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  • American Institute of Physics (AIP)  (14)
  • Springer Nature  (4)
  • 1995-1999  (15)
  • 1975-1979  (1)
  • 1970-1974  (2)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4737-4740 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selectively red shifting the photoresponse of intersubband GaAs/Al0.25Ga0.75As multiple-quantum-well (MQW) infrared photodetectors (QWIPs) by furnace and rapid thermal annealing is explored. Selective interdiffusion of the MQW is achieved by dielectric encapsulating (SiO2 or Si3N4) the surface. The high dark current of annealed QWIPs is attributed to dopant out-diffusion from the QWs into the barriers. Declining responsivities result from reduced carrier density in the QW and a red shift of the intersubband transition energy. In this work, the intersubband energy is determined by the Fourier synthesis model and compared with experimental results (further confirming the interdiffusion mechanism). Minimal dark current and responsivity degradation is observed for Si3N4-encapsulated QWIPs red shifted by 1 μm © 1996 American Institute of Physics.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1171-1177 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tin-modified lead zirconate titanate thin layers were prepared by a sol-gel method. A room- temperature antiferroelectric (AFE) phase composition Pb0.99Nb0.02[(Zr0.58Sn0.42)0.96Ti0.04] 0.98O3 was prepared and examined for weak- and high-field dielectric properties as a function of temperature, with emphasis on field-induced AFE-ferroelectric (FE) switching characteristics. Thin layers processed with a lead oxide cover coat were found to be free of any secondary phases and showed improved properties. Room-temperature values of dielectric constant K'=390 and saturation polarization Ps=20 μC/cm2 were obtained with field-induced strains up to 0.15% in submicron grain structures. © 1995 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7396-7408 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Based on previously developed melt processing methods, Y2BaCuO5 (211) precipitates with various size were obtained in YBa2Cu3Ox (123). In particular, a wide distribution of 211 size from 100 Å to 10 μm has been found to exist in the matrix of 123, and strongly effected the critical current density, Jc. An enhancement of Jc was always found to be associated with the presence of extremely fine 211 precipitates. The flux pinning by these precipitates can be understood by considering the interaction of flux lines with cavities. It was found that although the flux lines are strongly pinned by cavities, the effectiveness decreases with the increasing number of flux lines trapped by them. © 1997 American Institute of Physics.
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, a recently developed full-wave electromagnetic analysis technique is applied to the simulation of two-dimensional finite quasi-random gratings for quantum well infrared photodetectors. This steepest descent fast multipole method is a mathematically rigorous technique that permits the rapid and accurate solution of the electric field integral equation governing scattering from a quasi-planar structure. In the present application, it enables the efficient and accurate simulation of scattering by finite two-dimensional grating structures interfacing with GaAs. Grating absorption is predicted by evaluating the scattered optical electric field component at the device layer along the growth direction. Numerical examples illustrating the functional dependence of the absorption on grating parameters and wavelength are discussed. The simulation approach presented here should prove to be a useful tool for the a priori design of novel aperiodic, quasi-random and rough surface two-dimensional gratings for infrared imaging applications. © 1998 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2291-2296 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stress development in thin layers of lead titanate prepared by sol-gel processing was monitored by in situ laser reflectance measurements. Layers were spin coated onto silicon substrates and thermally cycled to 500 °C. The shrinkage normal to the rigid substrate was determined by in situ ellipsometry. Changes that occurred on drying and firing, which related to densification and stress development, are reported. The observed changes were explained in terms of evaporation and solvent/polymeric network interactions at lower temperatures, and thermal expansion mismatch between the substrate and the coating after formation of the dense oxide. Crystallization into the perovskite structure occurred only in thicker or multideposited coatings, altering the state of stress from tensile, to progressively more compressive, on cooling. The importance of the choice of substrate material, deposition method and heat treatment conditions, in relation to stress development and dependent electrical properties, are discussed. © 1998 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 3949-3954 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Positive temperature coefficient (PTC) thermistor sensors have been used successfully for sensing and measurement of gas flow through a tube. Tuned detection technique using an ac signal is found to be a more efficient measuring circuit than the conventional dc Wheatstone bridge. Any particular sensor can be used to measure a wide range of flow rates using sensing heads of varying geometries. For a specific geometry, the plot of electrical voltage output against flow rate produces an "S" shaped curve which follows from the basic principles of heat transfer by both conduction and convection mechanisms. © 1999 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 5559-5562 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present an improved design for far-infrared (FIR) circular polarizers used in a lightpipe transmission system for magneto-optical experiments. A peak efficiency of nearly 100% is achieved for FIR laser radiation by reducing the multiple reflections within the polarizer system, as well as scattering from the walls of the lightpipe. Broadband low-resolution measurements are less susceptible to errors due to multiple reflections, but incorporation of these improvements is still found to reduce systematic errors due to the reflection from the sample. Also, we have measured the low temperature index of refraction of quartz and find significant disagreement with published values for frequencies below 100 cm−1. © 1995 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3573-3575 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of laser annealing on important detector characteristics such as dark current, spectral response, and absolute responsivity is investigated for bound-to-continuum GaAs/AlGaAs quantum-well infrared photodetectors (QWIPs) operating in the 8–12 μm wavelength regime. A set of experiments was conducted on QWIPs fabricated from both as-grown and laser-annealed multiple-quantum-well structures. Compared to the as-grown structure, the peak spectral response of the laser-annealed structure was shifted to longer wavelengths, though absolute responsivity was decreased by about a factor of two. In addition, over a wide range of bias levels, the laser-annealed QWIPs exhibited a slightly lower dark current compared to the as-grown QWIPs. Thus, the postgrowth control of GaAs/AlGaAs quantum-well composition profiles by laser annealing offers unique opportunities to fine tune various aspects of a QWIP's response. © 1997 American Institute of Physics.
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  • 9
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lattice-matched InGaAs/InP quantum well intersubband photodetectors (QWIPs) have been grown on an InP substrate by gas source molecular beam epitaxy. Detection at 4.55 μm was observed for a narrow well p-type InGaAs QWIP which, when complimented by a high responsivity 8.93 μm n-type InGaAs/InP QWIP, demonstrates the possibility of dual band, monolithically integrated QWIPs on the same InP substrate. Theoretical calculations of the photocurrent spectra are in excellent agreement with the experimental data. © 1996 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2427-2429 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A very long wavelength broadband infrared detector, sensitive over a 10–16 μm spectral range, based on GaAs/AlxGa1−xAs quantum wells grown by molecular beam epitaxy, has been demonstrated. Wavelength broadening of Δλ/λp∼42% is observed to be about a 400% increase compared to a typical bound-to-quasibound quantum well infrared photodetector (QWIP). In this device structure, which is different from typical QWIP device structures, two different gain mechanisms associated with photocurrent electrons and dark current electrons were observed and explained. Even with broader response, D*∼1×1010 cmHz/W at T=55 K is comparable to regular QWIPs with similar cutoff wavelengths. © 1998 American Institute of Physics.
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