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  • 1
    Electronic Resource
    Electronic Resource
    Electrical and optical time-of-flight experiments in GaAs/AlAs superlattices (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2656-2658 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamics of electron transport by sequential resonant and nonresonant tunneling along the growth direction of tight-binding GaAs/AlAs superlattices is studied by electrical time-of-flight experiments and by time-resolved photoluminescence. In the limit where the decay time of the photoluminescence is determined by transport (and not by recombination), we observe structures in the field dependences of both the optical and electrical response times which are related to resonances between different electronic subbands of adjacent wells. Here the time-resolved photoluminescence and the electrical time-of-flight experiment provide independent tools to investigate the dynamics of the conduction processes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101026
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  • 2
    Electronic Resource
    Electronic Resource
    Optical detection of high-field domains in GaAs/AlAs superlattices (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1757-1759 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the formation of high-field domains in undoped GaAs/AlAs superlattices under strong illumination. The photocurrent-voltage characteristics showed an oscillatory-like behavior which is attributed to the existence of high-field domains. We used photoluminescence (PL) spectroscopy to identify the existing domains as a function of electric field perpendicular to the layers. A total of five PL lines was observed and assigned to different domains through their Stark shift.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101282
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  • 3
    Electronic Resource
    Electronic Resource
    Gold cluster formation at the interface of a gold/Langmuir-Blodgett film/gold microsandwich resulting in Coulomb charging phenomena (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3374-3376 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural analysis of the cross section of gold/Langmuir-Blodgett (LB) polymer film/gold sandwich structures was performed using transmission electron microscopy (TEM), and the obtained results were complemented by electron transport investigations of the sandwich structures. The polymer film consisted of four to ten LB monolayers of a nonconducting polymer. TEM analysis of the sandwich cross section revealed a number of gold particles, 2–5 nm in size, formed during the fabrication process within the LB film close to the top electrode. Low temperature dc-transport measurements showed current-voltage (I-V) characteristics with equidistant steps that are not expected if the polymer film is thought to form a single laterally extended tunneling barrier between the metal electrodes. This feature can be understood, however, on the basis of the Coulomb blockade model applied to cluster-like metallic inclusions acting as an island separated from both Au electrodes by tunneling barriers. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369691
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  • 4
    Electronic Resource
    Electronic Resource
    Electron and hole transport in a-Si1−xGex:H alloys (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2016-2023 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous Si1−xGex:H films and p-i-n diodes were fabricated by decomposition of SiH4/GeH4 mixtures in a triode glow-discharge reactor. The photoconductivity under AM1 illumination in these alloys was constant over a range of band gaps between 1.8 (x=0) and 1.5 eV (x=0.25), while the solar cell conversion efficiency decreased at the same time from 8.6% to 4.3%. This can be explained by a reduction in the μτ product for holes with rising x in undoped samples as revealed by time-of-flight experiments. In contrast to μτ, the hole drift mobility μD,h remains constant. The opposite behavior is observed for electrons, whose drift mobility μD,e decreases as the mobility activation energy EA increases. The relation between EA and μD,e for variable x is suggestive of the Meyer–Neldel rule for the conductivity. In conjunction with space-charge-limited current and sub-band-gap absorption data we conclude that only the conduction-band tail is widened by the incorporation of Ge while the valence-band tail remains unaffected. The transport data for x〉0 can no longer be explained by a purely exponential conduction-band tail. The rising density of midgap states shows an increasing capture cross section for holes and a decreasing one for electrons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337203
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  • 5
    Electronic Resource
    Electronic Resource
    Closely spaced and separately contacted two-dimensional electron and hole gases by in situ focused-ion implantation (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2105-2107 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Separately contacted layers of a two-dimensional (2D) electron gas and a 2D hole gas have been prepared in GaAs, which are separated by AlGaAs barriers down to 15 nm thickness. The molecular-beam-epitaxial growth was interrupted just before growth of the double-layer structure in order to use in situ focused-ion-beam implantation to pattern contacts which extend underneath the barrier. The two charge gases form upon biasing the p- and n-type contacts underneath and above the barrier in the forward direction and show independent transistor-like behavior. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1463698
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  • 6
    Electronic Resource
    Electronic Resource
    Microstructured gold/Langmuir–Blodgett film/gold tunneling junctions (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3331-3333 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We prepared symmetric sandwich structures of the sequence gold/Langmuir–Blodgett film/gold by employing a novel evaporation technique. As molecular systems, we used an octasubstituted palladiumphthalocyanine and a perylene-3,4,9,10-tetracarboxyldiimide derivative. Electronic transport measurements show a tunneling characteristic which arises from a direct tunneling process through molecular states. The current/voltage curves are symmetric for positive and negative bias proving the identical electronic behavior of the two organic/inorganic interfaces at the top and bottom electrode. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113747
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  • 7
    Electronic Resource
    Electronic Resource
    Photocurrent spectroscopy in a sawtooth doping superlattice (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1967-1969 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an investigation of photocurrent response in a sawtooth doping superlattice which is composed of alternating n(Si) and p(Be) δ-doping layers with undoped GaAs layers (7–15 nm) between them. A selective contact method is used to measure the interesting behavior of the subband gap compared with the gap of the host semiconductor. The photocurrent is finite even when the photon energy is below the gap of GaAs and can be varied by applying a bias voltage between the n and p contacts. The observed phenomena can be explained by a generalized Franz–Keldysh model which takes into account the finite voltage drop inside the sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99592
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  • 8
    Electronic Resource
    Electronic Resource
    Quantum-confined subband transitions of a GaAs sawtooth doping superlattice (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1133-1135 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we present for the first time the observation of quantum-confined transitions of a short-period sawtooth doping superlattice in photocurrent and luminescence. The luminescence was investigated with different laser intensities. Due to the nature of the band modulation of sawtooth doping superlattices, the resonant energies for optical transitions are dependent on the intensity of the laser beam. We present a model, which incorporates both the Kronig–Penney energy dispersion and the self-consistent intensity-dependent internal field to explain the observed energy shift. Furthermore, the differences between photocurrent and luminescence measurements are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100739
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  • 9
    Electronic Resource
    Electronic Resource
    Realization of an in-plane-gate single-electron transistor (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3174-3176 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By etching narrow trenches in an AlGaAs/GaAs heterostructure and defining a channel and six in-plane gates in the two-dimensional electron gas, a single-electron transistor is produced in a simple way. As expected from charging effects, the conductivity of the transistor oscillates with the voltage on each gate. However, in contrast to metallic devices or heterostructure devices with metallic top gates, the voltage dependent depletion of the gates themselves leads to changes in the period of the oscillations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109120
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  • 10
    Electronic Resource
    Electronic Resource
    One-dimensional lateral-field-effect transistor with trench gate-channel insulation (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2695-2697 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel unipolar transistor device has been realized starting from two-dimensional electron systems (2DES) in modulation-doped AlGaAs/GaAs heterostructures. A 600-nm-wide 1D channel is insulated laterally from 2DES regimes by 700-nm-wide deep mesa etched trenches. The conductivity in the quasi-one-dimensional channel can be tuned via the in-plane lateral field effect of the adjacent 2DES gates where the vacuum (or air) in the etched trenches serves as the dielectric. Room-temperature operation is demonstrated yielding a 17 μS transconductance corresponding to 170 mS/mm 2D transconductance.〈hedend〉
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103803
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