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  • 1
    Electronic Resource
    Electronic Resource
    Bonding Configuration and Defects in Glow-Discharge Amorphous SiN〈sub〉x〈/sub〉:H Films Deposited at 300°C and 500°C (1993)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 140-142 (Oct. 1993), p. 335-358 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/00/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.140-142.335.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Phosphorus and nitrogen doping into polycrystalline SiC films prepared by plasma-enhanced chemical vapor deposition at 700 °C (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1374-1377 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Doped polycrystalline SiC films were deposited from a SiH4-CH4-H2-(PH3 or N2) mixture by plasma-enhanced chemical vapor deposition at 700 °C. The best crystallinity was obtained at x∼0.53 in Si1−xCx for both undoped and doped films. The crystallinity was enhanced by both P and N doping, but deteriorated again under high doping conditions. Also, better crystallinity was obtained by doping with P rather than N. Intrinsic tensile and compressive stresses were observed for P- and N-doped films, respectively. The resistivity and dangling-bond density decreased in correspondence to the enhancement in crystallinity. Origins of the dangling bonds and of a change in the crystallinity were discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351748
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  • 3
    Electronic Resource
    Electronic Resource
    Structure and grain boundary defects of glow-discharge polycrystalline silicon films deposited using disilane (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 357-366 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Undoped polycrystalline Si (poly-Si) films were deposited as a function of the rf power (0–30 W) and deposition temperature Td (600–750 °C) using disilane by a plasma-enhanced chemical vapor deposition (PECVD) method. For comparison, poly-Si films were also deposited using monosilane. The preferential orientation to a random, (100), or (110) texture was able to be selected by changing some of these deposition conditions. It was suggested that the change in the texture is caused by a change in the surface-diffusion coefficient of SiHn adsorbates and by effects of an ion bombardment, rather than by a change in the deposition rate. For PECVD poly-Si films, both the x-ray relative intensity and the crystallinity rapidly decreased with decreasing the film thickness thinner than 0.4 μm. The value of g in the electron spin resonance spectra and that of stress strongly depended on the rf power and the thickness. Further, when a film was annealed in H2 plasma, the value of g shifted from 2.0054 to 2.0043. These results are examined in terms of formation of different types of grain boundary which can be associated with a lattice deformation around the dangling bonds. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359330
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  • 4
    Electronic Resource
    Electronic Resource
    Bonding structure and characteristics of defects of near-stoichiometric silicon nitride films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2896-2903 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous SiNx:H films having nitrogen content x greater than 1.3 were deposited at 300 °C by varying the ammonia-to-monosilane flow-rate ratio RN, using plasma-enhanced chemical- vapor-deposition. The characteristics of defects in the films subjected to UV illumination and anneal treatments were investigated by electron-spin-resonance (ESR) measurements. The paramagnetic Si dangling bonds (DBs) with three N atom neighbors, called the K0 center, were observed for an as-deposited film with RN of 5, and the density was favorably enhanced by exposing the film to UV light or by the UV illumination subsequent to its annealing. The K0 density decreased as the film was annealed at 550 °C after the UV illumination. The mechanisms of creation and disappearance of the K0 centers by the illumination and the annealing, respectively, were interpreted in terms of the potential fluctuation model. The K0 density in as-deposited films decreased with RN, and a new three-line spectrum was observed as RN exceeds 7. Origins of this new spectrum are discussed. The ESR spectra due to N DBs were observed for only the films subjected to the anneal/illumination sequence, and the densities of both N DBs and K0 centers decreased with increasing the annealing time before the illumination. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363142
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  • 5
    Electronic Resource
    Electronic Resource
    Structure and grain boundary defects of recrystallized silicon films prepared from amorphus silicon deposited using disilane (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1938-1947 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure of polycrystalline Si (poly-Si) films, prepared by annealing amorphous Si (a-Si) films deposited using Si2H6, has been investigated by x-ray diffraction (XRD), Raman scattering, transmission electron microscopy (TEM), and electron spin resonance, as functions of deposition conditions, such as deposition temperature Td (450–580 °C) of the a-Si and annealing time under a fixed temperature of 600 °C. A dominant texture of the poly-Si films changed from a 〈100〉 texture for Td below 530 °C to a 〈111〉 for Td above 530 °C, independent of the deposition rate of the a-Si films and of the film thickness. Although the XRD grain size was independent of Td, the TEM grain size increased from 1.0 to 2.5 μm with decreasing Td. It is suggested that the increase in this TEM size is caused by enhanced lateral growth of 〈100〉 grains due to the presence of strain. The spin density Ns and the factor g were found to first increase with the annealing time, and rapidly decreased after the films were crystallized. It is also found that the value of g for the poly-Si films decreased from 2.0051 to 2.0048 with decreasing Td. Furthermore, effects of post-hydrogenation on the poly-Si films with different textures were investigated, and a structural change of the boundary regions in the poly-Si films is discussed in connection with a change in the dominant texture, through the corresponding change in g. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358827
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  • 6
    Electronic Resource
    Electronic Resource
