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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 92 (1988), S. 2978-2981 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 6140-6145 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: p-type fluorinated and hydrogenated amorphous silicon carbide (a-Si:C:F:H) thin films have been prepared by plasma-enhanced chemical vapor deposition, using mixtures of silane (SiH4), methane (CH4), and boron trifluoride (BF3). The influence of preparation conditions on the optical and electrical properties of the films has been systematically studied with the aim of confirming the validity of BF3 to make p-type amorphous silicon carbide alloys and getting a better understanding of this material for its use in the preparation of p-type window layers of amorphous silicon solar cells. It has been found that the use of a low process pressure tends to prevent film growth as a consequence of the combination of a low density of radicals in the plasma and a high probability of desorption of species. High RF-power densities favor the incorporation of relatively large amounts of fluorine and the formation of defects. These two factors determine a poor doping efficiency and film quality. It has been shown that it is possible to prevent optical gap degradation if BF3 is used instead of B2H6. The effect is attributed to the incorporation of fluorine. Optimum dopant-gas concentrations seem to be of the order of 100%, instead of 1% as is the case for B2H6. This is due to the high tightness of the B-F bond. Our best films have an optical gap of 2.1 eV, a conductivity of 2.7×10−7 (Ω cm)−1 and an extended-state conductivity activation energy of 0.49 eV. Such properties make them suitable for their use as p-type window layers for amorphous silicon solar cells.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4618-4621 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of the rf-power density and the silane mass flow rate on the properties and growth rate of glow-discharge amorphous silicon has been investigated. The silane deposition efficiency during the preparation process has been deduced using mass spectrometry. It has been found that this deposition efficiency is correlated with film quality and growth rate. Such a correlation and its dependence on the preparation parameters has allowed to find out a way to make films at increasing growth rates while keeping their properties essentially unchanged. The results are interpreted in terms of selective etching of weakly bonded radicals owing to ion bombardment. The research work undertaken has allowed to obtain intrinsic amorphous silicon of excellent photovoltaic properties with growth rates up to 10 A(ring) s−1.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental characterization of magnetic anisotropy, coercive field, and anisotropy dispersion of sputtered Fe/CoNbZr and Fe/Ag/CoNbZr sandwiches were carried out by transverse biased initial susceptibility (TBIS) measurements with a magneto-optic Kerr effect at both film/air and glass/film interfaces. Three different behaviors have been observed depending on the range of magnetization fluctuation. The results indicate that Fe grains play a fundamental role in the type of the dispersion (long range or short range). The results obtained from the coercive field and from x-ray diffractograms agree with those obtained by TBIS. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3408-3410 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple two-dimensional position-sensitive detector is proposed and initial tests are reported. The device, aimed to be high-energy-radiation resistant and reliable under magnetic fields, is based on a set of small p-i-n amorphous silicon photodiodes acting as pixels sandwiched between two perpendicular strip electrode structures. No thin-film transistors are used. A simplified prototype has been made and tested. The results show that the position of a laser spot on its surface can be deduced from the signals it generates. Further work proposed, includes tests on possible cross talk and behavior under radiation and magnetic fields, as well as the development of methods for accurate position calculation and for appropriate response calibration. © 1996 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1541-1543 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A number of reports have suggested that InGaAs/GaAs (111)B strained layer epitaxy has the prospect of reaching a higher critical layer thickness than that which can be achieved for (001) substrates. This has motivated a study of the relaxation mechanism of InGaAs/GaAs (111)B quantum wells with high In content (0.12〈x〈0.35). Transmission electron microscopy has revealed the existence of a different misfit dislocation (MD) configuration for high In contents (x〉0.25), which, we believe, has not been reported until now. For such compositions, plastic relaxation takes place through a polygonal network of MDs, which have Burgers vectors in the interface plane. The origin of this network is an unusual dislocation source that occurs through the formation of a three-pointed star-shaped configuration. The characteristics of this misfit dislocation network, which has a higher misfit relieving component and a glide plane coincident with the interface plane, imply a reduction of the previous critical layer thickness estimates for high In content InGaAs/GaAs (111)B heterostructures. However, we observe that none of the (111)B samples shows evidence of a transition to a three-dimensional growth mode, which represents a significant advantage compared to the behavior of high In content quantum wells on (001) substrates. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 96 (1992), S. 4598-4602 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7031-7033 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using infrared (IR) absorption measurements, it is proposed that amorphous hydrogenated silicon films obtained from plasma-enhanced chemical vapor deposition of Silane (SiH4 ) highly diluted in helium at high rf-power densities, consist of an amorphous tissue in which a columnar microstructure is embedded. The evolution of the IR spectrum with dilution evidences a remarkable tendency to the substitution of monohydrides by dihydrides. The films show high transparency and good conductivity. These properties make them suitable to be used as window layers for thin-film solar cells when conveniently doped.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science, Ltd
    Plant, cell & environment 25 (2002), S. 0 
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: In the present study the linkage between hydraulic, photosynthetic and phenological properties of tropical dry forest trees were investigated. Seasonal patterns of stem-specific conductivity (KSP) described from 12 species, including deciduous, brevi-deciduous and evergreen species, indicated that only evergreen species were consistent in their response to a dry-to-wet season transition. In contrast, KSP in deciduous and brevi-deciduous species encompassed a range of responses, from an insignificant increase in KSP following rains in some species, to a nine-fold increase in others. Amongst deciduous species, the minimum KSP during the dry season ranged from 6 to 56% of wet season KSP, indicating in the latter case that a significant portion of the xylem remained functional during the dry season. In all species and all seasons, leaf-specific stem conductivity (KL) was strongly related to the photosynthetic capacity of the supported foliage, although leaf photosynthesis became saturated in species with high KL. The strength of this correlation was surprising given that much of the whole-plant resistance appears to be in the leaves. Hydraulic capacity, defined as the product of KL and the soil–leaf water potential difference, was strongly correlated with the photosynthetic rate of foliage in the dry season, but only weakly correlated in the wet season.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Plant, cell & environment 26 (2003), S. 0 
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: This study examined the linkage between xylem vulnerability, stomatal response to leaf water potential (ΨL), and loss of leaf turgor in eight species of seasonally dry tropical forest trees. In order to maximize the potential variation in these traits species that exhibit a range of leaf habits and phenologies were selected. It was found that in all species stomatal conductance was responsive to ΨL over a narrow range of water potentials, and that ΨL inducing 50% stomatal closure was correlated with both the ΨL inducing a 20% loss of xylem hydraulic conductivity and leaf water potential at turgor loss in all species. In contrast, there was no correlation between the water potential causing a 50% loss of conductivity in the stem xylem, and the water potential at stomatal closure (ΨSC) amongst species. It was concluded that although both leaf and xylem characters are correlated with the response of stomata to ΨL, there is considerable flexibility in this linkage. The range of responses is discussed in terms of the differing leaf-loss strategies exhibited by these species.
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