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  • Articles  (37)
  • 1995-1999  (25)
  • 1990-1994  (12)
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  • Articles  (37)
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  • 1
    Electronic Resource
    Electronic Resource
    Nanometer thick Si/SiGe strained-layer superlattices grown by an ultrahigh vacuum/chemical vapor deposition technique (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3441-3445 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality Si/Si1−xGex superlattices having layers as thin as 1.5 nm have been grown by an ultrahigh vacuum/chemical vapor deposition system. High-resolution double-crystal x-ray diffraction, and conventional and high-resolution cross-sectional transmission electron microscopy were used to evaluate the crystalline quality of these superlattices. A dynamical x-ray simulation program was employed to analyze the experimental rocking curves. Excellent matches between experimental rocking curves and simulated ones were obtained for all superlattices with various periodicity. A cross-sectional transmission electron micrograph of an 80 period Si(4.2 nm)/Si0.878Ge0.122 (1.5 nm) superlattice, in which each individual layers was clearly resolved, demonstrated the capability of this growth technique for nanometer thick layer deposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356104
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization of the Si/SiGe heterojunction diode grown by ultrahigh vacuum chemical vapor deposition (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4921-4923 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The unipolar Si/SiGe heterojunction diode grown by ultrahigh vacuum chemical vapor deposition at 550 °C is demonstrated. The dark current density measured at 77 K is (2.5±0.1)×10−7 A/cm2 for the barrier height of 176±8 meV, at a reverse bias of 1 V. The barrier heights are measured from the activation analysis of the saturation current and compared to the theoretical values. The barrier height decreases as the thickness of the SiGe strained layer exceeds the critical thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357206
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  • 3
    Electronic Resource
    Electronic Resource
    The growth and properties of Al and AlN films on GaN(0001)–(1×1) (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 110-119 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth, structure, and annealing behavior of Al films, formed by in situ vapor deposition on GaN(0001)–(1×1) near 25 °C, have been studied using Auger, electron energy loss, x ray and ultraviolet photoemission spectroscopies and low-energy electron diffraction. Film growth occurs by a Stranski–Krastanov process with reaction at the immediate interface leading to metallic Ga. Annealing at (approximately-greater-than)800 °C leads to release of N, which reacts with Al to form a (1×1)-ordered layer of AlN, possibly alloyed with a small amount of Ga. The AlN layer has been characterized using the various spectroscopies, and the work function, band bending, and electron affinity of GaN and of the AlN overlayer have been obtained. The Al/GaN Schottky barrier height has been measured and compared with previous results for Ni/GaN.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360917
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  • 4
    Electronic Resource
    Electronic Resource
    Abruptness of Ge composition at the Si/SiGe interface grown by ultrahigh vacuum chemical vapor deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1092-1094 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model is proposed to estimate the interfacial abruptness of the Si/SiGe heterojunction. In this model, a transition region with linearly graded Ge composition is assumed at the Si/SiGe interface. The Ge composition x of Si/SiGe quantum well grown by ultrahigh vacuum chemical vapor deposition at 550 °C is found to increase with the deposition time as deposition at the same gas phase composition. This phenomenon can be explained by this model and the fitting results match the measured data. The thickness of the transition region and the transition time can be extracted from these fittings. The transition thicknesses are found to be about 1.9 nm or thinner as grown at 550 °C or below. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114471
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  • 5
    Electronic Resource
    Electronic Resource
    Evolution of monolayer terrace topography on (100) GaAs annealed under an arsine/hydrogen ambient (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 143-145 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The topographical evolution of the (100) GaAs surface annealed under an arsine/hydrogen ambient is studied by in situ orientation-resolved light scattering and ex situ atomic force microscopy (AFM). The light scattering system provides real-time monitoring of the magnitude and crystal orientation of topographical features of 0.3 μm scale. The AFM images of the GaAs surface, quenched at various annealing temperatures, vividly depict the randomly oriented high density monolayer steps evolving into an atomically smooth terracelike structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109352
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  • 6
    Electronic Resource
    Electronic Resource
    Detection and quantification of Phytophthora species which are associated with root-rot diseases in European deciduous forests by species-specific polymerase chain reaction (1999)
