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  • 1
    Monograph available for loan
    Monograph available for loan
    Jahrbuch 2001 (2004)
    Freising
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    Call number: PIK W 510-05-0035
    In: Bayerische Waldklimastationen Jahrbuch
    Type of Medium: Monograph available for loan
    Pages: 131 S. + CD
    ISSN: 1436-3275
    Series Statement: Bayerische Waldklimastationen Jahrbuch
    Branch Library: PIK Library
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  • 2
    Electronic Resource
    Electronic Resource
    Die Wirkung des Antivitamins Pyrithiamin auf den Stoffwechsel der thiaminautotrophen Serratia marcescens (1975)
    Springer
    Archives of microbiology 103 (1975), S. 83-88 
    Details
    ISSN: 1432-072X
    Keywords: Pyrithiamine ; Quantitative Analysis ; Metabolism ; Serratia marcescens
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Description / Table of Contents: Zusammenfassung Es wird ein neues Verfahren zur quantitativen Bestimmung des Antivitamins Pyrithiamin in biologischem Material als mikrobiologischer Test mit einer Pyrithiamin-stimulierten Mutante von Lactobacillus fermenti (ATCC 9338) beschrieben. Mit dieser spezifischen Methode erfolgt der Nachweis, daß Serratia marcescens das Antivitamin aufnimmt und wahrscheinlich zum Pyrithiamin-monophosphat phosphoryliert. Durch das aufgenommene Analogon werden bei Serratia marcescens Generationszeit, Biomasse der Kultur, Gesamtkohlenhydrate und-proteine nicht verändert. Dagegen fördert Pyrithiamin die exponentielle Absterberate k und den Umsatz der C-Quelle Glycerin, korrelierend mit der Erhöhung des Gesamtpyruvats und der Biosynthese von Acetoin. Der Gehalt an Neutralfetten wird reduziert.
    Notes: Abstract A new method is described for the quantitative microbiological analysis of the thiamine analog pyrithiamine present in biological material. The method uses a mutant of Lactobacillus fermenti (ATCC 9338) stimulated by pyrithiamine. By this specific method it is found that Serratia marcescens is able to consume and to phosphorylate the antivitamine (presumably to pyrithiamine monophosphate). The uptake of the analog influences neither the generation time of Serratia marcescens nor the biomass of the culture, nor the total amounts of carbohydrate and protein within the cells. On the contrary, pyrithiamin stimulates the exponential death-rate k and decreases the quantity of neutral fats. The carbon source glycerol is consumed at a higher rate, which is paralleled by an increased total amount of pyruvate as well as by an increased biosynthesis of acetoin.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00436334
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  • 3
    Electronic Resource
    Electronic Resource
    The action of proteolytic enzymes on chloroplast thylakoid membranes
    Amsterdam : Elsevier
    Biochimica et Biophysica Acta (BBA)/Biomembranes 448 (1976), S. 103-113 
    Details
    ISSN: 0005-2736
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Medicine , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0005-2736(76)90079-1
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  • 4
    Electronic Resource
    Electronic Resource
    A new method of electropolishing niobium
    Amsterdam : Elsevier
    Physics Letters A 37 (1971), S. 139-140 
    Details
    ISSN: 0375-9601
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0375-9601(71)90095-8
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  • 5
    Electronic Resource
    Electronic Resource
    Photoluminescence and band edge alignment of C-induced Ge islands and related SiGeC structures (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2790-2792 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth of less than 2 monolayers Ge on a submonolayer amount of predeposited C on Si results in the formation of very small Ge quantum islands. In a photoluminescence study, we compare these C-induced Ge (CGe) dots with carefully chosen reference structures incorporating the same total amount of C and Ge but with different deposition orders and with varied C distribution below the Ge islands. Our investigations imply that the special combination of pregrown low surface mobility C and post-grown high surface mobility Ge constitutes a distinct microstructure within the SiGeC material system, causing dot formation at a very early stage and showing particularly intense photoluminescence signal. Moreover, structures combining CGe dots with Si1−yCy quantum wells are well explained by the model of spatially indirect type-II recombination within the CGe islands. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122592
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  • 6
    Electronic Resource
    Electronic Resource
    Annealing effects on carbon-induced germanium dots in silicon (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3344-3346 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of 2.4 monolayers Ge on 0.2 monolayers of predeposited C on Si results in the formation of 15 nm size Ge islands. Fifty stacked layers of these C-induced Ge dots are grown on Si (001) at 460 °C. Different pieces of the wafer are annealed at temperatures between 460 and 950 °C and for times ranging from 1 to 20 min at 850 °C. For temperatures higher than 550 °C, a pronounced energy blueshift and an evolution from one broad photoluminescence peak to two well-resolved lines reflect a gradual transition from quantum dot states to quantum well-like states. As transmission electron microscopy images illustrate, diffusion processes completely smear out the sharp interfaces between the dots and the surrounding Si. An activation energy of only 1.6 eV and temperature-dependent diffusion coefficients are derived from simple model calculations. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121598
