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  • American Institute of Physics (AIP)  (4)
  • International Union of Crystallography (IUCr)  (1)
  • 1995-1999  (5)
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  • 1
    Electronic Resource
    Electronic Resource
    An 18-cm-diam intense beam current broad beam ion source for surface modifications (abstract) : Proceedings of the 6th international conference on ion sources (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 1217-1217 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A large diameter intense beam current broad beam ion source used for surface modifications is described. It consists of a discharge chamber and a three-grid extraction system. The discharge chamber has two anodes (front and rear) and a specially designed cusped magnetic field is used for forming a large field free region in the chamber so that a very uniform and intense ion beam has been extracted from this source. Beam currents of more than 900 mA for hydrogen and 750 mA for argon at 2.5 kV extraction voltage have been obtained. The highest beam current density is over 2.5 mA/cm2, measured at a location 25 cm downstream of the source. The density uniformity changes from +5% to +15% over a 15-cm-diam circle. The feature and the performance of this source will be described in this paper. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146736
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  • 2
    Electronic Resource
    Electronic Resource
    Electron beam evaporation broad beam metal ion source for material modifications : Proceedings of the 6th international conference on ion sources (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 924-926 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This paper describes a new type of electron beam evaporation intense beam current broad beam metal ion source. In this ion source, a focusing electron beam is used to bombard and vaporize the metal and other solid elements within the same chamber where the metal and solid element atoms are ionized by arc discharge. It can operate with gaseous and solid elements. Both pure or mixed ions with single or multiple charge states can also be extracted from this source. The performance and the characteristics of this source have tested. Ion beams of a series of elements, which include C, W, Ta, Mo, Cr, Ti, B, Cu, Ni, AI, Ar, N, etc., have been extracted, and the highest beam current is up to 90 mA. By using this ion beam bombardment, a good mixture between substrate and film was observed. Deposition rates as high as 25 A(ring)/s for Mo, 30 A(ring)/s for Ti, and 80 A(ring)/s for C have been obtained. The structure of the ion source and the experimental results will be presented in this paper. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146773
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  • 3
    Electronic Resource
    Electronic Resource
    Low energy solid intense ion beams extracted by electron beam evaporation ion source for material modifications (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 2644-2646 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An investigation to reduce the energy of the solid ion beam extracted from electron beam evaporation ion source for material modifications has been performed. The preliminary results have shown that the beam energy can be reduced to lower than 100 eV by a specially designed extraction system for carbon and nitrogen mixed ion beams. The beam current extracted is up to 30 mA for a small 20 mm extraction diameter ion source. It has been found that the extraction energy can be controlled by adjusting the bias voltage of the sample used for coating and the crucible potential. The extraction capability and the composition of the ion beam can also be controlled by changing the gas flow rate and the input power of the ion source. For carbon nitride films synthesized at low energy by this system, the results have shown to exhibit very high hardness values. The microhardness is over HK 6000 kg/mm2. The principle of this ion source is described. The structure of the ion source, and the experimental results are also described in this article. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148992
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  • 4
    Electronic Resource
    Electronic Resource
    The role of Ta and Pt in segregation within Co-Cr-Ta and Co-Cr-Pt thin film magnetic recording media : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5345-5347 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polarization dependent extended x-ray absorption fine structure (PD-EXAFS) and magnetic circular dichroism (MCD) measurements of CoCrTa and CoCrPt films, sputter deposited at varying substrate temperatures, were performed to investigate the average local structure and chemistry about the Ta, Pt, and Co atoms and the average magnetic moment of the Co and Cr atoms within these films. Results from the MCD measurements indicate the average net magnetic moment of the Cr atoms is opposite in direction and five percent in amplitude relative to the Co moments. Inspection of the Fourier transforms of the XAFS data from these samples shows an increase in structural disorder around the Ta and Pt atoms with increasing substrate deposition temperature. A further comparison between the Ta and Pt edge EXAFS results show that the temperature-dependent increase in structural disorder is greater around the Ta atoms in the CoCrTa system than it is around the Pt atoms in the CoCrPt system. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361372
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  • 5
    Electronic Resource
    Electronic Resource
    Electron Diffraction Patterns of Fibrous and Lamellar Textured Polycrystalline Thin Films. II. Applications (1996)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 29 (1996), S. 419-426 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Electron diffraction patterns of a sputter-deposited poly crystalline MgO thin film on an SiO2 substrate, of a Ta thin film and of CoCrTa/Cr bilayer films on glass substrates are presented and analyzed based on the theory developed in Paper I [Tang & Laughlin (1996). J. Appl. Cryst. 29, 411–418]. It is found that the MgO film is [001] textured with a distribution angle of 13°. The Ta film is composed both of randomly oriented grains and [011] textured grains. The [011] texture axis distribution angle of the Ta film is determined to be 11° (11{\bar 2}O)CoCrTa/(001)Cr and (10{\bar 1}1)CoCrTa/(011)Cr polycrystalline epitaxy are identified in the CoCrTa/Cr bilayer films. Both the bilayer films have a texture axis distribution angle of 6°.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889896000416
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