ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Wiley  (67)
  • American Institute of Physics (AIP)  (16)
  • International Union of Crystallography  (8)
  • 2000-2004  (54)
  • 1995-1999  (37)
  • 1
    Electronic Resource
    Electronic Resource
    Erratum: "Ion-channeling analysis of boron clusters in silicon" [J. Appl. Phys. 90, 4741 (2001)] (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5507-5507 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1463446
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Influence of a partially oxidized calcium cathode on the performance of polymeric light emitting diodes (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1376-1382 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the influence of the presence of oxygen during the deposition of the calcium cathode on the structure and on the performance of polymeric light emitting diodes (pLEDs). The oxygen background pressure during deposition of the calcium cathode of polymeric LEDs was varied. Subsequently, the oxygen depth distribution was measured and correlated with the performance of the pLEDs. The devices have been fabricated in a recently built ultraclean setup. The polymer layers of the pLEDs have been spincoated in a dry nitrogen atmosphere and transported directly into an ultrahigh vacuum chamber where the metal electrodes have been deposited by evaporation. We used indium–tin–oxide as anode, OC1C10 PPV as electroluminescent polymer, calcium as cathode, and aluminum as protecting layer. We achieved reproducibility of about 15% in current and brightness for devices fabricated in an oxygen atmosphere of (very-much-less-than)10−9 mbar. For further investigations the calcium deposition was carried out in an oxygen atmosphere from 10−8 to 10−5 mbar. We determined the amount of oxygen in the different layers of the current–voltage-light characterized pLEDs with elastic recoil detection analysis and correlated it with the characteristics of the devices. The external efficiency of the pLEDs decreases continuously with increasing oxygen pressure, the current shows a pronounced minimum. The brightness mostly decreases with increasing oxygen with an indication of a slight minimum. PLEDs with completely oxidized calcium are not operational. The first contact of the pLEDs with the dry glove box environment leads to an immediate reduction of current and brightness which is caused by the cooling of the devices by several degrees. Determining reproducible characteristics of pLEDs in the vacuum requires the measurement of their temperature. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1383577
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Channeling on boron clusters in silicon (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5032-5037 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low energy ion implantation at high doses of boron (〉1015 cm−2) in Si is necessary for the fabrication of ultrashallow junctions but can result in the undesirable presence of boron clusters. Values for the dimensions of the lattice distortions in the implanted Si are obtained by comparing the enhanced dechanneling and the direct scattering peak in the region with clusters in a channeled Rutherford backscattering spectrometry spectrum to those from Monte Carlo calculations on a curved crystal structure. Values of about 0.17 and 65 nm are found for the maximum deformation and the length of the distortions in the crystal, respectively, which implies that the lattice distortions extend significantly outside the layer in which the B clusters are supposed to be present. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1406968
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Thermal wave imaging of electrically heated microstructures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2013-2018 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermoreflectance technique is applied for imaging electric current distributions and thermal transfer in a temperature reference resistor heated by an alternating current. High-frequency scans (30 kHz) allow imaging of the current density distribution in conducting strips of the resistor while scans of amplitude and phase of the surface temperature variation at lower frequencies reveal plane, cylindrical, and spherical thermal waves. We investigate wave dimensionality as a function of heating geometry and thermal length, and present a simple method allowing a quantitative thermal analysis by exploiting the phase profile of cylindrical thermal waves. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363094
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Mechanisms behind green photoluminescence in ZnO phosphor powders (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7983-7990 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We explore the interrelationships between the green 510 nm emission, the free-carrier concentration, and the paramagnetic oxygen-vacancy density in commercial ZnO phosphors by combining photoluminescence, optical-absorption, and electron-paramagnetic-resonance spectroscopies. We find that the green emission intensity is strongly influenced by free-carrier depletion at the particle surface, particularly for small particles and/or low doping. Our data suggest that the singly ionized oxygen vacancy is responsible for the green emission in ZnO; this emission results from the recombination of a photogenerated hole with the singly ionized charge state of this defect. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362349
