Abstract
Excess charge carrier kinetics in moderately doped pSi wafers were investigated with a contactless transient photoconductivity method, i.e. the time-resolved microwave conductivity (TRMC) method. The surface structure of the wafers was changed by etching and polishing, the volume structure by irradiation with high-energy electrons. Comparison of the photoconductivity decay after excitation by strongly absorbed light and by weakly absorbed light was used to distinguish between surface and volume decay processes. The experimental results deviate from predictions based on a linear surface decay rate. These results are discussed and suggestions are made for the use of transient photoconductivity measurements to characterize semiconductor wafers.
Similar content being viewed by others
References
W. Shockley:Electrons and Holes in Semiconductors (Van Nostrand, New York 1950)
J.P. McKelvey, R.L. Longini: J. Appl. Phys.25, 634 (1954)
M. Kunst, G. Beck: J. Appl. Phys.60, 3558 (1986)
A. Many, Y. Goldstein, N.B. Grover:Semiconductor Surfaces (North-Holland, Amsterdam 1965)
D.R. Frankl:Electrical Properties of Semiconductor Surfaces (Pergamon, Oxford 1962)
K. Bitterling, F. Willig: J. Electronal. Chem.204, 211 (1986)
S. Gottesfeld: Ber. Bunsenges. Phys. Chem.91, 362 (1987)
M. Kunst, W. Jaegermann, D. Schmeisser: Appl. Phys. A42, 5 (1987)
J. Vaitkus: Phys. Stat. Solidi A34, 769 (1976)
M.S. Tyagi, J.F. Nys, R.J. Van Overstraeten: Solid State Electron.25, 411 (1982)
M. Kunst, G. Beck: J. Appl. Phys.63, 1093 (1988)
Landolt-Börnstein, New Series III, Vol.22 (Springer, Berlin, Heidelberg 1987)
S. Eränen, M. Blomberg: J. Appl. Phys.56, 2372 (1984)
B. Bastegar, J.F. Wager: Semicond. Sci. Technol.1, 207 (1986)
K.L. Luke, L.J. Chen: J. Appl. Phys.61, 2282 (1987)
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Kunst, M., Müller, G., Schmidt, R. et al. Surface and volume decay processes in semiconductors studied by contactless transient photoconductivity measurements. Appl. Phys. A 46, 77–85 (1988). https://doi.org/10.1007/BF00615912
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/BF00615912