    Effects of active hydrogen on the stress relaxation of amorphous SiNx:H films (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1493-1500 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous SiNx:H (a-SiNx:H) films were deposited at 300 °C by plasma-enhanced chemical vapor deposition using SiH4–NH3–H2 mixtures. The stress, vibrational absorption, buffered HF (BHF) etch rate, and breakdown strength were investigated as a function of the gas volume ratio [H2]/[SiH4](=RH) and rf power. The [NH3]/[SiH4] ratio was maintained at 10, in which nitride films having a near-stoichiometric composition can be obtained. The measured stress for these films was intrinsic stress. It was suggested that the stress is relaxed by forming Si—NH—Si bonds instead of N—Si3 bonds. An increase in both RH and rf power values was found to decrease the stress and BHF etch rate and increase the breakdown strength. A change in the bonding structure with increasing RH and rf power is examined in terms of a thermodynamic equilibrium reaction, and it was suggested that increased H* radicals and/or H+ ions play an active role in relaxing the stress through the structural change.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356384
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  • 7
    Electronic Resource
    Electronic Resource
    Relationship between the stress and bonding properties of amorphous SiNx:H films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5676-5681 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous SiNx:H (a-SiNx:H) films were deposited at 300 °C on single-crystal Si and fused quartz substrates using SiH4-NH3 mixtures. The stress and vibrational absorption were investigated as a function of the N content x. Increased tensile stress subsequent to a reduction in the compressive stress with increasing x was observed. From the values of stress determined for films on two different substrates, values of Y/(1−ν) for a-SiNx:H films were estimated, where Y is Young's modulus and ν the Poisson ratio. The values of Y/(1−ν) rapidly decreased with an increase in x, from 4.2×1012 dyn/cm2 for a-Si:H films to about 2.5×1011 dyn/cm2 for a-SiNx:H films having x above 1.0. It was found that the measured tensile stress in a-SiNx:H films for high x above 1.0 was caused by the intrinsic stress, and that incorporated NH bonds act to relax the intrinsic stress. These results were discussed in terms of the change in the bonding configuration as a function of x, based on a modified random bonding model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351917
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  • 8
    Electronic Resource
    Electronic Resource
    Structural change of polycrystalline silicon films with different deposition temperature (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3844-3849 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline Si films were deposited by changing the deposition temperature (Td=150–750 °C) and film thickness (d=0.05–0.8 μm) using plasma-enhanced chemical vapor deposition. For both the films with Td below 150–250 °C and the films thinner than 0.2 μm with Td=600–650 °C, no crystallization was found. However, the crystallinity for the films with Td=650 °C increased with an increase in d thicker than 0.2 μm. Furthermore, the dominant orientations in thicker films changed in the order of a 〈111〉, 〈110〉, and 〈100〉 texture with increasing Td. It was suggested that less Si dangling bonds in grain boundary regions are formed in strongly uniaxially oriented poly-Si films. Crystallization at a lower Td was strongly influenced by the surface morphology of the substrates, but no crystallization at Td=600–650 °C for films thinner than 0.2 μm may be due to interference among growing grains with different textures, and the crystallization for films thicker than 0.2 μm was suggested to occur as a result of solid-phase crystallization of the underlying 0.2-μm-thick noncrystallized Si layer during film deposition. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369755
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  • 9
    Electronic Resource
    Electronic Resource
    Thermal stability and breakdown strength of carbon-doped SiO2:F films prepared by plasma-enhanced chemical vapor deposition method (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3715-3722 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon-doped SiO2:F films were deposited by changing the CH4 flow rate, [CH4], using a plasma-enhanced chemical vapor deposition technique from SiH4/O2/CF4/CH4 mixtures. The thermal stability for the films deposited with a fixed temperature of 300 °C was investigated through the changes in the dielectric constant (εS), IR spectra and stress with annealing temperature, TA, from 400 to 800 °C. The breakdown strength for films as-deposited were also measured. The addition of carbon to SiO2:F films resulted in the films with low εS (up to 3.0) and high water resistivity. Addition of high [CH4] in the films resulted in stable εS for TA=500 °C or less. The CH4 addition initially decreased the breakdown strength but then increases again. Under the application of sum rule to the analysis of the vibrational absorption, it was suggested that the decrease in εS with [CH4] results from the decrease in the effective dynamic charge of Si–O dipoles along with the direct contribution of Si–F bonds incorporated to SiO2. The decrease in Si–F and Si–O peak frequencies based on the analysis of the charge transfer model suggested an increase in the Si–F and Si–O bond length, in addition to a decrease in the Si–O–Si bond angle. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372406
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  • 10
    Electronic Resource
    Electronic Resource
    Structure of defects in silicon oxynitride films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2598-2605 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous silicon oxynitride (a-SiNxOy) films were deposited at 300 °C using a plasma-enhanced chemical vapor deposition technique, which was carried out with variation in the nitrogen-flow-rate ratio (RN) and the oxygen-flow-rate ratio (RO) to control the nitrogen and oxygen contents, x and y, respectively. Changes in the structural properties and the characteristics of defects in the films were examined based on the electron spin resonance as well as infrared and optical absorption measurements. An increase in either RN or RO was found to decrease the deposition rate, the density of charged or neutral defects, and the randomness of the bonding network. Thus the incorporation of O or N atoms into Si nitride or Si oxide films, respectively, acts to improve the qualities of the insulating films. Furthermore, the nearest N and O atom neighboring to a Si site would be randomly bonded to the Si atom. Our results also showed that N-related dangling bonds, other than so-called K centers, are favorably created after annealing, but that the formation of Si–O bonds in the films makes the formation of such defects difficult. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1343895
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