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  • 1990-1994  (232)
  • 1985-1989  (205)
  • 1930-1934  (9)
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  • 1
    Monograph available for loan
    Monograph available for loan
    Diatoms and lake acidity : reconstructing pH from siliceous algal remains in lake sediments (1986)
    Dordrecht [u.a.] : Junk
    Associated volumes
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    Call number: AWI Bio-21-94351
    In: Developments in hydrobiology, 29
    Type of Medium: Monograph available for loan
    Pages: VII, 307 Seiten , Illustrationen
    ISBN: 9061935369
    Series Statement: Developments in hydrobiology 29
    URL: http://www.loc.gov/catdir/enhancements/fy0822/85018095-b.html
    URL: http://bvbr.bib-bvb.de:8991/exlibris/aleph/a22_1/apache_media/85YHDTCSIEMYRC2ACHYXKHGQ7X9158.pdf
    Language: English
    Note: Contents Preface 1. Gunnar Nygaard: A guiding influence on paleolimnological research / by J. Kristiansen 2. Diatoms as indicators of pH: An historical review / by R.W. Battarbee, J.P. Smol & J. Meriläinen Part one: Taxonomy 3. The genus Melosira from soft-water lakes with special reference to northern Michigan, Wisconsin and Minnesota / by K.E. Camburn & J.C. Kingston 4. A new diatom species, Fragilaria acidobiontica, from acidic lakes in northeastern North America / by D.F. Charles 5. Two forms of Tabellaria binalis (Ehr.) Grun. in two acid lakes in Galloway, Scotland / by R.J. Flower Part two: Extant floras 6. Phytoplankton in selected LaCloche (Ontario) lakes, pH 4.2-7.0, with special reference to algaeas indicators of chemical characteristics / by P.M. Stokes & Y.K. Yung 7. The representation of living diatom communities in deep-water sedimentary diatom assemblages in two Maine (U.S.A.) lakes / by D.M. DeNicola 8. Spatial and temporal variability in periphytic diatom communities: Palaeoecological significance in an acidified lake / by V.J. Jones & R.J. Flower Part three: Paleolimnological applications 9. Relationships between diatom assemblages in lake surface-sediments and limnological characteristics in southern Norway / by D.S. Anderson, R.B. Davis & F. Berge 10. Diatom evidence for neutralization in acid surface mine lakes / by R.B. Brugam & M. Lusk 11. The recent history of a naturally acidic lake (Cone Pond, N.H.) / by J. Ford 12. East african diatoms and water pH / by F. Gasse 13. Acidification of small lakes in Finland documented by sedimentary diatom and chrysophycean remains / by K. Tolonen, M. Liukkonen, R. Harjula & A. Patila 14. Applications of multivariate techniques to infer limnological conditions from diatom assemblages / by P. Huttunen & J. Meriläinen 15. A sedimentary diatom record of severe acidification in Lake Blamissusjon, N. Sweden, through natural soil processes / by I. Renberg 16. Diatom responses to acidification and lime treatment in a clear-water lake: Comparison of two methods of analysis of a diatom stratigraphy / by H. Simola 17. Acidification of four lakes in the Federal Republic of Germany as reflected by diatom assemblages, cladoceran remains and sediment chemistry / by K. Arzet, D. Krause-Dellin & C. Steinberg 18. Late-glacial and Holocene acidity changes in Adirondack (N.Y.) lakes / by D.R. Whitehead, D.F. Charles, S.J. Jackson, S.E. Reed & M.C. Sheehan 19. Chrysophycean microfossils as indicators of lakewater pH / by J.P. Smol Part four: Overview 20. The use of sedimentary remains of siliceous algae for inferring past chemistry of lake water-problems, potential and research needs / by R.B. Davis & J.P. Smol Indices Index of lakes Index of genera Subject index
    Location: AWI Reading room
    Branch Library: AWI Library
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  • 2
    Electronic Resource
    Electronic Resource
    Relative structure-inhibition analyses of the N-benzoyl and N-(phenylsulfonyl) amino acid aldose reductase inhibitors (1991)
    s.l. : American Chemical Society
    Journal of medicinal chemistry 34 (1991), S. 2120-2126 
    Details
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jm00111a030
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  • 3
    Electronic Resource
    Electronic Resource
    Metal Schottky barrier contacts to alpha 6H-SiC (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4757-4760 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Formation of Schottky barrier contacts to n-type 6H-SiC for a number of metals chosen to include a variety of physical and chemical properties has been investigated. The metals (Pd, Au, Ag, Tb, Er, Mn, Al, and Mg) were deposited onto room temperature surfaces terminated with a submonolayer coverage of oxygen. The metal/6H-SiC interface chemistry and Schottky barrier height φB during contact formation were obtained with x-ray photoemission spectroscopy; the electrical properties of subsequently formed thick contacts were characterized by current-voltage and capacitance-voltage techniques. The øB values for these metals extend over a wide 1.3 eV range. To a varying degree φB depends on the 6H-SiC crystal face (Si vs C). Mg and Al (Si face of latter) have φB=0.3 eV, a value which is suitable for nonalloyed ohmic contacts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352086
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  • 4
    Electronic Resource
    Electronic Resource
    The role of geometric considerations in the diamond-cubic boron nitride heteroepitaxial system (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2679-2681 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the methods and results of a theoretical study of the diamond-cubic boron nitride [BNcub] heteroepitaxial system. We introduce a general, geometric reciprocal space technique for evaluating candidate epitaxial configurations, and a novel system of essentially geometric criteria to order them from most to least likely to occur. In the diamond- BNcub system, it is found that low index like planes require a relatively small strain of 1.37% from bulk parameters. The unlike epitaxial configuration which pairs diamond{100} with BNcub{221} and yields two-dimensional coincidence with the same strain is favored above other low index mixed configurations. The essentially geometric nature of this epitaxial system is highlighted.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348663
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  • 5
    Electronic Resource
    Electronic Resource