    Oxford, UK : Blackwell Publishing Ltd
    Forest pathology 29 (1999), S. 0 
    Details
    ISSN: 1439-0329
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Oligonucleotide primers were developed for the polymerase chain reaction (PCR)-based detection of selected Phytophthora species which are known to cause root-rot diseases in European forest trees. The primer pair CITR1/CITR2, complementing both internal transcribed spacer regions of the ribosomal RNA genes, gave a 711 bp amplicon with Phytophthora citricola. The Phytophthora cambivora specific primer pair CAMB3/CAMB4, producing a 1105bp amplicon, as well as the Phytophthora quercina specific primer pair QUERC1/QUERC2, producing a 842 bp amplicon, were derived from randomly amplified polymorphic DNA (RAPD)-fragments presented in this paper. All three primer pairs revealed no undesirable cross-reaction with a diverse test collection of isolates including other Phytophthora species, Pythium, Xerocomus, Hebeloma, Russula, and Armillaria. Under the PCR conditions described the detection of a well discernable amplicon was possible down to 100 pg (P. cambivora), 4pg (P. quercina), and 2pg (P. citricola) target DNA. This diagnostic PCR system was able to detect P. citricola, P. quercina, and P. cambivora in seedlings of pendunculate oak (Quercus robur) and European beech (Fagus sylvatica) which were artificially infected under controlled conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1439-0329.1999.00141.x
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  • 7
    Electronic Resource
    Electronic Resource
    Conformational identification of individual adsorbed molecules with the STM (1997)
    [s.l.] : Nature Publishing Group
    Nature 386 (1997), S. 696-698 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Cu-tetra[3,5 di-f-butylphenyl]porphyrin (Cu-TBPP) belongs to a class of porphyrins with four phenyl-based substituents of symmetrically bound, interconnecting carbon atoms on pyrrole rings (Fig. la). X-ray diffraction has shown that tetraphenylpor-phyrin (TPP) derivatives exhibit dihedral angles of ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/386696a0
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  • 8
    Electronic Resource
    Electronic Resource
    One-dimensional metal structures at decorated steps (1995)
    Springer
    Applied physics 61 (1995), S. 467-474 
    Details
    ISSN: 1432-0630
    Keywords: 73.20.-r ; 73.20.Dx ; 61.16.Ch
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract It is shown how wire structures a few nanometers wide can be fabricated by decorating step edges at vicinal surfaces. Their growth modes and electronic states are studied using Scanning Tunneling Microscopy (STM) and inverse photoemission. The observed growth modes are two-dimensional analogs of Stranski-Krastanov growth and layer-by-layer growth in three dimensions, e.g., for Cu on stepped Mo(1 1 0) and W(1 1 0), respectively. Contrast between different metals is achieved in STM pictures by resonant tunneling via surface states and image states, with the latter providing a map of the work function. The limit of single atomic rows decorating step edges is studied by inverse photoemission, and an energy shift of 0.4 eV is found for electronic states of step atoms. We expect stripe structures to become useful for the study of two- vs one-dimensional magnetism, for magnetoresistive films, and in the design of anisotropic materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01540248
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  • 9
    Electronic Resource
    Electronic Resource
    One-dimensional metal structures at decorated steps (1995)
    Springer
    Applied physics 61 (1995), S. 467-474 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 73.20.-r; 73.20.Dx; 61.16.Ch
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  It is shown how wire structures a few nanometers wide can be fabricated by decorating step edges at vicinal surfaces. Their growth modes and electronic states are studied using Scanning Tunneling Microscopy (STM) and inverse photoemission. The observed growth modes are two-dimensional analogs of Stranski-Krastanov growth and layer-by-layer growth in three dimensions, e.g., for Cu on stepped Mo(1 1 0) and W(1 1 0), respectively. Contrast between different metals is achieved in STM pictures by resonant tunneling via surface states and image states, with the latter providing a map of the work function. The limit of single atomic rows decorating step edges is studied by inverse photoemission, and an energy shift of 0.4 eV is found for electronic states of step atoms. We expect stripe structures to become useful for the study of two- vs one-dimensional magnetism, for magnetoresistive films, and in the design of anisotropic materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01540248
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  • 10
    Electronic Resource
    Electronic Resource
    Quantum confinement effects of Si/SiGe strained-layer superlattices grown by an ultrahigh vacuum/chemical vapor deposition technique (1994)
    Springer
    Journal of materials science 5 (1994), S. 370-374 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Well-resolved band-edge luminescence is observed for Si0.86Ge0.14/Si strained-layer superlattices grown by an ultrahigh vacuum/chemical vapour deposition technique at 550
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00215576
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