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  • American Institute of Physics (AIP)  (20)
  • Institute of Physics  (10)
  • Inter-Research  (1)
  • 1995-1999  (31)
  • 1975-1979
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  • 1
    Electronic Resource
    Electronic Resource
    Doping effect of viologen on photoconductive device made of poly (p-phenylenevinylene) (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2871-2873 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the photovoltaic properties of the donor–acceptor composite system of poly (p-phenylenevinylene) (PPV) and viologen. We observed the significant enhancement of photocurrent with increasing the doping ratio of viologen. The maximum photocurrent of viologen-doped PPV was nine times as high as that of the pristine PPV. The maximum quantum yield and photosensitivity are 13% (electron/photon) and 0.05 A/W, respectively, at low bias voltage (−2 V). The increase of photocurrent is explained with the efficient charge separation that resulted from the transfer of photoexcited electrons from PPV to viologen. The mixture of PPV and viologen can be used as a sensitive photodiode material. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121486
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  • 2
    Electronic Resource
    Electronic Resource
    Reaction network reduction for distributed systems by model training in lumped reactors: Application to bifurcations in combustion (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Chaos 9 (1999), S. 95-107 
    Details
    ISSN: 1089-7682
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new methodology is presented to derive reduced reaction mechanisms for distributed reacting flows by model training in a lumped parameter system (a continuous-stirred tank reactor). The method identifies the relevant transport time scales in the reaction zone of a distributed system along with the local composition vector, over a range of operation conditions. A training box in the parameter space of pressure-transport time scale-composition is then identified. Sensitivity and principal component analyses are subsequently performed at bifurcation points in a lumped parameter system at representative conditions of the training box. The most inclusive chemistry derived in the lumped system captures the proper transport–chemistry coupling and is suitable for the distributed reactor. Application to ignition of hydrogen/air and methane/air mixtures is presented and validated for premixed and diffusion flames in a stagnation flow geometry. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.166383
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  • 3
    Electronic Resource
    Electronic Resource
    Simple technique for the simultaneous measurements of the four-probe resistivity and the thermoelectric power (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 3705-3706 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We propose simple configurations to measure the thermoelectric power and the four-probe resistivity simultaneously for different types of samples.© 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149164
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  • 4
    Electronic Resource
    Electronic Resource
    PLS bending magnet x-ray beamline 3C2 : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1722-1724 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The design of the 3C2 beamline at the Pohang Light Source (PLS) is described. The beamline is designed for x-ray scattering studies with x-ray photons over an energy range of 4–12 keV. A cylindrical Pt-coated silicon mirror intercepts a photon beam up to 3 mrad at a distance of 16 m from a source point and focuses the beam sagittally at the sample position with a magnification of 1:1. For the vertical focusing it will be dynamically bent by the mirror holder. A double-crystal monochromator of two Si(111) crystals with a fixed-exit beam geometry provides monochromatic photons and is located in front of the experimental hutch to reduce the motion of the beam position. The hutch is equipped with a four-circle diffractometer and various photon detection electronics for x-ray scattering experiments. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146463
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  • 5
    Electronic Resource
    Electronic Resource
    Nonswitching van der Pauw technique using two different modulating frequencies (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 2177-2178 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present a nonswitching van der Pauw technique using two independent ac current sources and two lock-in amplifiers. This technique may be useful to measure the resistance of delicate samples that might be easily damaged by electric shocks induced from switching, and can be extended to measure the anisotropy of resistance. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149738
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  • 6
    Electronic Resource
    Electronic Resource
    Reinvestigation and extension of the steady-state Nyquist theorem for multi-terminal semiconductor devices and its application to minimum noise figure in microwave field effect transistors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 228-241 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The steady-state Nyquist theorem for multi-terminal semiconductor devices, which describes the short-circuit thermal noise currents in arbitrarily shaped multi-terminal semiconductor devices, is reinvestigated. The concept of the equipotential surfaces for small ac signals is found to be wrong, which forces us to introduce a new approach to find the equipotential surfaces for noise voltages. Using this new approach, we rederive the steady-state Nyquist theorem with the same results as in the previous derivation, and extend it to the hot carrier regime. Using the extended theorem, we express the minimum noise figure for microwave field effect transistors as a function of the measurable device parameters with no fitting constant. The derived minimum noise figure is shown to reduce to a simple form, which can also be used as an empirical relation with one fitting constant. This simple form can explain the experimental results very well in wide frequency ranges, and gives through a clear mathematical relation the empirically known requirements for the low noise design of microwave field effect transistors. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360936
