ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The segregation of B from Si1−xGex quantum wells grown using molecular beam epitaxy on Si(100) and Si(110) was investigated using secondary ion mass spectrometry. When a 3 nm B doping slab (n=1019/cm3) was placed in the center of a 6 nm Si1−xGex quantum well, the B profiles had two distinct exponential decay lengths, ΔSiGe, the Ge-controlled B decay length and ΔSi, the B decay length normally measured in Si. ΔSiGe was the same for Si(100) and Si(110) and independent of Ge concentration in the well for 0.1≤x≤0.5. As the Ge concentration was increased in the well, the location of the transition point, from ΔSiGe to ΔSi, which was always found far outside of the SiGe quantum well, increased in distance from the center of the well.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.365359
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