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  • Springer  (44)
  • Wiley  (40)
  • American Institute of Physics (AIP)  (17)
  • Periodicals Archive Online (PAO)  (9)
  • American Association for the Advancement of Science (AAAS)  (3)
  • 1985-1989  (113)
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Molecular dynamics by numerical simulation in zeolites: Methane in NaA (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 7482-7491 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A molecular dynamical study of one methane molecule in a cavity of NaA zeolite is performed in order to compare calculated to experimental data obtained by infrared spectroscopy and neutron scattering experiments in the temperature range 300–30 K. The calculation shows the trajectory of the molecule in the cavity and then the occupied volume as a function of energy. It allows the calculation of average quantities and correlation functions: (i) the mean field felt by the molecule comparable to the field responsible for the induced infrared band ν1, (ii) the average of the potential energy (to be compared to the heat of adsorption) and of the velocity squared, (iii) the external frequency distribution, and (iv) the position autocorrelation function which is related to the dynamical structure factor seen by neutron scattering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456182
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  • 2
    Electronic Resource
    Electronic Resource
    Diffusivity of the hydrogen molecule sorbed in NaA zeolite by a neutron scattering experiment (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 5097-5102 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The diffusion of hydrogen in NaA zeolite was studied by incoherent neutron scattering. An experiment was carried out on samples loaded with 1.2 to 3.4 molecules per cavity and at several temperatures from 70 to 150 K. The angular (θ) dependence of the elastic and quasielastic intensities shows that the H2 molecule has a translational motion in a nonrestricted volume. A diffusion model where the molecule undergoes isotropic jumps of mean length l¯=3.9 A(ring) independent of temperature and is at rest for a time τ0 between two jumps accounts for the width of the quasielastic scattering in the entire (θ,T) range (τ0=10.8 ps at T=100 K). This leads to a diffusion coefficient D(cm2/s)=6×10−4 exp(E/RT) with E=2 kJ/mol for the less loaded samples. The diffusion coefficient increases slightly with the loading.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.457601
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  • 3
    Electronic Resource
    Electronic Resource
    Hg1−xCdxTe/Hg1−xZnxTe superlattices with constant Hg content (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1466-1468 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hg1−xCdxTe/Hg1−xZnxTe superlattices with constant Hg content have been grown by molecular beam epitaxy for x between 0.22 and 0.4. Films grown at 180 °C show x-ray satellite peaks to the fourteenth order. An annealing study conducted between 185 and 225 °C shows enhanced stability compared to HgTe/CdTe superlattices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101346
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  • 4
    Electronic Resource
    Electronic Resource
    Overlayer metallicity and Fermi-level pinning at the Ca-GaAs(110) interface (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4777-4780 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoemission spectroscopy is used to study chemistry and band bending at the Ca-GaAs(110) interface as a function of metal coverage. An intermediate position of the Fermi level (EF ) resulting from the formation of adsorbate-induced states and native defects is found at low coverage at 0.75–0.9 eV above the top of the valence-band maximum (VBM). An additional abrupt shift of EF leading to a final position 0.55 eV above VBM takes place when metallicity develops in the overlayer. The results for this interface supports Schottky-barrier models based on gap states induced or modified by the metal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341198
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  • 5
    Electronic Resource
    Electronic Resource
    Valence-band effective masses of GaAs (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 447-450 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The density-of-states effective masses for the heavy-hole, light-hole, and split-off valence bands of GaAs have been calculated as a function of energy for each band. The calculations are based on a full k⋅p theory with the most recent values used for the matrix elements. Provision has been made for the effect of the split-off energy on the matrix elements of the split-off band. The results show important nonparabolicities which should be taken into account in modeling the valence band, and rational polynomial fits have been made for ease of computation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341217
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  • 6
    Electronic Resource
    Electronic Resource
