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  • American Institute of Physics (AIP)  (74)
  • Springer Nature  (9)
  • National Academy of Sciences  (4)
  • 1990-1994  (87)
  • 1
    Electronic Resource
    Electronic Resource
    Atomic ordering in InGaAsP and InGaAs grown by atmospheric pressure metalorganic chemical vapor deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4118-4124 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a systematic study of atomic ordering in InGaAsP and InGaAs grown by atmospheric pressure metalorganic chemical vapor deposition. InGaAsP lattice matched to InP, grown in a temperature range of 625–650 °C, reveals atomic ordering on the (111) plane (variant I) and the (11¯1¯) plane (variant II) of the group III sublattice. The extent of atomic ordering increases with decreasing growth temperature and increasing In to Ga ratio. No orderings are observed in InGaAsP grown at 700 °C or in In0.53Ga0.47As lattice matched to InP at all our growth temperatures, in contrast to the commonly believed occurrence of maximum ordering at 1/1 In to Ga ratio. The facts that these conditions differ significantly from the reported conditions for InGaAsP grown by other techniques strongly suggests that the atomic ordering formation is controlled by the surface kinetics and growth environment, i.e., chemistry at the reactive gas-solid surface, fluid dynamics of the reactive gases, and growth temperature, rather than the composition and growth temperature. A fine structure observed in the superspots associated with the atomic ordering in the electron diffraction pattern indicates a possible superlattice structure formed by alternating variant I and variant II ordered layers. Misfit strain as well as sulfur dopant are shown to have no effect on the atomic ordering. Zinc dopant, however, totally eliminates the atomic ordering and shifts the energy band gap to a larger band gap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352218
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  • 2
    Electronic Resource
    Electronic Resource
    Temperature dependence of the resistance in the Pt/Ti nonalloyed ohmic contacts to p-InAs induced by rapid thermal processing (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4141-4150 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the resistance in the Pt(60 nm)/Ti(50 nm) nonalloyed ohmic contacts to p-InAs (Zn doped 1×1018 to 1×1019 cm−3 ) induced by rapid thermal processing in the temperature range of 300–600 °C was studied. The ohmic nature of these contacts was attributed to both the low metal-semiconductor interfacial barriers and to the heavily doped semiconductor contacting layers. A phenomenological model was used to fit the measured temperature dependence contact resistance. The results indicated conversion from thermionic emission as the dominant carriers transport mechanism across the interfacial barrier for the as-deposited sample to a combination of thermionic and field emission mechanism for the heat-treated samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346256
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  • 3
    Electronic Resource
    Electronic Resource
    Substrate orientation effects on dopant incorporation in InP grown by metalorganic chemical vapor deposition (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4095-4097 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the doping incorporation and activation of InP growth using metalorganic chemical vapor deposition on 〈100(approximately-greater-than), 〈311(approximately-greater-than)B, and 〈110(approximately-greater-than) InP substrates. Effects of orientation, growth temperature, and V/III fluxes were studied. The dopants used were Zn from dimethylzinc [(CH3)2Zn] and diethylzinc [(C2H5)2Zn], S from hydrogen sulfide [H2S], Si from silane [SiH4], and Sn from tetraethyltin [(C2H5)4Sn]. The incorporation and activation of the p-type dopant Zn are elevated on the 〈311(approximately-greater-than)B and 〈110(approximately-greater-than) planes, while the incorporation is suppressed for the n-type dopants (S, Si, and Sn). The n-type dopant Sn has similar incorporation and activation on the various substrate orientations studied. Anomalous Zn doping on the higher order planes 〈311(approximately-greater-than)B and 〈110(approximately-greater-than) lead to the Zn incorporation exceeding the solubility limit in InP. Incorporated Zn levels as high as 1.0×1019 cm−3 were measured, and the corresponding activated Zn level was as high as 5.4×1018 cm−3 on a 〈110(approximately-greater-than) InP substrate. Interdiffusion of the p-type dopant Zn into the S-doped n-type InP substrate is inhibited by a high S-doping level and segregates at the substrate–epilayer interface. If the S-doping level is lower than the Zn concentration, then Zn diffuses deep into the substrate at a uniform level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352839
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  • 4
    Electronic Resource
    Electronic Resource
    Recombination process and its effect on the dc performance of InP/InGaAs single-heterojunction bipolar transistors (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4444-4447 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple fitting technique based on the current balancing concept has been used to calculate the minority-carrier diffusion length Ln in the base layer of an InP/InGaAs single-heterojunction bipolar transistor grown by metalorganic chemical-vapor deposition. Due to the emitter-base surface-related problem, the minority-carrier lifetime was shown to be dependent on the collector current. This surface-related problem could be a result of the high SiN deposition temperature used in the processing steps. The method predicts value for Ln of 0.97 μm at low collector current and 3.4 μm at high current.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354070
