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  • 1
    Electronic Resource
    Electronic Resource
    Stress-released layer formed by pulsed ruby laser annealing on GaAs-on-Si (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3358-3361 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of short pulsed ruby laser annealing on GaAs layers grown on Si substrates by metalorganic chemical vapor deposition have been characterized by Raman spectroscopy and double-crystal x-ray diffraction. After laser melting and regrowth, the stress-released layer is formed in the near-surface. The formation of the stress-released layer results in the microcracking of the pulsed-laser-annealed GaAs surface. However, the high crystalline quality of this stress-released layer is detected. Furthermore, when GaAs layer is overgrown on this stress-released layer, this layer plays a role of blocking the dislocation threading into the overgrown GaAs layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345374
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  • 2
    Electronic Resource
    Electronic Resource
    Defect band behavior in p-Cd0.96Zn0.04Te by hydrogen passivation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4077-4079 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence measurements were carried out in order to investigate the dependence of the optical properties of p-Cd0.96Zn0.04Te single crystals on hydrogen passivation conditions. After the p-Cd0.96Zn0.04Te was annealed at 500 °C in a Cd atmosphere for 5 h, the luminescence due to the recombination of the electrons in the conduction band with acceptors (eA°) and to the donor–acceptor pair (DAP) transitions disappeared. After the p-Cd0.96Zn0.04Te was hydrogenated, the intensity of the exciton luminescence increased so that the (eA°) and DAP peaks related to the Cd vacancies disappeared, and the defect band in the low energy range between 1.4 and 1.5 eV also vanished. These results indicate that hydrogen atoms passivated not only shallow donors but also deep acceptor impurities and that the hydrogen atoms were separated from the hydrogenated samples at 400 °C due to their thermal energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352833
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  • 3
    Electronic Resource
    Electronic Resource
    Dependence of the optical properties of p-CdTe and p-Cd0.96Zn0.04Te on the bromine concentration in a bromine-methanol etching solution (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4074-4076 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence measurements were carried out to investigate the dependence of the optical properties of p-CdTe and p-Cd0.96Zn0.04Te on various relative concentrations of bromine in a mixture of methanol and bromine. As the bromine concentration increased, the intensity of the luminescence increased; additionally, an exciton bound to a neutral acceptor (A°X) peak at 1.588 eV in p-CdTe was resolved into an exciton bound to neutral donor (D°X) peak at 1.592 eV and an A°X peak. The mixed bands of the 1.574 and 1.546 eV peaks were well resolved by using an etching bromine concentration of 2%; in particular, the intensities of the D°X and 1.574 eV peaks increased as much as five and seven times, respectively. The intensity of the peak at 1.48 eV related to defects also increased. The intensity of A°X at 1.609 eV in p-Cd0.96Zn0.04Te changed slightly with the bromine concentration. The intensities of the luminescence peaks due to the recombination of the electrons in conduction band with acceptors and to the defect relation did not vary. These results indicated that the number of Cd vacancies could be reduced due to the addition of Zn.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352832
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  • 4
    Electronic Resource
    Electronic Resource
    Characterization of 28Si+ and 40Ar+ ion-implanted epitaxial ReSi2 films on an n-Si(100) substrate (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1046-1050 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural and electrical characteristics of 300 keV Si+ or 380 keV Ar+ ion-implanted epitaxial ReSi2 films grown on an n-Si(100) substrate have been studied by using 2 MeV 4He+ ion backscattering spectrometry, x-ray diffraction, high-resolution transmission electron microscopy, and electrical measurement. Ion implantation causes static disorder in the film, which overlap and grow to become an amorphous layer. The threshold dose for amorphizing the ReSi2 film is ∼5×1014/cm2 for 28Si+ and ∼1×1014/cm2 for 40Ar+. Although the resistivity of the implanted ReSi2 film decreases when the degree of disorder (or the implantation dose) is increased, the resistivity reaches a minimum value at a dose of ∼1×1015/cm2 for Si+ or ∼5×1014/cm2 for Ar+. The 28Si+-implanted amorphous ReSi2 films recovered original epitaxy after thermal annealing at 700 °C for 30 min in vacuum, as do the partly amorphized ReSi2 films by 40Ar+ implantation. On the other hand, those films fully amorphized by 40Ar+ implantation (dose≥1×1014/cm2) did not recover after thermal annealing, even when exposed to a temperature as high as 1000 °C for 30 min.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354951
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  • 5
    Electronic Resource
    Electronic Resource
    Nanocrystalline Nd12Fe80B6Nb1Ga1 melt-spun ribbon with textured surface (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4756-4758 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In Nd-Fe-B melt-spun ribbon, Ga addition is found to be effective for the orientation of c axis of 2-14-1 grains normal to the ribbon plane even at high wheel surface velocity. A Nd12Fe80B6Nb1Ga1 melt-spun ribbon quenched with optimum wheel surface velocity was found to have textured structure on the free-side surface. Furthermore, this melt-spun ribbon was composed of fine grains of about 30 nm in size which is believed to be enough to provoke intergrain exchange interaction. The remanence and energy product of the field aligned powder of this melt-spun ribbon was about 7% and 20% higher than those of the not-aligned powder, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355904
