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  • Institute of Physics  (426)
  • American Institute of Physics (AIP)  (111)
  • Blackwell Publishing Ltd  (65)
  • 1995-1999  (261)
  • 1990-1994  (260)
  • 1980-1984  (81)
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  • 1
    Electronic Resource
    Electronic Resource
    Effects of the application of magnetic field during rapid solidification on structure and magnetic properties of Mn55Al45 magnetic materials : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6278-6280 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A twin-rolls process for the rapid solidification of metals in a static magnetic field up to 14 kOe has been developed using original composite twin-rolls which are portions of a magnetic circuit. The effects of a magnetic field applied during rapid solidification on the structure and magnetic properties of Mn55Al45 magnetic materials, particularly of the τ single phase materials, have been investigated. The x-ray diffraction technique, optical microscopy, and the hysteresis loop measurement were employed to clarify the effects. It was found that the applied magnetic field decreased the solidification speed and subsequently stabilized the ferromagnetic metastable τ phase in an appropriate rotation rate. In addition, the application of magnetic field led to the increase of the coercivity of the τ single phase materials. This effect is considered to be attributable to the difference in the degree of order of the τ phase in the absence and presence of a magnetic field during rapid solidification.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352669
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical properties of Au/Nb-doped-SrTiO3 contact (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1501-1505 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current-voltage measurements for Au/Nb-doped-SrTiO3 contacts have been performed over a temperature range from 4.2 to 277 K. The forward characteristics above 46 K are well described by the Schottky diode model. The temperature dependence of the parameter E{=[∂log I/∂(qV)]−1} and the saturation current IS show that a thermionic-field emission is dominant in the carrier transport mechanism across contacts above 101 K. It is found that the parameter E is too large compared with an estimated value from the Schottky diode model using a permittivity obtained from the inverse characteristics of capacitance-voltage measurements. We discuss the barrier properties and suggest the possibility of imperfect ionization of the impurity Nb at the surface of the SrTiO3:Nb substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347239
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  • 3
    Electronic Resource
    Electronic Resource
    Midgap states in metalorganic vapor phase epitaxy grown AlxGa1−xAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3394-3400 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of midgap states in n-type AlxGa1−xAs grown by the metalorganic vapor phase epitaxy were investigated by the deep level transient spectroscopy and photocapacitance (PHCAP) techniques. A new PHCAP measurement procedure to avoid interference from the photoionization of the DX center was used. Two near-midgap levels, i.e., a higher lying MH level and a lower lying ML level were detected. As AlAs mole fraction, x, is increased, the energy positions of these two levels became deeper, maintaining a remarkable horizontal alignment with respect to the hybrid orbital energy level. The ML level showed a clear photoquenching for x〈0.3, but the quenching disappeared for x(approximately-greater-than)0.3. No photoquenching of the MH level was observed for all x investigated. Similarity of the photoquenching behavior to GaAs 1−x Px as well as its energy position and optical cross sections led to the conclusion that the ML level is an As-related EL2-like defect. On the other hand, the MH level originates from a defect related to Al.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346344
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  • 4
    Electronic Resource
    Electronic Resource
    Observation of natural oxide growth on silicon facets using an atomic force microscope with current measurement (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 688-691 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Natural oxide growth on silicon facets is observed through an atomic force microscope (AFM) with current measurement. The sample is prepared by means of cleaning and heating a silicon (111) surface with direct electric heating in an ultrahigh vacuum, which creates various facets formed by step bunching. The silicon facets and steps can be observed with the AFM in air. The silicon surface structure and the current distribution can simultaneously be obtained. The results clarify that natural oxide growth on a few special high-index-orientation silicon facets is smaller than that on the other silicon facets ({111}, {110}, {100}, etc.).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351854
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  • 5
    Electronic Resource
    Electronic Resource
    Electrical conduction in polyaniline compressed pellets doped with alkylbenzenesulfonic acids (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5702-5705 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Anion dependent processes of the electrical conduction in chemically prepared polyaniline compressed pellets doped with alkylbenzenesulfonate anion of alkyl chain length 1, 8, and 12 have been investigated by the measurement of the temperature dependence of the conductivity. The conductivity of the samples changes with the temperature as T−1/2, which shows the conduction followed a one dimensional variable range hopping process. With the increase of the alkyl chain length of the dopant anion, the conductivity of the heavily doped 50 mol % sample decreases in whole temperature range, but an exponential factor of the variable range hopping remains unchanged. The results concerning the alkyl chain length of the dopant anion have been discussed from the "quasi-one dimensional'' variable range hopping mechanism and demonstrated the decrease of the transverse localization length and the interchain transfer integral of electron.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351921
