ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The removal of a thin oxide layer from a silicon substrate without significant damage has been achieved at temperatures as low as 500 °C using a low-energy hydrogen ion beam produced by a high-intensity and low-energy ion source in a high-vacuum system. In situ spectroscopic ellipsometry was found to be a sufficiently sensitive and nondestructive method for simultaneously monitoring silicon surface cleaning and ion-induced substrate damage. This letter reports the optimum cleaning parameters for silicon (i.e., minimum ion-induced damage with maximum etch rate of SiO2) to be 300 eV ion beam energy, 60° beam incidence, and 500 °C substrate temperature.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.104596
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