    A high-energy spherical grating monochromator for soft x rays at the Daresbury SRS (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 4349-4353 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A vertically dispersing high-energy spherical grating monochromator (HESGM) has been installed on the synchrotron radiation source (SRS) at the Daresbury Laboratory. The instrument has no entrance slit and provides a high intensity source of x rays of energy 250–1400 eV focused into a small spot suitable for surface spectroscopy. Photoabsorption features of 240 meV have been resolved, but the resolution of the instrument is dependent on the SRS stored beam current. The degree of linear polarization has been measured at the carbon K edge to be 0.80.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143735
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  • 6
    Electronic Resource
    Electronic Resource
    Determination of ionization energies of the nitrogen donors in 6H-SiC by admittance spectroscopy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1956-1958 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nitrogen donor levels have been studied by admittance spectroscopy between 20 and 200 K in Schottky barriers made on lightly n-type epitaxial 6H-SiC layers. Measurements at different frequencies yield different freezeout temperatures which in turn are used to determine the donor level energies. Two electron traps at Ec−0.082 eV and at Ec−0.140 eV were detected. These levels are associated with nitrogen, respectively, at the hexagonal sites for the former and at the cubic sites for the latter level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357655
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  • 7
    Electronic Resource
    Electronic Resource
    New rare-earth intermetallic phases R3(Fe,M)29Xn: (R=Ce, Pr, Nd, Sm, Gd; M=Ti, V, Cr, Mn; and X=H, N, C) (invited) : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6138-6143 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: New rare-earth (R), iron-rich ternary intermetallic compounds of the form R3(Fe,M)29 with the monoclinic Nd3(Fe,Ti)29 structure (space group P21/c, #14, Z=2) have recently been shown to form with R=Ce, Nd, Pr, Sm, and Gd, and M=Ti, V, Cr, and Mn. This novel structure is derived from the alternate stacking of Th2Zn17 and ThMn12-type segments and contains two R sites and fifteen Fe(M) sites. Reported Curie temperatures of the 3:29 compounds range from 296 K (R=Ce, M=Cr) to 524 K (R=Sm, M=V). The 3:29 compounds all show improved magnetic properties after interstitial modification with H or N; in particular, room-temperature coercivity has been reported in Sm3(Fe,Ti)29N5, making this compound a candidate for possible permanent-magnet applications. In this article we will review the work carried out to date on the 3:29 compounds.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358333
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  • 8
    Electronic Resource
    Electronic Resource
    High-temperature depletion-mode metal-oxide-semiconductor field-effect transistors in beta-SiC thin films (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2028-2030 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Depletion-mode n-channel metal-oxide-semiconductor field-effect transistors were fabricated on n-type β-SiC (111) thin films epitaxially grown by chemical vapor deposition on the Si (0001) face of 6H α-SiC single crystals. The gate oxide was thermally grown on the SiC; the source and drain were doped n+ by N+ ion implantation at 823 K. Stable saturation and low subthreshold current were achieved at drain voltages exceeding 25 V. Transconductances as high as 11.9 mS/mm were achieved. Stable transistor action was observed at temperatures as high as 923 K, the highest temperature reported to date for a transistor in any material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98282
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  • 9
    Electronic Resource
    Electronic Resource
    Temperature dependence of the current-voltage characteristics of metal-semiconductor field-effect transistors in n-type β-SiC grown via chemical vapor deposition (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 442-444 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal-semiconductor field-effect transistors (MESFET's) have been fabricated in an unintentionally doped, n-type β-SiC thin film grown by chemical vapor deposition (CVD). This n-type layer was deposited on a monocrystalline p-type β-SiC (100) CVD layer previously grown on a p-type Si (100) substrate. The buried p layer allowed the devices to be fabricated several microns away from the SiC/Si interface region which contained numerous defects formed as a result of the poor lattice match and different coefficients of thermal expansion between SiC and Si. Thermally evaporated Au was utilized for the gate contact. Sputtered TaSi2 was employed for the source and drain contacts. The gate lengths and channel depths of these MESFET's were 3.5 and 0.60 μm, respectively. Saturation of the drain currents was achieved at room temperature. Furthermore, the current-voltage characteristics, measured from 298 to 623 K for the first time, indicated that these MESFET's performed reasonably well throughout this temperature range. The maximum transconductance obtained was 1.6 mS/mm; the value of this parameter decreased with temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98416
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  • 10
    Electronic Resource
    Electronic Resource
    Characterization of device parameters in high-temperature metal-oxide-semiconductor field-effect transistors in β-SiC thin films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2168-2177 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Both inversion- and depletion-mode n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) have been fabricated on β-SiC thin films grown by chemical-vapor deposition. The inversion-mode devices were made on in situ doped (Al) p-type β-SiC(100) thin films grown on Si(100) substrates. The depletion-mode MOSFETs were made on n-type β-SiC(111) thin films grown on the Si(0001) face of a 6H α-SiC substrates. Stable saturation and low subthreshold currents were achieved at drain-source voltages exceeding 5 and 25 V for the inversion-mode and depletion-mode devices, respectively. The transconductance increased with temperature up to 673 K for the short-gate-length devices, of either mode, and then decreased with further increases in temperature. It is proposed that the transconductances and threshold voltages for the inversion-mode devices are greatly affected by minority-carrier injection from the source. Stable transistor action was observed for both types of devices at temperatures up to 823 K, with the depletion-mode devices operating very well up to 923 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341731
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