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  • 1
    Electronic Resource
    Electronic Resource
    Observations of higher-order laser-induced surface ripples on 〈111〉 germanium (1983)
    Springer
    Applied physics 32 (1983), S. 135-140 
    Details
    ISSN: 1432-0630
    Keywords: 42.65 ; 64.60 ; 78.90 ; 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We report the observation and analysis of higher-order optical diffraction patterns arising from linear combinations of the primary laser-induced gratings or ripples on germanium surfaces. These higher-order surface structures presumably arise from nonlinear interactions between superimposed primary gratings with different grating wave vectors. For gratings produced by normally incident laser beams on Ge 〈111〉 surfaces, the diffraction patterns exhibit a strongly hexagonal symmetry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616609
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  • 2
    Electronic Resource
    Electronic Resource
    Carrier transport in porous silicon light-emitting devices (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 295-300 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work presents a comprehensive investigation of carrier transport properties in light-emitting porous silicon (LEPSi) devices. Models that explain the electrical characteristics and the electroluminescence properties of the LEPSi devices are developed. In metal/LEPSi devices, the forward current density–voltage (J–V) behavior follows a power law relationship (J∼Vm), which indicates a space charge current attributed to the carriers drifting through the high resistivity LEPSi layer. In LEPSi pn junction devices, the forward J–V behavior follows an exponential relationship (J∼eeV/nkT), which indicates that the diffusion of carriers makes a major contribution to the total current. The temperature dependence of the J–V characteristics, the frequency dependence of the capacitance–voltage characteristics, and the frequency dependence of the electroluminescence intensity support the models. Analysis of devices fabricated with a LEPSi layer of 80% porosity results in a relative permittivity of ∼3.3, a carrier mobility of ∼10−4 cm2/V s, and a free carrier concentration of ∼1013 cm−3. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362783
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  • 3
    Electronic Resource
    Electronic Resource
    Ordering and self-organization in nanocrystalline silicon (2000)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 407 (2000), S. 358-361 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The spontaneous formation of organized nanocrystals in semiconductors has been observed during heteroepitaxial growth and chemical synthesis. The ability to fabricate size-controlled silicon nanocrystals encapsulated by insulating SiO2 would be of significant interest to the ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/35030062
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  • 4
    Electronic Resource
    Electronic Resource
    Silicon-based visible light-emitting devices integrated into microelectronic circuits (1996)
    [s.l.] : Nature Publishing Group
    Nature 384 (1996), S. 338-341 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] FIG. I/A, Micrograph of an integrated LED/bipolar-transistor structure (A, a) along with the cross-section (A, b) and equivalent circuit (A, c). The LED is in the centre of the structure, and has a 400-jim-diameter active light-emitting area. The micrograph shows (centre) a crosshatched aluminum ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/384338a0
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  • 5
    Electronic Resource
    Electronic Resource
    Femtosecond reflectivity of 60 K Y-Ba-Cu-O thin films (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1150-1152 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report systematic studies of the femtosecond transient reflectivity at 2 eV in partially oxygen-depleted Y-Ba-Cu-O thin films exhibiting the resistive superconducting transition at 60 K. Our measurements, performed at room temperature, reveal that in 60 K films, the Fermi level in the Cu-O2 plane lies approximately 2 eV above the filled copper d9/d10 band. By mapping the transient optical response across a 1 cm2 film, we show that the position of the Fermi level is very sensitive to the apparent local variations of the film oxygen content, which gives rise to dramatically different transient optical responses. We also observe a strong transient reflectivity dependence on intensity, which can be attributed to the shift of the Fermi level caused by nonequilibrium hole heating.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110835
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  • 6
    Electronic Resource
    Electronic Resource
    Properties of p+ microcrystalline films of SiC:H deposited by conventional rf glow discharge (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2672-2674 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a conventional rf glow discharge, we have grown microcrystalline p+ SiC:H films having conductivities 2–2×10−3 (Ω cm)−1 and activation energies 0.05–0.1 eV with carbon concentrations 0–6 at. %, respectively. Increasing the carbon content suppresses the microcrystallinity. The choice of substrate is crucial to initiating the immediate onset of microcrystalline growth in thin (∼200–400 A(ring)) films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100193
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  • 7
    Electronic Resource
    Electronic Resource
    Optical and electronic properties of an amorphous silicon-germanium alloy with a 1.28 eV optical gap (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 477-479 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the deposition and comprehensive evaluation of a hydrogenated, fluorinated amorphous silicon-germanium alloy with an optical gap of 1.28 eV. This low-gap alloy of the a-Si, Ge system possesses a small midgap defect density (6.5×1016 cm−3), and useful electron (σph/σd=23) and hole (LD=0.13 μm) transport properties. The alloy was grown by radio-frequency plasma-enhanced decomposition of SiF4, GeF4, and H2 in a reactor built to ultrahigh-vacuum specifications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99449
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  • 8
    Electronic Resource
    Electronic Resource
    Drude parameters of liquid silicon at the melting temperature (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1747-1749 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Drude parameters of liquid silicon at the melting temperature have been obtained from time-resolved reflectivity measurements at 1064, 532, and 355 nm following melting of an optically thick layer by a picosecond visible laser pulse. The ratio of the electron density N to the electron mass m is found to be equal to 2.17×1059 m−3 kg−1 and the relaxation time τ to be equal to 212 as. These values are compared to previous results obtained by cw ellipsometry between 1 and 0.4 μm and by nanosecond time-resolved ellipsometry of 632.8 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98511
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  • 9
    Electronic Resource
    Electronic Resource
    Mechanism of the growth of amorphous and microcrystalline silicon from silicon tetrafluoride and hydrogen (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1757-1760 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the growth of amorphous (a-Si:H,F) and of microcrystalline (μc-Si) silicon over trench patterns in crystalline silicon substrates. We vary the conditions of the SiF4-H2 glow discharge from deposition to etching. All deposited films form lips at the trench mouth and are uniformly thick on the trench walls. Therefore, surface diffusion is not important. The results of a Monte Carlo simulation suggest that film growth is governed by a single growth species with a low (∼0.2) sticking coefficient, in combination with a highly reactive etching species.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345600
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  • 10
    Electronic Resource
    Electronic Resource
    Trapping time in processed polycrystalline silicon measured by picosecond time-resolved reflectivity (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2316-2321 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used the methods of picosecond time-resolved reflectivity to measure the carrier lifetime in fine grain polycrystalline silicon films grown by low pressure chemical vapor deposition at 625 °C. After monatomic hydrogen diffusion or implantation with phosphorus ions followed by high temperature annealing (1150 °C), the trapping time τ increased from 40 to 150 ps, consistent with passivation of the grain boundaries or an increase in grain size, respectively. If implantation was not followed by annealing, τ decreased to less than 10 ps, while if it was followed by low temperature annealing (900 °C), which approximately restored the original grain size, τ recovered to 50 ps, very close to the trapping time measured in the as-grown samples. In all cases, we found indications that trapping of carriers was much faster than their subsequent recombination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341047
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