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  • 6
    Electronic Resource
    Electronic Resource
    Bonding properties of glow-discharge polycrystalline and amorphous Si-C films studied by x-ray diffraction and x-ray photoelectron spectroscopy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5395-5400 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline and amorphous Si-C films were prepared by rf glow-discharge decomposition of silane-methane mixtures at 700 °C. We have demonstrated that polycrystalline SiC films with large grains grow under heavy hydrogen dilution. The bonding properties as a function of film composition and hydrogen dilution were characterized by means of x-ray diffraction and x-ray photoelectron spectroscopy. Crystallization takes place at around C content x=0.5 in Si1−xCx, accompanying some segregation of carbon atoms in grain boundaries, as a result of a preference for heteronuclear bonds. It was shown that C-C(C3−nSin) (n=0–3) bonds appear in the carbidic phase of C-rich films, leading to occurrence of compressive strain in the crystalline SiC grains. In addition, effects of hydrogen dilution were discussed in correlation with the strain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350561
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  • 7
    Electronic Resource
    Electronic Resource
    Magnetic properties of the intermetallic compounds MM'X(M=Cr,Mn, M'=Ru,Rh,Pd, and X=P,As) : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4639-4641 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetization, magnetic susceptibility, and crystal structure are investigated on the ternary chromium arsenides CrM'As (M'=Ru,Rh,Pd) and ternary manganese phosphides and arsenides MnM'P(M'=Rh,Pd) and MnM'As(M'=Ru,Pd). MnRhP, MnRuAs, and MnPdAs are ferromagnets with a Curie temperature of Tc=401, 496, and 210 K, respectively. CrRhAs is an antiferromagnet with a Néel temperature of TN=165 K. MnPdP and CrPdAs show spin-glass-like freezing. A magnetic order-order transition is observed for CrRuAs. Susceptibility χ versus temperature curves are well expressed by a formula χ =C'/(T − θ'P)γ for all present compounds. The values of γ are about 3/2 for manganese compounds and CrPdAs, and about 1/2 for CrRuAs and CrRhAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348281
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  • 8
    Electronic Resource
    Electronic Resource
    Variation of deep electron traps created by γ irradiation of GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4598-4603 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of γ irradiation on deep electron states in liquid encapsulated Czochralski (LEC) grown GaAs has been investigated by deep-level transient spectroscopy (DLTS) and photocapacitance measurements. With γ rays of 2×108 R, EL6 was reduced in concentration by a factor of 3–5, whereas EL3 was increased about one order of magnitude, as compared with those in as-grown material. In addition to E traps that were previously reported in electron-irradiated material, two new traps were observed near the surface region. From their concentration profiles and annealing behavior, the new traps were most likely created by the interaction of the primary irradiation-induced defects with the grown-in defects. In contrast to these results, neither the DLTS spectrum nor the metastable behavior of EL2 was affected by γ irradiation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346168
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  • 9
    Electronic Resource
    Electronic Resource
    Relationship between the stress and bonding properties of amorphous SiNx:H films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5676-5681 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous SiNx:H (a-SiNx:H) films were deposited at 300 °C on single-crystal Si and fused quartz substrates using SiH4-NH3 mixtures. The stress and vibrational absorption were investigated as a function of the N content x. Increased tensile stress subsequent to a reduction in the compressive stress with increasing x was observed. From the values of stress determined for films on two different substrates, values of Y/(1−ν) for a-SiNx:H films were estimated, where Y is Young's modulus and ν the Poisson ratio. The values of Y/(1−ν) rapidly decreased with an increase in x, from 4.2×1012 dyn/cm2 for a-Si:H films to about 2.5×1011 dyn/cm2 for a-SiNx:H films having x above 1.0. It was found that the measured tensile stress in a-SiNx:H films for high x above 1.0 was caused by the intrinsic stress, and that incorporated NH bonds act to relax the intrinsic stress. These results were discussed in terms of the change in the bonding configuration as a function of x, based on a modified random bonding model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351917
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  • 10
    Electronic Resource
    Electronic Resource
    Relationship between electrical properties and structure in uniaxially oriented polycrystalline silicon films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1462-1468 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Undoped polycrystalline Si (poly-Si) films were prepared on a fused quartz substrate as a function of the rf power (0–30 W) and deposition temperature (620–770 °C) by a plasma-enhanced chemical vapor deposition method. The preferential orientation to a random, 〈100〉 or 〈110〉 crystal axis can be selected by changing some of these preparation conditions. Electron spin resonance (ESR) and the dependence of the dark conductivity σd on the measurement temperature T have been investigated to examine how the structure of the grain boundary depends on the preferential orientation (P.O.) and affects the electrical properties. An enhancement in the degree of P.O. is found to lead to a reduction in the local ESR spin density within the boundary region and g factor. Also, for the films with a random or weak P.O., σd as a function of 1/T exhibits a kink around room temperature, and the conduction in a low-T range is interpreted in terms of the model of variable range hopping within the boundary region. These results and the characteristics of thin-film transistors fabricated on the poly-Si films are discussed in terms of the structural change of the boundary region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351239
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