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  • 7
    Electronic Resource
    Electronic Resource
    Microspectroscopy and imaging using a delay line detector in time-of-flight photoemission microscopy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 3968-3974 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A method for microspectroscopy and energy-selective imaging using a special photoemission electron microscope (PEEM) is presented. A modified commercial PEEM was combined with a delay line device as x, y, t detector serving as the basic arrangement for spectromicroscopy. One can measure the time of flight of the electrons passing a drift section in order to analyze the energy distribution of photoelectrons in PEEM. The time of flight is referenced to the time structure of the synchrotron radiation from an electron storage ring. At electron kinetic energies of less than 20 eV within the drift region a spatial resolution of about 100 nm has been obtained. Fast counting electronics (instead of a camera) delivers an image for real-time monitoring on an oscilloscope screen or for image acquisition by a computer. A time resolution of about 500 ps has been obtained with the potential of further improvement. The spatial resolution of the delay line detector is about 50 μm in the image plane corresponding to 1000 pixels in the image diagonal. Direct photoemission from the W-4f core level of a W(110) single-crystal sample was observed at several photon energies. The W-4f fine-structure splitting of 2.3 eV could be well resolved at a pass energy around 40 eV through the drift region. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1405781
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  • 8
    Electronic Resource
    Electronic Resource
    Photoluminescence of ultrasmall Ge quantum dots grown by molecular-beam epitaxy at low temperatures (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1279-1281 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature epitaxial growth of Si–Ge heterostructures opens possibilities for synthesizing very small and abrupt low-dimensional structures due to the low adatom surface mobilities. We present photoluminescence from Ge quantum structures grown by molecular-beam epitaxy at low temperatures which reveals a transition from two-dimensional to three-dimensional growth. Phononless radiative recombination is observed from 〈105〉 faceted Ge quantum dots with height of approximately 0.9 nm and lateral width of 9 nm. Postgrowth annealing reveals a systematic blueshift of the Ge quantum dot's luminescence and a reduction in nonradiative recombination channels. With increasing annealing temperatures Si–Ge intermixing smears out the three-dimensional carrier localization around the dot. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1430508
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  • 9
    Electronic Resource
    Electronic Resource
    Photoluminescence investigation of phononless radiative recombination and thermal-stability of germanium hut clusters on silicon(001) (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2261-2263 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intense photoluminescence (PL) originating from single layers of germanium hut clusters grown on silicon (001) is investigated using PL spectroscopy. We propose that the luminescence originates from phononless recombination within a spatially indirect, type-II neighboring confinement structure. Enhanced no-phonon (NP) luminescence is attributed to exciton localization at the Ge/Si interfaces. The PL intensity is sensitive to the growth temperature during interface formation, as well as to post-growth thermal annealing, illustrating the influence of atomic-level Si–Ge intermixing on exciton localization and NP enhancement. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1405148
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  • 10
    Electronic Resource
    Electronic Resource
    Resonant tunneling diodes made up of stacked self-assembled Ge/Si islands (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 4341-4343 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multiple layers of self-assembled Ge/Si islands are used for resonant tunneling diodes (RTDs). The extremely closely stacked Ge nanostructures form vertical channels with energetically deep thermalization layers and high Si double barriers. Two resonances are found in the RTD current–voltage curve, which are attributed to the heavy-heavy hole (hh) and heavy-light hole (lh) transition. The lh resonance shows negative differential resistance up to 50 K. With increasing magnetic field, the lh resonance slightly shifts to higher voltages. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1332817
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