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  • 5
    Electronic Resource
    Electronic Resource
    Hydrogen diffusion and acceptor passivation in p-type GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1723-1731 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deuterium diffusion profiles in GaAs doped with different acceptors of group II (Mg,Zn,Cd) or group IV (C,Ge) have similar characteristics even though the neutralization of acceptors measured at 300 K is not always efficient. Conductivity and Hall measurements have been used to study the electrical characteristics of hydrogenated p-type GaAs epilayers. The temperature dependence of the free-carrier concentration and hole mobility before and after hydrogenation shows that the neutralization of acceptors by atomic hydrogen leads to the elimination of the shallow acceptor states. Infrared-absorption lines associated with hydrogen-acceptor complexes are observed for all acceptors except magnesium. It is established that the microscopic structure of hydrogen-acceptor complexes depends on the acceptor site in the lattice.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353207
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  • 6
    Electronic Resource
    Electronic Resource
    Optical properties of semiconductor lasers with hydrostatic pressure (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 737-739 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The pressure dependence of the stimulated emission of a 1.3 μm In1−xGaxAsyP1−y (y=0.6) buried heterostructure laser has been measured up to 2.5 GPa. In this pressure range the laser output was tuned over 200 nm. The laser output energy varied linearly with pressure at a rate of (80±3) meV/GPa, corresponding to variation of the direct band gap of the InGaAsP active layer with pressure. From the measured energy shift and from calculations of the fractional volume change in the active layer for the strain conditions of the epilayer, a hydrostatic deformation potential of (−5.7±0.1) eV was obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355242
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  • 7
    Electronic Resource
    Electronic Resource
    Intersecting resonances and chaos in a three-oscillator model. I. Classical studies (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 2438-2450 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We consider a model system of three weakly coupled, weakly anharmonic oscillators, containing two near 2:1 Fermi resonances. This system is initially reduced via a resonance approximation to one of two coupled pendula, each pendulum representing one of the interoscillator resonances. This leads to a natural description of the system in terms of analytically predictable resonance zones and their intersection in action space. A full numerical analysis of the classical dynamics of the two-pendulum system is given, with respect to both the appearance of stochasticity and the development of periodic orbits in the resulting two-dimensional area-preserving map. The success of the resonance approximation in describing adequately the behavior of the three-oscillator model is shown by comparison with a representative study of the classical dynamics of the full three-oscillator model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.463082
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  • 8
    Electronic Resource
    Electronic Resource
    Comment on: Dielectric constant of a hard-sphere fluid with induced dipoles and quadrupoles (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 96 (1992), S. 5552-5553 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Our previously published virial expansion describing deviations from Clausius–Mossotti behavior in the dielectric constant of a hard-sphere fluid within the quadrupole approximation [Mol. Phys. 46, 715 (1982)] is shown to account well for recent simulation results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.462696
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  • 9
    Electronic Resource
    Electronic Resource
    Self-consistent mean-field analysis of classical many-body systems at finite temperature (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 96 (1992), S. 4574-4582 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We present a methodology for calculating the thermodynamic and configurational properties of a classical system of N interacting particles. For solids we show how the method can be used to determine the structural properties in the equilibrium state. As an application we analyze the formation of misfit dislocations in a nickel-gold bicrystal with a (100) interface. We show that the dislocation exists in a state of minimum Helmholtz free energy. The equilibrium structure and energy are also determined through Monte Carlo calculations and they show good agreement with the results obtained from our method.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.462793
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  • 10
    Electronic Resource
    Electronic Resource
    Dielectric constant of a hard-sphere fluid with induced dipoles and quadrupoles: Comparison of theory and simulation (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 96 (1992), S. 4812-4813 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Our previously published virial expansion describing deviations from Clausius–Mossotti behavior in the dielectric constant of a hard-sphere fluid within the quadrupole approximation [Mol. Phys. 46, 715 (1982)] is shown to account well for recent simulation results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.462769
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