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  • American Physical Society  (303)
  • Springer Nature  (59)
  • American Institute of Physics (AIP)  (53)
  • 1
    Electronic Resource
    Electronic Resource
    Metal Schottky barrier contacts to alpha 6H-SiC (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4757-4760 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Formation of Schottky barrier contacts to n-type 6H-SiC for a number of metals chosen to include a variety of physical and chemical properties has been investigated. The metals (Pd, Au, Ag, Tb, Er, Mn, Al, and Mg) were deposited onto room temperature surfaces terminated with a submonolayer coverage of oxygen. The metal/6H-SiC interface chemistry and Schottky barrier height φB during contact formation were obtained with x-ray photoemission spectroscopy; the electrical properties of subsequently formed thick contacts were characterized by current-voltage and capacitance-voltage techniques. The øB values for these metals extend over a wide 1.3 eV range. To a varying degree φB depends on the 6H-SiC crystal face (Si vs C). Mg and Al (Si face of latter) have φB=0.3 eV, a value which is suitable for nonalloyed ohmic contacts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352086
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  • 2
    Electronic Resource
    Electronic Resource
    The role of geometric considerations in the diamond-cubic boron nitride heteroepitaxial system (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2679-2681 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the methods and results of a theoretical study of the diamond-cubic boron nitride [BNcub] heteroepitaxial system. We introduce a general, geometric reciprocal space technique for evaluating candidate epitaxial configurations, and a novel system of essentially geometric criteria to order them from most to least likely to occur. In the diamond- BNcub system, it is found that low index like planes require a relatively small strain of 1.37% from bulk parameters. The unlike epitaxial configuration which pairs diamond{100} with BNcub{221} and yields two-dimensional coincidence with the same strain is favored above other low index mixed configurations. The essentially geometric nature of this epitaxial system is highlighted.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348663
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  • 3
    Electronic Resource
    Electronic Resource
    Hot electron transport in AlN (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5865-5869 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The energy distribution of electrons that were transported through a thin intrinsic AlN film was directly measured as a function of the applied field. The measurements were realized by extracting the electrons into vacuum through a semitransparent Au contact and measuring their energies using an electron spectrometer. At moderate applied fields (100 kV/cm), the energy distribution was found to follow a Maxwellian model corresponding to a temperature of 2700 K and a drift component below the spectrometer resolution. At higher fields, intervalley scattering was evidenced by the presence of a second peak at 0.7 eV. This coincides well with the energy position of the LM valleys in AlN. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1318386
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  • 4
    Electronic Resource
    Electronic Resource
    A high-energy spherical grating monochromator for soft x rays at the Daresbury SRS (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 4349-4353 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A vertically dispersing high-energy spherical grating monochromator (HESGM) has been installed on the synchrotron radiation source (SRS) at the Daresbury Laboratory. The instrument has no entrance slit and provides a high intensity source of x rays of energy 250–1400 eV focused into a small spot suitable for surface spectroscopy. Photoabsorption features of 240 meV have been resolved, but the resolution of the instrument is dependent on the SRS stored beam current. The degree of linear polarization has been measured at the carbon K edge to be 0.80.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143735
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  • 5
    Electronic Resource
    Electronic Resource
    Structural and electronic properties of boron nitride thin films containing silicon (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5046-5051 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incorporation of silicon into boron nitride films (BN:Si) has been achieved during ion beam assisted deposition growth. A gradual change from cubic boron nitride (c-BN) to hexagonal boron nitride (h-BN) was observed with increasing silicon concentration. Ultraviolet photoelectron spectroscopy, field emission, and field emission electron energy distribution experiments indicated that the observed electron transport and emission were due to hopping conduction between localized states in a band at the Fermi level for the undoped c-BN films and at the band tails of the valence band maximum for the BN:Si films. A negative electron affinity was observed for undoped c-BN films; this phenomenon disappeared upon silicon doping due to the transformation to h-BN. No shift of the Fermi level was observed in any BN:Si film; thus, n-type doping can be excluded. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368752
