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  • 1
    Electronic Resource
    Electronic Resource
    Ion-exchanged Fe doped KTiOPO4 optical waveguides (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3118-3120 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Planar and channel waveguides were fabricated in Fe doped KTiOPO4 (KTP) using the Rb+:K+ ion-exchange process. These waveguides were characterized optically. It was found that the index change is smaller than that obtained using undoped KTP substrates. However, the diffusion depth is larger. The Fe ions appear to be an effective means to modify the properties of ion-exchanged KTP waveguides. The photorefractive effect (PRE) in Fe doped KTP channel waveguides was also investigated at wavelengths of 0.543, 0.6328, and 0.83 μm. PRE was not observed, indicating that unlike that in LiNbO3 or KNbO3, Fe ion is not a major contributing factor in KTP. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363123
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  • 2
    Electronic Resource
    Electronic Resource
    Finite-element stress analysis of failure mechanisms in a multilevel metallization structure (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3037-3041 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A finite-element method taking into account material nonlinearity was used to calculate the stress distribution in interconnecting lines and studs of a three-dimensional multilevel metallization structure in a microelectronic device. A good correlation was obtained between the location of calculated stress concentration centers and the experimentally observed void sites in the stud. Accordingly, the failure mechanisms of the stress-induced voiding in the stud and the crack formation in the underlying substrate were inferred to be associated with different stress components. Furthermore, the stress concentration centers were found to migrate as the temperature changes, which agrees with the experimental observations. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358653
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  • 3
    Electronic Resource
    Electronic Resource
    Erratum: "Epitaxial growth of RbTiOPO4 films on KTiOPO4 substrates by excimer laser ablation technique'' [J. Appl. Phys. 76, 8215 (1994)] (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5487-5487 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359608
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  • 4
    Electronic Resource
    Electronic Resource
    Growth and photorefractive properties of Mn-doped (KNa)0.1(Sr0.6Ba0.4)0.9Nb2O6 crystals (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8835-8837 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: (KNa)0.1(Sr0.6Ba0.4)0.9Nb2O6, or KNSBN, crystals have been grown with two different Mn concentrations: 0.02 wt % and 0.04 wt %. Two-wave mixing and self-pumped phase conjugation experiments were carried out on these crystals at 632.8 nm wavelength. The measured two-wave coupling gains for the 0.02 wt % and 0.04 wt % crystals are larger than 7 cm−1 and 9 cm−1, respectively, and the two-wave coupling time response is faster for the 0.4 wt % crystal. In addition, the self-pumped phase conjugation reflectivity of the 0.04 wt % crystal is measured to be as high as 70%. It is shown that the Mn dopant can increase effectively the absorption coefficient and enhance the photorefractive properties of KNSBN. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362561
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  • 5
    Electronic Resource
    Electronic Resource
    Study of photoresponse of high-Tc Y-Ba-Cu-O superconducting ultrathin films using a picosecond laser pulse train (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2830-2832 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have systematically studied the photoresponse of Y-Ba-Cu-O (YBCO) ultrathin films to a train of picosecond laser pulses. The onset and decay of nonequilibrium superconductivity due to different levels of optical excitation can be observed within the single pulse train. Thermal and nonthermal responses can be clearly identified. In addition, the superconducting film resistance was found to increase progressively with laser power above the onset threshold. The YBCO thin films were possibly excited into a nonequilibrium intermediate (resistive) state from the superconducting state. The laser intensity dependence indicated a nonthermal origin for these voltage pulses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110301
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  • 6
    Electronic Resource
    Electronic Resource
    Femtosecond reflectivity of 60 K Y-Ba-Cu-O thin films (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1150-1152 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report systematic studies of the femtosecond transient reflectivity at 2 eV in partially oxygen-depleted Y-Ba-Cu-O thin films exhibiting the resistive superconducting transition at 60 K. Our measurements, performed at room temperature, reveal that in 60 K films, the Fermi level in the Cu-O2 plane lies approximately 2 eV above the filled copper d9/d10 band. By mapping the transient optical response across a 1 cm2 film, we show that the position of the Fermi level is very sensitive to the apparent local variations of the film oxygen content, which gives rise to dramatically different transient optical responses. We also observe a strong transient reflectivity dependence on intensity, which can be attributed to the shift of the Fermi level caused by nonequilibrium hole heating.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110835
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  • 7
    Electronic Resource
    Electronic Resource
    Finite-element modeling of stress distribution and migration in interconnecting studs of a three-dimensional multilevel device structure (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1516-1518 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A finite-element method taking into account plasticity and temperature-dependent properties of materials was used to calculate the stress distribution in interconnecting studs of a three-dimensional multilevel device structure. A good correlation between the calculated locations of stress concentration and the experimentally observed failure sites was obtained. On the basis of this, the failure mechanisms associated with different stress components were inferred. In addition, the calculated locations of stress concentration were found to migrate as temperature changed. The phenomenon was also observed experimentally.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112029
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  • 8
    Electronic Resource
    Electronic Resource
    Laser deposition of CdS/Y-Ba-Cu-O heterostructures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1377-1379 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulsed laser deposition was used to grow high-quality Y-Ba-Cu-O (YBCO) and CdS thin films sequentially on MgO. A temperature window between 200 and 250 °C was found to be suitable for the deposition of CdS on YBCO. The transition temperature of the heterostructure was measured to be 72 K while the single YBCO film had a Tc of 85 K. The degradation was determined to be due to interface reaction, rather than the result of poor deposition conditions. X-ray measurements indicated that the CdS film was hexagonal and c-axis oriented. In situ resistivity measurement was used to monitor the film growth dynamics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105314
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  • 9
    Electronic Resource
    Electronic Resource
    Study on photorefractive effect in KTiOPO4 waveguides (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2539-2541 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photorefractive effects (PRE) in KTiOPO4 channel waveguides were studied at the wavelengths 0.633 and 0.83 μm. The 4 μm-wide waveguides were fabricated by Rb ion exchange on the z-face of the crystals and along the y axis. At 0.633 μm, crystals from one source showed conventional photorefractive response with a saturation index change Δn of 2×10−5, but samples from a different source were not photorefractive. Neither type of crystals displayed photorefractive behavior in response to 0.83 μm light at guided-wave power flow of 2.4×107 W/m2. Differences in bicrystal structure are suggested as a possible cause of differing PRE between the two samples. On crystals from the first source, the relaxation time of generating PRE is related to power flow of the irradiating beam. The relaxation time of PRE disappearance after stop irradiation is also related to power flow of the irradiating light. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112628
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  • 10
    Electronic Resource
    Electronic Resource
    Epitaxial growth of optical Ba2NaNb5O15 waveguide film by pulsed laser deposition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1995-1997 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The waveguiding Ba2NaNb5O15 films have been prepared on KTiOPO4 substrates by pulsed laser deposition technique. Characterizations of the as-grown films by the x-ray θ–2θ scan and β scan and the scanning electron microscopy revealed that epitaxial (110)-oriented Ba2NaNb5O15 films with small surface roughness were achieved on (100)-oriented KTiOPO4 plates. The x-ray photoelectron spectrometer was employed to probe the chemical constitution of the as-grown films. Favorable optical waveguiding properties were demonstrated by m-line measurement and evaluation of propagation loss on the order of 1.0 dB/cm of TM and TE multimodes. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112841
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