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  • 6
    Electronic Resource
    Electronic Resource
    Hydrogenation effect on electrical and optical properties of GaAs epilayers grown on Si substrates by metalorganic chemical vapor deposition (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2405-2407 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenation effects on electrical and optical properties in GaAs epilayers grown on Si substrate by metalorganic chemical vapor deposition have been investigated. In as-grown GaAs layers on Si substrates, typically four deep levels at 0.81, 0.68, 0.57, and 0.53 eV below the conduction band were observed by deep level transient spectroscopy. After hydrogen plasma exposure at 250 °C for 2.5 h, the 0.68 eV level disappeared. In addition, the reverse leakage current in the hydrogenated sample decreased by three orders of magnitude compared to the untreated sample. These effects persist after dehydrogenation process with a 5 min, 400 °C anneal. The results indicate that the hydrogenation for GaAs-on-Si has some benefits to its device application.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104885
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  • 7
    Electronic Resource
    Electronic Resource
    Properties of the quantum wires grown on V-grooved Al0.3Ga0.7As/GaAs substrate by atmospheric pressure metalorganic chemical vapor deposition (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3052-3054 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the successful growth of quantum wire (QWR) structures of AlxGa1−xAs/ GaAs /AlxGa1−xAs on a V-grooved Al0.3Ga0.7As/GaAs substrate. The samples are studied by photoluminescence spectra. The structures are grown by atmospheric pressure metalorganic chemical vapor deposition (MOCVD). The GaAs QWRs are fabricated on a V-grooved Al0.3Ga0.7As/GaAs substrate instead of GaAs substrate. Due to the effect of the Al0.3Ga0.7As layer, a necking area is formed in the side quantum wells (QWLs) near the bottom of the V groove. This results in a reduction of the lateral widths of the QWRs. Also, the luminescence of the QWRs is greatly enhanced in spite of low packing density. It is the first structure made in attempts to produce the quantum-size effects on a V-grooved substrate with non-(111) facets.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110255
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  • 8
    Electronic Resource
    Electronic Resource
    Deep electron traps in GaAs layers grown on (100)Si substrates by metalorganic chemical vapor deposition (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2454-2456 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep electron traps in GaAs layers grown on (100) 3 °-off Si substrates by metalorganic chemical vapor deposition were investigated by deep-level transient spectroscopy and a computer simulation method. The four electron traps with the activation energies of 0.81, 0.68, 0.57, and 0.53 eV below the conduction band were measured in GaAs epilayers on Si substrates, whereas only the EL2 level (Ec−0.81 eV) was detected in GaAs on a GaAs substrate. From the dependencies of concentration on the thickness of GaAs epilayer and Si substrate, it was assumed that the Ec−0.57 eV trap might be a Si-dislocation complex defect. The Ec−0.68 eV trap showed a similar behavior to that of the deep trap created in the plastically deformed bulk GaAs, and then its origin was supposed to be a defect induced by a stress due to the differences of thermal expansion coefficient and lattice parameter between Si and GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345493
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  • 9
    Electronic Resource
    Electronic Resource
    A study on the Kerr effect enhancement by the multidielectric layer structure : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5987-5988 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Many types of magneto-optical structures have been investigated to improve the MO Kerr effect. We have studied the enhancement of the MO Kerr effect in the Tb21Fe79 amorphous film having a multidielectric structure in which the TiO2 layer is sandwiched by SiNx layers. The variations of Kerr angle and reflectivity with the thickness of dielectric layer are calculated by using the reiterative formula [M. Mansuripur, G. A. N. Connel, and J. W. Goodman, J. Appl. Phys. 53, 4485 (1982)]. Experiment and simulation results are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347813
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  • 10
    Electronic Resource
    Electronic Resource
    Optical properties of AgGaSe2 and AgGaSe2:Co2+ single crystals (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7797-7799 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the optical energy gaps in AgGaSe2 and AgGaSe2:Co2+ single crystals has been investigated. The impurity optical absorption of AgGaSe2:Co2+ has also been studied. In the temperature dependence of the energy gaps, the temperature coefficients (dEg/dT) are measured to be 1.8×10−4 eV/K (10–60 K) and −3.2×10−4 eV/K (95–300 K) for the AgGaSe2, and 8.9×10−5 eV/K (10–60 K) and −1.0×10−4 eV/K(80–300 K) for the AgGaSe2:Co2+, respectively. In the optical-absorption spectrum of the AgGaSe2:Co2+, three absorption bands of 1.54, 0.72, and 0.51 eV are observed. It is identified that these impurity absorption peaks are attributed to the electronic transitions between the split energy levels of Co2+ ion with Td symmetry sites of the AgGaSe2 host lattice.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347507
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