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  • 6
    Electronic Resource
    Electronic Resource
    Determination of ionization energies of the nitrogen donors in 6H-SiC by admittance spectroscopy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1956-1958 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nitrogen donor levels have been studied by admittance spectroscopy between 20 and 200 K in Schottky barriers made on lightly n-type epitaxial 6H-SiC layers. Measurements at different frequencies yield different freezeout temperatures which in turn are used to determine the donor level energies. Two electron traps at Ec−0.082 eV and at Ec−0.140 eV were detected. These levels are associated with nitrogen, respectively, at the hexagonal sites for the former and at the cubic sites for the latter level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357655
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  • 7
    Electronic Resource
    Electronic Resource
    New rare-earth intermetallic phases R3(Fe,M)29Xn: (R=Ce, Pr, Nd, Sm, Gd; M=Ti, V, Cr, Mn; and X=H, N, C) (invited) : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6138-6143 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: New rare-earth (R), iron-rich ternary intermetallic compounds of the form R3(Fe,M)29 with the monoclinic Nd3(Fe,Ti)29 structure (space group P21/c, #14, Z=2) have recently been shown to form with R=Ce, Nd, Pr, Sm, and Gd, and M=Ti, V, Cr, and Mn. This novel structure is derived from the alternate stacking of Th2Zn17 and ThMn12-type segments and contains two R sites and fifteen Fe(M) sites. Reported Curie temperatures of the 3:29 compounds range from 296 K (R=Ce, M=Cr) to 524 K (R=Sm, M=V). The 3:29 compounds all show improved magnetic properties after interstitial modification with H or N; in particular, room-temperature coercivity has been reported in Sm3(Fe,Ti)29N5, making this compound a candidate for possible permanent-magnet applications. In this article we will review the work carried out to date on the 3:29 compounds.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358333
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  • 8
    Electronic Resource
    Electronic Resource
    Optical activation of Be implanted into GaN (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1622-1624 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single crystalline (0001) gallium nitride layers were implanted with beryllium. Photoluminescence (PL) measurements were subsequently performed as a function of implantation dose and annealing temperature. One new line in the PL spectra at 3.35 eV provided strong evidence for the presence of optically active Be acceptors and has been assigned to band–acceptor (eA) recombinations. The determined ionization energy of 150±10 meV confirmed that isolated Be has the most shallow acceptor level in GaN. Co-implantation of nitrogen did not enhance the activation of the Be acceptors. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122225
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  • 9
    Electronic Resource
    Electronic Resource
    Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2289-2291 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cold cathode structures have been fabricated using AlN and graded AlGaN structures (deposited on n-type 6H-SiC) as the thin film emitting layer. The cathodes consist of an aluminum grid layer separated from the nitride layer by a SiO2 layer and etched to form arrays of either 1, 3, or 5 μm holes through which the emitting nitride surface is exposed. After fabrication, a hydrogen plasma exposure was employed to activate the cathodes. Cathode devices with 5 μm holes displayed emission for up to 30 min before failing. Maximum emission currents ranged from 10–100 nA and required grid voltages ranging from 20–110 V. The grid currents were typically 1 to 104 times the collector currents. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120052
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  • 10
    Electronic Resource
    Electronic Resource
    Variation of GaN valence bands with biaxial stress and quantification of residual stress (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2001-2003 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature reflectance data on epitaxial GaN thin-film samples covering the widest range of tensile and compressive stress (−3.8–3.5 kbar) thus far explicitly show the nonlinear behavior of the B–A and C–A splittings versus the energy of the A exciton. Lineshape ambiguities that hindered previous interpretations have been resolved with reciprocal-space analysis, allowing us to obtain band parameters such as ΔSO=17.0±1meV with increased confidence. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119089
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