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  • 66.3L  (1)
  • 73.20  (1)
  • Mutations  (1)
  • Springer  (3)
  • Nature Publishing Group
  • Oxford University Press
  • 1985-1989  (3)
Collection
Keywords
Publisher
  • Springer  (3)
  • Nature Publishing Group
  • Oxford University Press
Years
  • 1985-1989  (3)
Year
  • 1
    Electronic Resource
    Electronic Resource
    Surface and volume decay processes in semiconductors studied by contactless transient photoconductivity measurements (1988)
    Springer
    Applied physics 46 (1988), S. 77-85 
    Details
    ISSN: 1432-0630
    Keywords: 72.40 ; 73.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Excess charge carrier kinetics in moderately doped pSi wafers were investigated with a contactless transient photoconductivity method, i.e. the time-resolved microwave conductivity (TRMC) method. The surface structure of the wafers was changed by etching and polishing, the volume structure by irradiation with high-energy electrons. Comparison of the photoconductivity decay after excitation by strongly absorbed light and by weakly absorbed light was used to distinguish between surface and volume decay processes. The experimental results deviate from predictions based on a linear surface decay rate. These results are discussed and suggestions are made for the use of transient photoconductivity measurements to characterize semiconductor wafers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615912
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  • 2
    Electronic Resource
    Electronic Resource
    On the generation and annealing of dangling bond defects in hydrogenated amorphous silicon (1988)
    Springer
    Applied physics 45 (1988), S. 41-51 
    Details
    ISSN: 1432-0630
    Keywords: 66.3L ; 68.60 ; 72.80N
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We show that, through the diffusive re-arrangement of Si-H bonds, the a-Si∶H lattice is able to establish thermal equilibrium between the densities of band tail trapped charge carriers and dangling bond defects. When this equilibrium is disturbed by changes in temperature, carrier injection or illumination, dangling bond defects have to be generated or annealed out via H-diffusion processes. Based on the concept of charge-induced bond breaking, we develop a mathematical formalism for the diffusive re-arrangement of Si-H bonds and show that our formalism can account for a variety of observations that have been made in the context of defect-generation and annealing experiments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618762
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  • 3
    Electronic Resource
    Electronic Resource
    Insertion mutation inactivates the expression of the recessive oncogene lethal(2)giant larvae of Drosophila melanogaster (1986)
    Springer
    Molecular genetics and genomics 204 (1986), S. 58-63 
    Details
    ISSN: 1617-4623
    Keywords: Drosophila recessive oncogene ; Mutations ; Molecular cloning ; Mobile elements ; Transcription
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Summary The Drosophila recessive oncogene lethal(2)giant larvae is located at the extreme left end of the second chromosome close to telomeric repetitive sequences. Of the 20 l(2)gl mutant alleles isolated from wild flies in widespread populations of the Soviet Union and California, all but two appear to represent large deletions which have removed the telomeric repetitive sequences and l(2)gl single copy sequences (Mechler et al. 1985). We have analyzed the structure of the two exceptions: the l(2)glGB52 mutation results from the insertion of a single transposable element of the B104 or roo family, whereas the more complex rearrangements of the l(2)glDV275 mutation consists of an 8 kb interstitial deletion whose breakpoints have become associated with a large transposed DNA fragment. Characterization of this fragment shows that it consists of B104 sequences flanked on one side by sequences originating from the chromosomal region 24D. Furthermore, we show that in both mutants normal transcription of the l(2)gl gene is abolished.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00330187
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