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  • American Institute of Physics (AIP)  (5)
  • Cambridge University Press  (1)
  • American Chemical Society
  • 1985-1989  (6)
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  • 1
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    Transient flow in a side-heated cavity at high Rayleigh number: a numerical study (1989)
    Cambridge University Press
    Details
    Publication Date: 1989-03-01
    Description: A series of two- and three-dimensional numerical simulations of transient flow in a side-heated cavity has been conducted. The motivation for the work has been to resolve discrepancies between a flow description based on scaling arguments and one based on laboratory experiments, and to provide a more detailed description of the approach to steady state. All simulations were for a Rayleigh number of 2 x 109, and a water-filled cavity of aspect ratio 1. The simulations (beginning with an isothermal fluid at rest) generally agree with the results of the scaling arguments. In addition, the experimental observations are entirely accounted for by the position of the measurement instruments and the presence of an extremely weak, stabilizing temperature gradient in the vertical. © 1989, Cambridge University Press. All rights reserved.
    Print ISSN: 0022-1120
    Electronic ISSN: 1469-7645
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Published by Cambridge University Press
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  • 2
    Electronic Resource
    Electronic Resource
    Interfacial defect creation by interstitial lithium doping of amorphous hydrogenated silicon (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 505-507 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study interstitial doping in amorphous hydrogenated silicon (a-Si:H) by indiffusion of lithium at 230 °C using secondary ion mass spectrometry, photothermal deflection spectroscopy (PDS), and electron spin resonance. Lithium is distributed nonuniformly in the films with peak concentrations within 300 nm of either interface. Lithium doping introduces up to 1018 paramagnetic defects per cc in a-Si:H (g=2.0061, ΔHp.p. =5.2 G), equal to the concentration of deep defects created as measured by PDS. The nature of these defects is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99881
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  • 3
    Electronic Resource
    Electronic Resource
    Hydrogen incorporation in silicon thin films deposited with a remote hydrogen plasma (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1872-1874 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results are presented on the effects of growth conditions on hydrogen incorporation in Si thin films deposited with a remote hydrogen plasma. Oxygen contamination of the films was significantly reduced by replacement of the quartz tube that is commonly used to contain the hydrogen plasma with an alumina tube, with a concomitant increase in the electrical conductivity of P-doped a-Si:H films. Hydrogen incorporation was examined with a remote deuterium plasma and downstream injection of SiH4. As the gas flow ratio D2:SiH4 increases, the ratio D:H in the film changes as a consequence of the increasing flux of D at the growing surface. High silane dilution also promotes the formation of microcrystalline silicon, which itself affects H incorporation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101264
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  • 4
    Electronic Resource
    Electronic Resource
    Realistic modeling of the electronic properties of doped amorphous silicon (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1083-1085 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we describe a fundamental approach to calculating the electronic properties of doped amorphous silicon which takes into account the thermal history of the material. Above the equilibrium temperature, the material is in a thermodynamically stable state, and this is derived by minimizing the free energy using a simple density of states model. The calculations are based on the defect compensation model of doping, introducing distributions of formation energies for neutral dangling bonds and fourfold dopant atoms while preserving charge neutrality. Our results are in good agreement with experimental data providing a realistic model for use in device simulation programs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100028
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  • 5
    Electronic Resource
    Electronic Resource
    Interstitial Li doping of a-Si:H (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2272-2281 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the process of interstitial doping of hydrogenated amorphous silicon (a-Si:H) by Li in-diffusion and thermal annealing after Li+ implantation using secondary ion mass spectrometry, dc dark conductivity [σ(T)], electron-spin resonance, and photothermal deflection spectroscopy measurements. All Li-doped a-Si:H samples were characterized by an inhomogeneous distribution of Li atoms. Doping by Li in-diffusion at 230 °C resulted in a Li-rich (up to 1021 cm−3) region at both sample interfaces, a large increase in σ(300 K), and the creation of deep paramagnetic (g=2.0061±0.0002, ΔHp.p.=5.4±0.4 G) defects with defect densities (up to 2×1018 cm−3) proportional to the interfacial Li concentration. Li+ implantation of a-Si:H at 373 K resulted in the creation of deep paramagnetic (g=2.0056±0.001, ΔHp.p.=6.0±0.5 G) defects with defect densities (up to 2×1018 cm−3) proportional to the implanted Li+ dose. Isochronal vacuum annealing of Li+-implanted a-Si:H up to 545 K resulted in an exponential increase of σ(300 K) and an activated (Ea=+0.32 eV) decrease of the spin density with increasing anneal temperatures. Both Li in-diffused and annealed Li+-implanted a-Si:H films displayed thermal equilibration behavior similar to that characteristic of P-doped a-Si:H, which suggests that the defect compensation model of substitutional doping of a-Si:H is also applicable to the case of interstitial doping. However, the defect structure of a-Si:H doped by Li in-diffusion is significantly different than that of both undoped and P-doped a-Si:H due to the precipitation of Li at the interfaces of heavily Li-doped a-Si:H. We discuss the origin of this behavior.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342841
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  • 6
    Electronic Resource
    Electronic Resource
    Structural, optical, and spin properties of hydrogenated amorphous silicon-germanium alloys (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 569-592 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a detailed study of structural and electronic properties of hydrogenated amorphous silicon-germanium alloys deposited by rf glow discharge from SiH4 and GeH4 in a diode reactor. The chemical composition of the alloys is related to the deposition conditions, with special emphasis on preferential incorporation of Ge into the solid phase and on the role of inert dilutant gases. Hydrogen bonding in the alloys is investigated with nuclear magnetic resonance and vibrational (Raman and infrared) spectroscopy. The optical properties of a-SiGe:H samples deposited under optimal conditions are analyzed with the help of subgap absorption measurements and band-tail luminescence for the entire range of alloy composi-tions. A large part of the article describes an investigation of the electron-spin-resonance response of undoped alloys. The spin density associated with dangling bond defects localized on Si and Ge atoms has been measured as a function of alloy composition for optimized material. In addition, the dependence of the two defect densities on the detailed deposition conditions (rf power, substrate temperature, and dilution) has been determined in a systematic way for alloys deposited from a plasma with a fixed SiH4/GeH4ratio. The results of this study, especially the preferential creation of Ge dangling bonds, are discussed in the context of our structural data. Furthermore, spin resonance is employed to investigate the light-induced degradation (Staebler–Wronski effect) of a-SiGe:H. Finally, the changes of the spin-resonance spectra of a-Si0.7 Ge0.3 :H upon substitutional doping with phosphorus and boron have been obtained experimentally, and are used to construct a model for the electronic density of states in this material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343574
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