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  • 7
    Electronic Resource
    Electronic Resource
    Galvanomagnetic properties and magnetic domain structure of epitaxial MnAs films on GaAs(001) : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4967-4969 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial MnAs films on GaAs(001) in the thickness range 20–200 nm were studied. Using ordinary and extraordinary Hall effect data to determine the field required for perpendicular saturation and saturation magnetizations reported elsewhere, we determined the shape anisotropy constant in the basal plane of the hexagonal structure to be 3.7(0.6)×105 erg/cm3 and the surface anisotropy constant to be −1.3(0.4) erg/cm2. The negative sign indicates thin enough films will be perpendicularly magnetized. By magnetic force microscopy of a 100 nm film we found stripe domains with 180° Bloch walls, thereby avoiding the hard c axis. The widths of the domains and the walls are 4.0(0.3) μm and 95(6) nm, respectively. In magnetoresistance, we observed behavior similar to other ferromagnets, namely peaks centered around the positive and negative coercive fields, and at fields beyond the coercive field a linear dependence on magnetic field. The electrical resistance showed rapid increase with temperature beginning about 5° below the Curie temperature (40 °C) caused by the change in crystal structure from hexagonal to orthorhombic. The resistivities are, respectively, 300(24) and 375(30) μΩ cm. Comparison with bulk values indicates the large lower temperature value is partly due to the presence of some orthorhombic phase observed in x-ray studies. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361605
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  • 8
    Electronic Resource
    Electronic Resource
    Deep-center oxygen-related photoluminescence in GaAs doped with dimethylaluminum methoxide during organometallic vapor phase epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2015-2021 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared oxygen-related photoluminescence measurements of GaAs epilayers grown by organometallic vapor phase epitaxy (OMVPE) and intentionally doped with dimethylaluminum methoxide (DMALMO) are reported. The photoluminescence emissions at 1.08, 0.95, 0.81, and 0.62 eV are detected. The centers responsible for the emissions at 0.81 and 0.62 eV are tentatively attributed to Al–O–Ga and Al–O–Al, respectively, based on correlation with layer growth conditions. The growth parameters lead to information on the number of nearest-neighbor aluminum associated with oxygen. The Al–O–Ga center responsible for the 0.81 emission is also studied for AlxGa1−xAs(x=0.05–0.9) layers grown by OMVPE without DMALMO. The 0.81 eV emission is attributed to the transition from the conduction band to the Al–O–Ga center. The center shows the lattice relaxation exemplified by the Franck–Condon shift of 0.15 eV. The thermal ionization energy of this acceptor is determined to be 0.56 eV above the valence band. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360177
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  • 9
    Electronic Resource
    Electronic Resource
    Fabrication of nanometer-sized magnetic structures using e-beam patterned deposition masks : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4717-4719 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the development of a novel technique designed to study dimensional effects in sputter-deposited magnetic materials and multilayer nanostructures without the need for post-deposition patterning. Wires with widths ranging from 40 to 1000 nm have been deposited on Si wafer substrates through a deposition mask fabricated by e-beam lithography. A bilevel resist masking scheme allows smooth, near vertical sidewall profiles, and the resulting structures can be exposed using a simple lift-off process. This process was used to fabricate test structures of Fe, Cu, and Co which were characterized by scanning electron microscopy, atomic force microscopy, and ac resistivity measurements from 3 to 300 K. While the wire structures are geometrically well defined, transport measurements reveal high crystalline defect densities which must be eliminated to fabricate low-dimensional magnetoresistive structures. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365538
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  • 10
    Electronic Resource
    Electronic Resource
    Deposition of high-quality NiMnSb magnetic thin films at moderate temperatures (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2740-2744 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of the ferromagnetic Heusler alloy NiMnSb, of interest for magnetic multilayer devices because of their predicted half-metallic (i.e., 100% spin-polarized) transport properties, have been successfully deposited by rf magnetron sputtering from a single composite target. A novel combination of low argon gas pressure, low deposition rates, and moderate substrate temperatures (250–350 °C) are shown to result in high-quality, low-roughness polycrystalline films of the C1b-type crystal structure, with thicknesses as low as 100 Å, without the need for any post-deposition annealing. The structural properties of these films, determined by x-ray diffraction and atomic force microscopy are presented as a function of deposition conditions. The magnetic properties and resistivity are consistent with bulk MiMnSb, which suggests that they will be effective as spin-polarized conducting layers in multilayer thin-film structures. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363977
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