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  • Oxford University Press  (56)
  • American Institute of Physics (AIP)  (51)
  • Nature Publishing Group  (29)
  • American Association for the Advancement of Science (AAAS)  (24)
  • American Physical Society (APS)
  • 2000-2004  (152)
  • 1935-1939  (8)
Collection
Keywords
Publisher
Years
Year
  • 1
    Unknown
    Studies in classical history and society (2002)
    Oxford [England] ; New York : Oxford University Press
    American classical studies  
    Details
    Keywords: Greece, History, To 146 B.C. ; Grèce, Histoire, Jusqu'à 146 av. J.-C. ; Rome, Histoire. ; Rome, History. ; Civilisation ancienne. ; Civilization, Classical.
    Pages: xi, 151 p.
    ISBN: 0-19-518490-4
    URL: http://www.netLibrary.com/urlapi.asp?action=summary&v=1&bookid=121005
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    E-Book (German National Licenses)
  • 2
    Unknown
    Social movements : identity, culture, and the state (2002)
    Oxford ; New York : Oxford University Press
    Details
    Keywords: Mouvements sociaux. ; Social movements.
    Notes: pt. I. Introduction. Opportunities and identities: bridge-building in the study of social movements / David S. Meyer -- pt. II. States and policies. State repression and democracy protest in three southeast Asian countries / Vincent Boudreau -- Mobilization on the South African gold mines / T. Dunbar Moodie -- Multiple meditations: the state and the women's movements in India / Manisha Desai -- The contradictions of gay ethnicity: forging identity in Vermont / Mary Bernstein -- Creating social change: lessons from the civil rights movement / Kenneth T. Andrews -- pt. III. Organization and strategies. The "meso" in social movement research / Suzanne Staggenborg -- Strategizing and the sense of context: reflections on the first two weeks of the Liverpool docks lockout, September-October 1995 / Colin Barker and Michael Lavalette -- Factions and the continuity of political challengers / Mildred A. Schwartz -- More than one feminism: organizational structure and the construction of collective identity / Jo Reger -- The development of individual identity and consciousness among movements of the left and right / Rebecca E. Klatch -- pt. IV. Collective identities, discourse, and culture. Toward a more dialogic analysis of social movement culture / Marc W. Steinberg -- Materialist feminist discourse analysis and social movement research: mapping the changing context for "community control" / Nancy A. Naples -- From the "beloved community" to "family values": religious language, symbolic repertoires, and democratic culture / Rhys H. Williams -- External political change, collective identities, and participation in social movement organizations / Belinda Robnett -- pt. V. Conclusion. Meaning and structure in social movements / Nancy Whittier
    Pages: xvi, 366 p.
    ISBN: 0-19-530277-X
    URL: http://www.netLibrary.com/urlapi.asp?action=summary&v=1&bookid=129231
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  • 3
    Electronic Resource
    Electronic Resource
    Band parameters for III–V compound semiconductors and their alloys (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5815-5875 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1368156
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  • 4
    Electronic Resource
    Electronic Resource
    Fermi level position at metal Si1−x−yGexCy interfaces (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5533-5542 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, we have investigated the Schottky barrier heights on n- and p-type Si1−x−yGexCy alloys with Zr, Ti, W, Ni and Pt as metals (ΦBn and ΦBp, respectively). Contacts on Si1−xGex alloys showed various behaviors depending on the metal work function Φm. For low-Φm metals (Zr, Ti), ΦBn increases with x, while ΦBp(x) decreases. For higher Φm metals (Pt), ΦBn strongly decreases with x. In the particular case of W (intermediate Φm value), ΦBp follows exactly the decrease of the SiGe band gap with x, while ΦBn remains constant. Nevertheless, whatever the metal, the reduction of the sum ΦBn+ΦBp gives the band-gap variation as a function of x, and the Fermi level is located at the same position for both n and p-type layers. A weaker effect of Φm on the Schottky barrier heights is observed compared to pure Si: the position of the Fermi level tends to remain in the range 0.60–0.65 eV below the conduction band, as soon as Ge is adding in Si. W contacts on Si1−x−yGexCy alloys evidenced the strong effect of C on ΦBn and ΦBp. The variations of ΦBn(y) or ΦBp(y) cannot be correlated to the band gap. In addition, the position of the Fermi level at the interface depends on the type of the alloy. Nevertheless, as in the case of the binary alloy SiGe, a weaker dependence on Φm compared to that observed for pure Si is shown. High values of the ideality factor with increasing the C content may evidence the presence of interfacial inhomogeneities, which could be correlated to C short range order. The present results have been compared to existing published results. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1365943
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  • 5
    Electronic Resource
    Electronic Resource
    A comparison of the Hall-effect and secondary ion mass spectroscopy on the shallow oxygen donor in unintentionally doped GaN films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1811-1817 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on temperature-dependent Hall-effect measurements and secondary ion mass spectroscopy on unintentionally doped, n-type conducting GaN epitaxial films. Over a wide range of free carrier concentrations we find a good correlation between the Hall measurements and the atomic oxygen concentration. We observe an increase of the oxygen concentration close to the interface between the film and the sapphire substrate, which is typical for the growth technique used (synthesis from galliumtrichloride and ammonia). It produces a degenerate n-type layer of (approximate)1.5 μm thickness and results in a temperature-independent mobility and Hall concentration at low temperatures (〈50 K). The gradient in free carrier concentration can also be seen in spatially resolved Raman and cathodoluminescence experiments. Based on the temperature dependence of the Hall-effect, Fourier transform infrared absorption experiments, and photoluminescence we come to the conclusion that oxygen produces a shallow donor level with a binding energy comparable to the shallow Si donor. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1305549
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  • 6
    Electronic Resource
    Electronic Resource
