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  • 1
    Electronic Resource
    Electronic Resource
    Decomposition of an organophosphonate compound (dimethylmethylphosphonate) on the nickel(111) and palladium(111) surfaces (1990)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 94 (1990), S. 6839-6842 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100380a054
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  • 2
    Electronic Resource
    Electronic Resource
    Protection of a rhodium/alumina catalyst under extreme environmental conditions (1991)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 95 (1991), S. 1699-1703 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100157a040
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  • 3
    Electronic Resource
    Electronic Resource
    The thermal dissociation of decaborane on Si(111)-(7×7) and doping effects in the near surface region (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3155-3160 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal decomposition of decaborane (B10H14) and its doping effects on Si(111)-(7×7) has been investigated by surface spectroscopies. Upon adsorption between 100 and 300 K, molecular decaborane was identified on the surface by high-resolution electron-energy-loss spectroscopy (HREELS) by the absence of Si-H surface species production. The thermal decomposition of adsorbed decaborane molecules at higher temperatures involves a preferential removal of hydrogen from the weaker B—H—B linkage. H2 thermal desorption was observed to cover a wide temperature range between 300 and 900 K. Clean boron deposition on the surface was achieved at ∼900 K. Upon heating to ∼1275 K, extensive boron diffusion into bulk silicon produced a highly B-doped region below the surface (∼103 A(ring)) with a carrier hole concentration on the order of ∼1019 cm−3 depending upon the initial surface boron coverage and annealing conditions. The surface adopted a ((square root of)3×(square root of)3)R30° reconstruction with a nominal 1/3 ML boron occupying subsurface substitutional sites. Both the localized B-Si vibration and carrier surface plasmon excitation were observed by HREELS at 100 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351477
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  • 4
    Electronic Resource
    Electronic Resource
    PH3 surface chemistry on Si(111)-(7×7): A study by Auger spectroscopy and electron stimulated desorption methods (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3669-3678 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The adsorption and decomposition of PH3 on Si(111)-(7×7) was investigated in ultrahigh vacuum by means of temperature programmed desorption, low-energy electron diffraction, Auger electron spectroscopy (AES), and electron stimulated desorption (ESD) methods. Phosphine adsorbs on Si(111)-(7×7) at T=120 K with an initial sticking coefficient of S0(approximately-equal-to)1 through a mobile (extrinsic) precursor state. Some PH3 dissociative adsorption at 120 K is observed. Thermal activation of the adsorbed species results in desorption of a molecular PH3 species up to 550 K. Further heating produces H2(g) desorption at T(approximately-equal-to)740 K and P2(g) desorption at T(approximately-equal-to)1010 K, thus indicating that PH3 decomposition has occurred. AES and ESD studies of the adsorbed species reveal that decomposition takes place by the breaking of PH bonds in PHx(a) to form SiH species on the surface for 120 K〈T〈700 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347168
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  • 5
    Electronic Resource
    Electronic Resource
    Silicon nitride thin film production on Si(111) (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4927-4931 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The production of silicon nitride films by ammonia decomposition on Si(111)-(7×7) has been studied by high-resolution electron energy loss spectroscopy, Auger electron spectroscopy, and low-energy electron diffraction. Silicon nitride films of ≤1 monolayer thickness exhibit a characteristic four mode vibrational spectrum after annealing to 1200 K, while multilayer films produce three vibrational modes at 495, 720, and 1020 cm−1. Upon continued heating of the submonolayer and multilayer nitride films, identical vibrational spectra are obtained, suggesting that both layers form Si3N4. These results are in excellent agreement with the vibrational spectra reported in the literature for Si3N4 layers grown using N atoms on the heated Si(111)-(7×7) surface, signifying that identical nitride films can be grown using ammonia. Si3N4 films grown on Si(111) are able to chemisorb ammonia at 300 K, showing that coordinatively unsaturated silicon sites are probably present on the film surface. This is in agreement with other studies which indicate that the growth mechanism for these silicon nitride films involves silicon enrichment at the film/vacuum interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353810
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  • 6
    Electronic Resource
    Electronic Resource
    Inhibition of atomic hydrogen etching of Si(111) by boron doping (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2954-2957 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Subsurface boron doping reconstructs the Si(111) surface and alters the electronic character of the surface Si atoms. The interaction of atomic hydrogen with the boron-modified Si(111)-((square root of)3×(square root of)3)-R30° surface was studied using temperature programmed desorption (TPD), high-resolution electron energy-loss spectroscopy (HREELS), and low-energy electron diffraction. In comparison to the Si(111)-(7×7) surface, we observe a significantly reduced hydrogen saturation coverage, measured by TPD and HREELS, and the absence of silane production. The ordered (1/3 ML) subsurface boron atoms passivate the surface Si atoms and reduce their reactivity with atomic hydrogen. This leads to a surface condition causing suppression of silicon etching by atomic hydrogen, compared to the unmodified Si(111)-(7×7) surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349320
