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  • American Institute of Physics (AIP)  (39)
  • American Geophysical Union  (14)
  • 1985-1989  (53)
  • 1
    Electronic Resource
    Electronic Resource
    Theoretical studies on the femtosecond real-time measurement of ultrafast electronic decay in polyatomic molecules (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 7184-7194 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We present a computer simulation of the real-time detection of ultrafast electronic decay dynamics in polyatomic molecules with femtosecond laser pulses. The intramolecular non-Born-Oppenheimer quantum dynamics is treated numerically exactly for a two-state three-mode vibronic coupling model representing the conically intersecting S1 and S2 excited states of pyrazine. The pump–probe signal is evaluated in lowest order perturbation theory with respect to the radiation–matter interaction by numerical integration over the pump and probe pulses. We discuss in some detail the dependence of the pump–probe signal on the properties of the laser pulses (frequencies and pulse durations). The calculations predict a dramatic (∼12 000 cm−1) and ultrafast (∼20 fs) red shift of the stimulated-emission signal as well as distinctive quantum beats in the pump–probe signal as a function of the delay time. Both effects are very pronounced and should therefore be relatively easily detectable experimentally. They are expected to be generic features of ultrafast internal-conversion processes in polyatomic molecules.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456248
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  • 2
    Electronic Resource
    Electronic Resource
    Fractional diffusion and wave equations (1989)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 30 (1989), S. 134-144 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: Diffusion and wave equations together with appropriate initial condition(s) are rewritten as integrodifferential equations with time derivatives replaced by convolution with tα−1/Γ(α), α=1,2, respectively. Fractional diffusion and wave equations are obtained by letting α vary in (0,1) and (1,2), respectively. The corresponding Green's functions are obtained in closed form for arbitrary space dimensions in terms of Fox functions and their properties are exhibited. In particular, it is shown that the Green's function of fractional diffusion is a probability density.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.528578
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  • 3
    Electronic Resource
    Electronic Resource
    Surface chemistry of CuxS and CuxS/CdS determined from x-ray photoelectron spectroscopy (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5056-5065 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoelectron spectroscopy spectra measured on copper sulfide (CuxS) films showed that a thin surface reaction product containing Cu in the +2 valence state was formed on CuxS films exposed to air for 46 h at 40 °C and 90% relative humidity. An entirely different CuxS surface reaction product layer was formed in dry air at 170 °C for 30 min and it contained sulfur in the +6 valence state. The copper (Cu) valence state in CuxS was not found to be +2 even when the x value was less than 1.9. When the argon sputter-cleaned surface of CuxS or CuxS/CdS films was exposed to room-temperature air for 10 min, cadmium (Cd) atoms appeared on the CuxS surface. X-ray powder diffraction patterns showed that CuO and CdS reacted at 500 °C in flowing nitrogen to form Cu2S and CdO. This cation exchange between CdS and copper oxide may explain the surface Cd on the CuxS films. The standard free energy of reaction between CuO and CdS is positive while that between Cu2O and CdS is negative. These results indicate a method for stabilizing CuxS/CdS solar cells against degradation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335283
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  • 4
    Electronic Resource
    Electronic Resource
    Resolution of the Thomson spectrometer (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1-5 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The resolution of Thomson spectrometers is examined. Charge, mass energy, and momentum resolutions are found as functions of collimation parameters and field strengths. The results are generally applicable to all Thomson spectrometer systems. In conjunction with this analysis, a compact Thomson spectrometer with high resolving power is described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335389
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  • 5
    Electronic Resource
    Electronic Resource
    Monolayer abruptness in highly strained InAsxP1−x/InP quantum well interfaces (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1142-1144 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAsxP1−x/InP strained quantum well structures have been prepared by atmospheric-pressure organometallic vapor phase epitaxy (OMVPE). Structures with compositions of x=0.40–0.67 and quantum well thicknesses of 0.8–16 nm were evaluated using photoluminescence spectroscopy. Strain in the pseudomorphic wells ranged from 1.3 to 2.1%. Doublets and multiplets are observed in the photoluminescence spectra and are attributed to luminescence from regions in the wells differing in thickness by a single monolayer, with atomically smooth interfaces over areas greater in lateral extent than the exciton diameter. Typical full widths at half maximum of the photoluminescence from the thinnest wells are 8–14 meV, comparable to the best reported values for thin lattice-matched quantum wells prepared from the InGaAs(P)/InP system using OMVPE.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100742
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  • 6
    Electronic Resource
    Electronic Resource
    Reaction of Ba2YCu3O6.9 films with yttria-stabilized zirconia substrates (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 710-712 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Degradation of Ba2YCu3O6.9 films on yttria-stabilized zirconia substrates is shown to proceed by barium depletion from the film and barium zirconate formation. This process is accompanied by a decrease in the temperature of zero resistivity and ultimately produces Y2Cu2O5 and CuO. BaZrO3 is, however, found to be inert to Ba2YCu3O6.9 at 950 °C. Use of a truly chemically inert substrate material may permit extended heat treatment of films without degradation due to substrate interactions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100557
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  • 7
    Electronic Resource
    Electronic Resource
    XeF laser pumped by high-power sliding discharges (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2365-2367 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a high-power XeF laser photolytically pumped by two surface discharges. The discharges slide along 760-mm-long by 12-mm-wide ferrite rods. They were energized by a single 6 μF capacitor at 50 kV in a fast discharge circuit. Each emitted up to 38 kW nm−1 cm−2 at 140 nm in 3-μs-long pulses. This powerful radiation source was used to photolyze mixtures of 450 Torr argon, 50 Torr nitrogen, and up to 12 Torr XeF2 in an active volume of about 1 l. We extracted a maximum specific laser output energy density of 8 J/l at 351 nm from the B–X transition of XeF.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100231
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  • 8
    Electronic Resource
    Electronic Resource
    Reassessment of the rate constant for electron collision quenching of KrF(B) (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2482-2484 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The rate constant for electron collision quenching of KrF(B) has been reassessed by analyzing previous theoretical [A. Hazi, T. Rescigno, and A. Orel, Appl. Phys. Lett. 35, 477 (1979)] and experimental [D. Trainor and J. Jacob, Appl. Phys. Lett. 37, 675 (1980)] data. From this analysis we recommend that the rate constant for electron collision quenching of KrF(B), used for modeling electron beam and discharge excited lasers, should be 3–6×10−8 cm3 s−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102005
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  • 9
    Electronic Resource
    Electronic Resource
    Electrical and optical time-of-flight experiments in GaAs/AlAs superlattices (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2656-2658 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamics of electron transport by sequential resonant and nonresonant tunneling along the growth direction of tight-binding GaAs/AlAs superlattices is studied by electrical time-of-flight experiments and by time-resolved photoluminescence. In the limit where the decay time of the photoluminescence is determined by transport (and not by recombination), we observe structures in the field dependences of both the optical and electrical response times which are related to resonances between different electronic subbands of adjacent wells. Here the time-resolved photoluminescence and the electrical time-of-flight experiment provide independent tools to investigate the dynamics of the conduction processes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101026
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  • 10
    Electronic Resource
    Electronic Resource
    Optical detection of high-field domains in GaAs/AlAs superlattices (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1757-1759 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the formation of high-field domains in undoped GaAs/AlAs superlattices under strong illumination. The photocurrent-voltage characteristics showed an oscillatory-like behavior which is attributed to the existence of high-field domains. We used photoluminescence (PL) spectroscopy to identify the existing domains as a function of electric field perpendicular to the layers. A total of five PL lines was observed and assigned to different domains through their Stark shift.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101282
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