Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
76 (1994), S. 1956-1958
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The nitrogen donor levels have been studied by admittance spectroscopy between 20 and 200 K in Schottky barriers made on lightly n-type epitaxial 6H-SiC layers. Measurements at different frequencies yield different freezeout temperatures which in turn are used to determine the donor level energies. Two electron traps at Ec−0.082 eV and at Ec−0.140 eV were detected. These levels are associated with nitrogen, respectively, at the hexagonal sites for the former and at the cubic sites for the latter level.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.357655
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