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  • 7
    Electronic Resource
    Electronic Resource
    Chlorine bonding sites and bonding configurations on Si(100)–(2×1) (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 8308-8323 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A combination of experimental methods has been employed for the study of Cl2 adsorption and reaction on Si(100)–(2×1). At 100 K, Cl2 adsorption occurs rapidly to a coverage of ∼0.7 Cl/Si. This is followed by slower adsorption kinetics with further Cl2 exposure. Two Cl adsorption states are observed experimentally. One of the adsorption states is terminally bonded Cl on the inclined dangling bond of the symmetric Si2 dimer sites, with a vibrational frequency, ν(SiCl) of 550∼600 cm−1. These bonded Cl atoms give four off-normal Cl+ ESDIAD emission beams from the orthogonal domains of silicon dimer sites. The Si–Cl bond angle for this adsorption configuration is estimated to be inclined 25°±4° off-normal. The second Cl adsorption state, a minority species, is bridge bonded Cl with ν(Si2Cl) of ∼295 cm−1 which produces Cl+ ion emission along the surface normal direction. Both adsorption states are present at low temperatures. Irreversible conversion from bridge bonded Cl to terminally bonded Cl begins to occur near 300 K; the conversion is complete near ∼673 K. LEED studies indicate that the (2×1) reconstruction for the substrate is preserved for all Cl coverages. The most probable Cl+ kinetic energy in electron stimulated desorption, ESD, is 1.1−+0.30.6 eV. A significant adsorbate-adsorbate quenching effect reducing the Cl+ ion yield in ESD occurs above a Cl(a) coverage of ∼0.5 ML (monolayer) due to interadsorbate interactions. The maximum Cl+ yield is about 4×10−7 Cl+/e at an electron energy of 120 eV. Temperature programmed desorption results show that SiCl2 is the major etching product which desorbs at about 840 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.464536
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  • 8
    Electronic Resource
    Electronic Resource
    Infrared spectroscopic study of the rotation of chemisorbed methoxy species on an alumina surface (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 5119-5126 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We present experimental and calculated vibration–rotation spectra as a function of temperature for the methoxy species (–OCH3 and –OCD3) chemisorbed on an alumina surface. The axis of rotation is the C–O bond axis. The model for our calculations is that of free rotation, and we describe the methods employed here in full detail. The qualitative agreement between the calculated and experimental spectra suggests that the adsorbed methoxy species is undergoing free rotational motion about the C–O bond axis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.458545
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  • 9
    Electronic Resource
    Electronic Resource
    Evidence for anisotropic vibration of diatomic adsorbates—NO and CO chemisorbed on stepped Pt(112) (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 2208-2213 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Both NO and CO preferentially chemisorb on step sites of the Pt(112) crystal orienting the intermolecular bond in the downstairs direction. Using the digital electron stimulated desorption-ion angular distribution method (ESDIAD), an elliptical angular distribution of the desorbing O+ ions was detected from the NO/Pt(112) system, with the longer axis of the ellipse normal to the step-edge direction. On the other hand, the O+ ESDIAD pattern from the CO/Pt(112) system shows an approximately cylindrical symmetric shape. Heating of the crystal leads to broadening of the ion desorption patterns in both cases without change in the patterns' elliptical or circular cross-sectional geometry. These results are interpreted as being due to ion desorption from NO molecules bonded to two Pt atoms on the step edge and vibrating with a longer amplitude in the direction perpendicular to the step. In the case of CO, bonded to a single Pt atom, the amplitude of vibration is approximately the same in directions parallel and perpendicular to the step edge. Thus, in certain cases ESDIAD patterns may be used to determine the hybridization state of adsorbates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.458012
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  • 10
    Electronic Resource
    Electronic Resource
    A comparative kinetic study of xenon adsorption on a flat Pt(111) and stepped Pt(557) and Pt(112) surfaces (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 7690-7699 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The adsorption and desorption kinetics for Xe on three Pt single crystalline surfaces have been measured using threshold temperature programmed desorption measurements. It has been found that the first-order desorption kinetic parameters at zero coverage for Xe on Pt(111) (E0d =5.73±0.50 kcal/mol; ν0d=1012.5±0.9 s−1) are in excellent agreement with measurements made by a modulated molecular beam method [E0d =5.65±0.35 kcal/mol; ν0d=1012.1 s−1]. The presence of step defect sites of varying density on Pt(557) (1/6 defects) and on Pt(112) (1/3 defects) is shown to have a marked influence on Xe desorption kinetics, producing larger values of E0d(approximately-equal-to)8.5–8.7 kcal/mol and larger values of ν0d (approximately-equal-to)1014 s−1 compared to Pt(111). In addition, for Pt(111), slight attractive Xe–Xe interactions are observed, whereas for Xe adsorption on step sites, repulsive Xe–Xe interactions are observed as the steps fill. Xe adsorption kinetics on Pt(111) at 87 K are consistent with an island growth mechanism. In contrast, on Pt(557) and Pt(112), the adsorption process does not seem to produce island growth on the terraces. These results, taken together, show that using Xe, defect sites on metals may be probed effectively with adsorption and desorption kinetic methods.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.458155
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