    Resistivity of linear scratches in doped (100) n-type single-crystal silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4568-4571 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Four-point probe measurements have been made on (100) n-type Czochralski silicon wafers of initial resistivities 0.016, 0.96, and 3.35 Ω cm. The probe tips straddled linear single scratches formed by a Vickers pyramid diamond. The diamond was dead-loaded with 0.25 N, and the scratches were made in a laboratory air environment with a relative humidity of 50%, as the silicon wafer was held at various elevated temperatures. The measurements show that the relative change in resistivity increases with temperature up to an optimum temperature, after which the resistivity decreases. The temperature at which the maximum occurs and at which the relative change in resistivity occurs depends on the initial resistivity of the wafers; the temperature at which the maximum change in relative resistivity occurs is 200 °C for the 0.016- and 0.96-Ω cm wafers and 250 °C for the 3.35-Ω cm wafer. The relative change between the undamaged wafer resistivity and the resistivity including the scratches for these same samples was 4%, 7%, and 9%. Scanning electron micrographs of the scratches showed that the scratch morphology also depended on the temperature; as the temperature is increased, the grooves become shallow and display evidence of ploughing. An analysis of the four-point probe geometry shows that the voltage in the four-point probe measurement depends on the size and the conductivity of the damage surrounding the scratches.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340156
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  • 7
    Electronic Resource
    Electronic Resource
    Consistent perturbation expansion for phase-changing material in a finite domain (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 5018-5022 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A self-consistent perturbation expansion is developed for the case of a finite slab of phase-changing material with constant boundary conditions corresponding to a "two-phase'' problem. Consistency is achieved by a power-series expansion in functions of both solid and liquid Stefan numbers. Terms through third order are calculated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338322
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  • 8
    Electronic Resource
    Electronic Resource
    Transient phase-change heat transfer in finite bodies: Universal bounds for the solidification (melting) time (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3579-3581 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Simple upper and lower limits for the full solidification (melting) time of isothermally heated slabs, cylinders, and spheres are derived. These bounds, valid for arbitrary wall and initial temperatures, are compared to existing approximate formulas. The bounds can be used for estimates of one-dimensional phase-change heat transfer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336783
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  • 9
    Electronic Resource
    Electronic Resource
    Positive temperature coefficient resistors as high-power pulse switches: Performance limitations, temperature effects, and triggering behavior (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2381-2386 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Positive temperature coefficient resistors are evaluated in the self-heating mode as pulse generators and as opening switches in inductive storage pulse power supplies. Results from both carbon-filled polymer devices, as well as from barium-titanate-based devices, are shown. Theoretical switched powers of close to a 1/4 MW are calculated for honeycomb-shaped BaTiO3 positive temperature coefficient resistors. Switching times in the millisecond range are achieved. Pulse duration varies with ambient temperature, but this can be counteracted by using capacitative triggering. Surface flashover was one of the critical failure mechanisms. The results point towards further improved device designs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337953
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  • 10
    Electronic Resource
    Electronic Resource
    The spherical drift chamber used at LURE for protein crystallography; last developments, performances, and results (invited) (abstract) : INTERNATIONAL CONFERENCE ON SYNCHROTRON RADIATION INSTRUMENTATION (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 1568-1568 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed at LURE a multiwire proportional chamber with a spherical drift space. The wire chamber consists of two cathode planes, comprising 512 wires with a spacing of 1 mm, set on both sides of the anodic plane. The drift space, a gas filled region bounded by two spherically curved electrodes 144 mm apart, offers several advantages: high quantum efficiency, no parallax effect, equivalent spatial resolution in both directions, and smoothing of the pulsed structure of the synchrotron radiation. The gaseous mixture of argon-xenon (58%), ethane (40%), and ethyl alcohol (2%) is circulated in a closed circuit and is continuously purified. Ethyl alcohol, which avoids electrical discharges and sparks, is essential to operate the instrument at high counting rates (〉300 000 events/s). The signal processing, which makes use of one amplifier per cathode wire and of fast priority encoders, determines both coordinates with a resolution of 1 mm and a dead time of 240 ns. Each encoded event is stored into a 512×512 16 bit CAMAC histogramming memory. The experiment is controlled by a PDP11/34 linked to a VAX by a direct memory access channel. A complete set of programs, which performs the data collection and an off line data reduction, is operational. The adaptation of madnes, a general software package which performs an on line data reduction, is under way. Data, collected on a lysozyme crystal to 3.4-A(ring) resolution, give a reliability factor based on intensities of equivalent reflections of 4.7% without absorption corrections; the variation of the detector efficiency is 〈2.7%. A new version of the instrument is under realization. The position encoder, which uses flash ADCs and signal processors, has a resolution of 0.5 mm. Data are stored into a 1024×1024 16 bit VME histogramming memory linked to a micro VAX.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141036
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