ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 1990-1994  (343)
Collection
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of medicinal chemistry 35 (1992), S. 4175-4179 
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3377-3384 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of the effects of annealing temperature on phosphorus-implanted silicon films is carried out. Fourier transform infrared spectroscopy has been performed with two different instruments in the spectral ranges of 0.75–4 μm and 3–25 μm. In the first spectrum range special attention was given to the influence of implantation dose on reflectivity. The minimum reflectivity associated with plasma resonance has been fully employed for estimation of the electrical activation of implanted impurities. Other conclusions concerning the activation of free carriers (implanted impurities) with implantation dose and annealing temperature have been reached.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 8032-8038 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman and electrical characterization measurements are performed in order to study the effects of thermal annealing on phosphorus implanted silicon wafers. The silicon layers were implanted for various implantation energies and doses, below, and over the critical dose of amorphization. The post-implanted period was followed by thermal isochronal annealing at various temperatures. Special attention has been given to the amorphous/crystal transition occurring at various annealing temperatures. A bi layer model [R. Loudon, J. Phys. (Paris) 26, 677 (1965)] has been used for a quantitative determination of the annealing temperature at which a complete annihilation of implantation defects takes place. For this analysis, Raman spectra, resistivity depth profiles, as well as 1D-SUPREM III simulation were used.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    R & D management 21 (1991), S. 0 
    ISSN: 1467-9310
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Economics
    Notes: Since 1971, that is nine years after gaining its independence, Algeria has among some Third World countries formulated an ambitious Science and Technology (S&T) Policy. In the last few years, the relevant administrative structure has been completed by installing a centralised body at the highest level. Policy itself has changed very little, and remained in some aspects well behind developments in the structure. In this paper, the author intends to consider the evolution of both structure and policy of Algeria's research and development (R&D); and the extent of their coherence or harmony and their linkages with industry.Even though structure and policy are the key factors affecting R&D effectiveness of a country, no significant success could be achieved without strengthening the relevant network allowing for the technical competence to be used effectively. Hence, the main theme of the paper concentrates on Algeria's need to review its R&D system to allow both structure and policy to be effective or cause relevant activities to be integrated within the production system, build better technological capabilities, and work for a more efficient industrial development.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of natural products 55 (1992), S. 899-903 
    ISSN: 1520-6025
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Industrial & engineering chemistry research 29 (1990), S. 2389-2401 
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 3378-3381 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A high-resolution noncontact scanned probe technique has been developed for sampling the internal signals of an operating integrated circuit. The signal waveform is extracted by sensing the localized electrostatic force between a small probe and point on the circuit being measured. A heterodyne approach is used to enable the sampled measurement of high-frequency digital or analog waveforms. In conjunction with a nulling method, the technique is capable of accurate signal measurement without complex calibration or probe positioning, and can be performed over passivated structures. Measurement of digital and analog signals is demonstrated with a voltage accuracy of less than 100 mV.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 61-68 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of high-dose silicon and arsenic ion implantation on the electrical and structural properties of silicon layers are investigated. Combining electrical, transmission electron microscopy, and triple-crystal x-ray-diffraction measurements made it possible to characterize the effects of thermal annealing both on defect annihilation mechanisms and on electrical doping activation. It is clearly shown that a low-temperature (≤450 °C) electrical activation process is taking place in the amorphous surface layer induced by high-dose ion implantation. This phenomenon is found to be completely independent of the recrystallization regrowth by solid phase epitaxy which occurs at higher temperature. This electrical activation process is found to be well described by a local relaxation model involving point defect migration.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 9
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For this cubic pseudobinary compound, the bifurcation of the magnetization (M) vs temperature for warming and cooling in low fields (after zero-field cooling) indicates a spin-glass freezing point (Tg) of ∼20 K. Isotherms of M vs cooling field show zero spontaneous moments down to 4.2 K but an initial susceptibility that almost diverges below Tg〈sbxs〉. From rotational measurements of M as a vector in a fixed field (H) at 4.2 K, the anisotropy field produced by field cooling (HK) is found to turn rigidly with the sample for H below ∼1 kOe. At higher H, HK rotates up to some angle relative to H and then stays fixed as the sample continues to turn, thus exhibiting a frictional rotation relative to the sample. Nevertheless, HK remains sizeable in magnitude (∼12 kOe). Comparisons are made with analogous results for isostructural (Tb, Y) Ag, where spin-glass order coexists with antiferromagnetism, as well as for various prototypal spin-glass alloys.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 5261-5261 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: As nonmagnetic yttrium is substituted for terbium, TbAg changes from a conventional antiferromagnet into a complex magnetic system with components of both commensurate and incommensurate spin structures and bulk magnetic properties typical of spin-glass behavior for x≤0.5. We have carried out neutron diffraction experiments on polycrystalline samples with x=0.15, 0.5, and 1.0 to complement our earlier studies for x=0.3.1 For x=0.5, the system orders at T≈58 K into the mixed structure observed for x=0.3, but with a much sharper (1/2 1/2 0) peak. On cooling below 40 K the incommensurate peaks almost disappear, remaining only as low-intensity shoulders of the commensurate peak at the lowest temperature measured (T=4 K). Hysteresis is observed in the relative intensity of the two components of the structure between 45 and 55 K. For x=0.15, the system orders at T≈18 K into the two-component structure, but with an approximately constant intensity ratio and no evidence of hysteresis, similar to the behavior found for x=0.3. Thus, as the Tb concentration decreases, the relative stability of the commensurate and incommensurate structures appears to change. This balance between competing magnetic structures will be related to the spin-glass properties observed in this system.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...