two components with a small anisotropic MR (〈2%) component at low field sitting on top of the giant MR (up to 22%) component at higher field. The AMR effect strongly correlates with the abundance of hcp stacking of Co, which tends to decrease with the increasing of Cu spacer thickness. The AMR saturation fields (1–3 kOe) coincides with those of the magnetization. It is suggested that the observed AMR effect is due to scattering from the hcp-phase Co layers in the multilayers. This together with the large saturation field (30–40 kOe) obtained from the entire MR curves indicate that the observed GMR effect may result from the Co-Cu interfacial spin-dependent scattering. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362035
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 19
    Electronic Resource
    Electronic Resource
    Studies of hydrogen ion beam cleaning of silicon dioxide from silicon using in situ spectroscopic ellipsometry and x-ray photoelectron spectroscopy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 589-591 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The removal of a thin oxide layer from a silicon substrate without significant damage has been achieved at temperatures as low as 500 °C using a low-energy hydrogen ion beam produced by a high-intensity and low-energy ion source in a high-vacuum system. In situ spectroscopic ellipsometry was found to be a sufficiently sensitive and nondestructive method for simultaneously monitoring silicon surface cleaning and ion-induced substrate damage. This letter reports the optimum cleaning parameters for silicon (i.e., minimum ion-induced damage with maximum etch rate of SiO2) to be 300 eV ion beam energy, 60° beam incidence, and 500 °C substrate temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104596
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 20
    Electronic Resource
    Electronic Resource
    Characterization of a top-illuminated p-i-n diode with an indium tin oxide contact (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2076-2078 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The characteristics of a new type of AlGaAs/GaAs p-i-n photodiode are reported. Indium tin oxide forms the contact to the upper AlGaAs layer and serves also as an antireflection coating. Our devices show very low dark currents (20–300 pA at 5 V reverse bias for devices of 20–200 μm diameter), high speed (full width at half maximum 〈60 ps), and high sensitivity (61% external quantum efficiency) at 1 V bias. A microwave analysis of the diode is presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101170
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...