    In-plane magnetization of garnet films imaged by proximal probe nonlinear magneto-optical microscopy (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2166-2168 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that small in-plane magnetization components in magnetic garnet films with perpendicular anisotropy can be imaged using nonlinear magneto-optical proximal probe microscopy, i.e., magnetization-induced second harmonic generation together with a scanning near-field optical microscope. A relationship exists between the in-plane magnetization domains we observed and the typical maze-like out-of-plane magnetization domains that are simultaneously imaged recording the linear Faraday effect. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1302734
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  • 7
    Electronic Resource
    Electronic Resource
    Phase formation and strain relaxation during thermal reaction of Zr and Ti with strained Si1−x−yGexCy epilayers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1418-1423 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicides are often used in Si technology for both their ohmic and rectifying properties. In this work, we have compared Zr and Ti germanosilicides as possible metallic contacts on SiGeC alloys in terms of phase formation and stability of the unreacted SiGeC alloy. The germanosilicides are obtained after rapid thermal annealings of Zr or Ti with strained SiGeC layers. The interactions of the metal films with these alloys have been investigated by sheet resistance measurements, x-ray diffraction (XRD), cross-sectional transmission electron microscopy (TEM), and energy dispersive spectroscopy in situ in the TEM. Four crystal x-ray diffraction was performed to measure the residual strain of the unreacted SiGeC epilayer after reaction. The analyses indicate that the final compounds are the C49–Zr(SiGe)2 and C54–Ti(SiGe)2 phases, respectively: In both cases, the compound is formed by monocrystalline grains with various orientations. Nevertheless, neither XRD, nor sheet resistance measurements give any clear information about the C incorporation in the phase, when the reaction occurs with a SiGeC layer. We have observed that the use of Zr completely avoids Ge segregation with an uniform layer formed, while in the case of the reaction with Ti, the grains do not form a continuous layer and Ge-segregation is evidenced: A Ge-rich Si1−z−yGez(Cy) alloy is detected in between the metallic grains. In addition, an early strain relaxation of the unreacted SiGe layer is observed after reaction, and it is much more important after reaction with Ti. During the reaction with nearly compensated SiGeC layers, Zr totally prevents the initial state of strain, while Ti strongly affects the unreacted SiGeC alloy and destroys its initial state. All these results indicate that Zr may be an interesting candidate for realizing germanosilicide contacts on IV–IV alloys, due to its good thermal stability. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373833
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  • 8
    Electronic Resource
    Electronic Resource
    Two-dimensional particle-in-cell simulation for magnetized transport of ultra-high relativistic currents in plasma (2000)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 7 (2000), S. 1302-1308 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonlinear channel dynamics and magnetized transport of relativistic electron currents in plasma have been investigated, using transverse two-dimensional particle-in-cell simulations allowing for movable ions and fully relativistic binary collisions. Current filaments self-organize in coaxial structures where the relativistic beam in the center is surrounded by magnetized vacuum and a thin return current sheath outside. The current sheath explodes radially. The filament as a whole is current-neutral with almost vanishing magnetic field at the outside. Ion dynamics play an important role, leading to enhanced self-pinching of the filament cores. Collisional effects become significant in the slowly moving return currents. It is shown that electron currents of 100–1000 MA can be transported through dense plasma, but only through a large number of current filaments, each carrying about one Alfvén current. This aspect is essential for relativistic electron transport in fast ignition of targets for inertial confinement fusion (ICF). © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.873941
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  • 9
    Electronic Resource
    Electronic Resource
    Magnetostriction and torque response of Tb0.5Dy0.5Fe2/Fe composites (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8653-8657 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Equivolume composites of melt-spun Tb0.5Dy0.5Fe2 in an Fe matrix have been consolidated by hot pressing over a range of temperatures. We find that both the magnetic field dependence of the magnetostriction λ(H) and the torque response Rτ of these materials in a sensor configuration depend strongly on the consolidation temperature. As the hot press temperature increases, λ(H) becomes sharper, generating higher strains at lower applied fields, higher values of the maximum slope dλ/dH, and more nearly saturated λ(H) at the maximum applied field of 19 kOe. These changes in magnetostriction are closely correlated with the observed response of the composites in a torque test. For a composite hot pressed at 755 °C we observe Rτ=6.3 G/100 ppm, a value which is twice that obtained for material consolidated at 550 °C and nearly a factor of three greater than the response of maraging steel. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373592
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  • 10
    Electronic Resource
    Electronic Resource
    Spectral dependence and Hall effect of persistent photoconductivity in polycrystalline Cu(In,Ga)Se2 thin films (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5093-5099 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate persistent photoconductivity in polycrystalline Cu(In,Ga)Se2 thin films by measuring the transient behavior of their electrical conductivity under and after illumination. Characteristic nonexponential transients of the conductivity under and after illumination extend over more than four orders of magnitude in time. From this result, we conclude that the persistent photoconductivity in Cu(In,Ga)Se2 cannot be explained by the mesoscopic barrier model. Rather, it is a microscopic effect which can be understood in the frame of a large lattice relaxation model. Investigation of the conductivity under monochromatic subband gap illumination determines the minimum photon energy for the direct excitation of the persistent photoconductivity to be approximately 0.6 eV. Hall effect measurements identify the persistent photoconductivity as a hole density effect in the bulk of the Cu(In,Ga)Se2 grains, consistent with the lattice relaxation model. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1459597
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