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  • American Institute of Physics (AIP)  (3)
  • Wiley-Blackwell  (1)
  • 1990-1994  (4)
  • 1950-1954
  • 1930-1934
  • 1
    Electronic Resource
    Electronic Resource
    Kinetic and structural study of the epitaxial realignment of polycrystalline Si films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 638-647 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial realignment of undoped and As doped polysilicon films onto crystalline silicon substrates induced by high-temperature rapid-thermal annealing has been investigated. It is shown that the realignment mode and the kinetics of the process are intimately related to the microcrystalline structure of the layers under investigation, to the morphology of the native oxide film present at the interface, and to the presence of As atoms dispersed in the deposited layers. For layers having fine grain dimensions, compared to the film thickness, the realignment takes place via the motion of the crystal-polysilicon interface towards the surface. This is observed in undoped layers and in layers which have been subjected to a high-temperature anneal before As doping. The preimplant anneal disrupts the interfacial oxide film and reduces the thermal cycle needed to complete the realignment of the polysilicon layers. In layers which have not experienced any thermal treatment before As doping, it is seen that the grain size first increases to dimensions on the order of the film thickness, and the realignment transformation then proceeds by lateral growth of epitaxial columns in a manner similar to secondary grain growth. The kinetics of both realignment modes are thermally activated and the atomic limiting processes have been tentatively identified to be As diffusion in bulk Si for As doped layers and Si self diffusion for undoped films. The effect of the microcrystalline structure on the realignment kinetics is attributed to its relationship with the driving force governing the realignment transformation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351348
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  • 2
    Electronic Resource
    Electronic Resource
    Realignment of As doped polycrystalline Si films by double step annealing (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2507-2509 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The realignment by rapid thermal annealing of polycrystalline silicon layers deposited onto 〈100〉 Si substrates can occur either through the planar movement of the interface towards the surface or through the lateral growth of columnar epitaxial islands. An anneal at 1075 °C for 15 s, followed by As implantation, is shown to cause planar growth even at subsequent anneal temperatures as low as 900 °C. In contrast, the direct annealing of As implanted samples induces columnar realignment. Further, the As redistribution throughout the polycrystalline layers and its diffusion in the crystalline substrate is considerably reduced in the case of the double step annealing. The different regrowth modes are related to the morphology of the interfacial oxide layer and to the microcrystalline structure of the polycrystalline layers during the initial stages of the realignment process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105935
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  • 3
    Electronic Resource
    Electronic Resource
    Size effects in the epitaxial realignment of polycrystalline silicon films onto Si substrates (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1895-1897 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial realignment of As-doped polycrystalline silicon layers has been investigated by varying the dimensions of the contact area with the crystalline silicon substrate. Rectangular strips of width in the 0.2–100 μm range and length in the mm range were used. In the 1–100 μm strips the realignment proceeds by the two-dimensional growth of epitaxial columns, while in the 0.2–0.3 μm strips by the one-dimensional growth. The experimental realigned fractions quantitatively follow the trend predicted by the classical model of nucleation and growth in two and one dimension, respectively. The growth kinetics is slowed down in the small width geometry and the thermal budget to realign the films increases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109535
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  • 4
    Electronic Resource
    Electronic Resource
    The separation of affinity flocculated yeast cell debris using a pilot-plant scroll decanter centrifuge (1990)
    New York, NY [u.a.] : Wiley-Blackwell
    Biotechnology and Bioengineering 36 (1990), S. 397-401 
    Details
    ISSN: 0006-3592
    Keywords: Chemistry ; Biochemistry and Biotechnology
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Biology , Process Engineering, Biotechnology, Nutrition Technology
    Notes: The use of a scroll decanter centrifuge for the removal and dewatering of affinity-flocculated yeast cell debris from a crude homogenate is described. Laboratory shear modulus measurements were used to compare the structure of flocculated and nonflocculated sediments and to indicate the dewatering conditions under which the sediment could be discharged from the centrifuge. The structure of the flocculated sediment was such that a dry beach could be used within the centrifuge while still being able to discharge the solids. The scroll decanter performance for recovery and dewatering of the flocculated homogenate was found to be independent of feed flow rate and differential scroll rate. Eighty-five percent of the solid material was recovered from the flocculated homogenate while the extent of sediment dewatering resulted in the loss of only 7% of the soluble protein in the sediment. The supernatant clarity matched that achieved by low-gravity laboratory centrifugation studies.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/bit.260360410
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