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Effect of B-site cation stoichiometry on electrical fatigue of RuO2//Pb(ZrxTi1−x)O3//RuO2 capacitors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1013-1016 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: There have been numerous reports that Pb(ZrxTi1−x)O3 (PZT) thin-film capacitors with RuO2 electrodes and compositions near the morphotropic phase boundary exhibit minimal decrease in switched polarization with electric-field cycling. We show that the fatigue performance of RuO2//PZT//RuO2 capacitors strongly depends on PZT film composition. Specifically, we demonstrate that the rate of polarization fatigue increases with increasing Ti content for PZT thin films of tetragonal crystal symmetry deposited on RuO2 electrodes. As the Ti content of the PZT films increased, the film gain morphology changed from columnar to granular and the volume percent of a fluorite-type second phase decreased. These microstructural trends and the possibility that the electrode material acts as a sink for oxygen vacancies are discussed to explain the fatigue dependence on B-site cation ratio for PZT films with RuO2 electrodes. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360888
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Measuring local thermal conductivity in polycrystalline diamond with a high resolution photothermal microscope (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2966-2972 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A photothermal microscope that provides micrometer lateral and submicrometer depth resolution was designed. Thermal conductivity measurements with modulation frequencies up to 12 MHz on single grains in polycrystalline diamond demonstrate its lateral resolution power even for a highly conducting material. Measured conductivities strongly depend on the averaged volume and values up to 2200 W/mK are found in the high frequency limit where the properties inside a grain are sampled. The capability of the instrument to measure thermal parameters on thin films is demonstrated for gold films evaporated on quartz with a thickness ranging from 20 to 1500 nm. Measurements reveal a strong thickness dependence for both thin film conductivity and the contact resistance between film and substrate. Thermal conductivity decreases monotonically from 230 to 30 W/mK whereas the contact resistance rises from 2×10−7 to 8×10−6 m2K/W with decreasing film thickness. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364329
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Impact of Pb doping on the optical and electronic properties of ZnO powders (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1280-1282 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron paramagnetic resonance (EPR), optical absorption, and photoluminescence (PL) spectroscopy have been combined to characterize Pb-doped ZnO ceramic powders. We observe a decrease in the 2.26 eV emission peak and a concomitant smearing of the band edges, narrowing the effective gap of the grains to ≈2 eV with increasing lead content. Both phenomena are at least in part attributed to the formation of a separate PbO-like phase, likely residing at the grain boundaries. The free-carrier concentration in the grains was also observed to decrease with increasing Pb content. Our EPR results suggest that this may be due to electron transfer from oxygen vacancy donors to substitutional Pb centers, acting as electron traps. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114397
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    A model for ion-irradiation induced hydrogen loss from organic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 1058-1064 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the study of interfacial diffusion processes in polymer light-emitting diodes, the use of high-energy ion-scattering techniques can be of great value due to the possibility of quantitative elemental depth profiling. However, ion irradiation of polymers is known to cause various degradation effects, including the loss of hydrogen. Since the hydrogen loss determines the accuracy of depth profiling, it is an interesting subject for study in order to define experimental conditions in which the degradation is suppressed. The loss of hydrogen from porphyrins (organic solar cells) has been measured by means of elastic recoil detection analysis with 2, 4, and 7.6 MeV He+ beams. A theoretical model is proposed in which the hydrogen loss is described through the formation and recombination of free hydrogen radicals. A distinct difference is introduced between direct recombination processes and the diffusion of radicals out of the ion track. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365871
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Ion-channeling analysis of boron clusters in silicon (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4741-4747 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured axially channeled Rutherford backscattering spectra of Si1−xGex nanofilms in silicon(001). A step in the yield of the host crystal was found for off-normal axes at the depth of the nanofilm. The step was measured as a function of the angle between the incoming beam and the [011] axis and shows two maxima. It is found that Monte Carlo simulations assuming tetragonal distortion reproduce the experimental results. A universal curve was derived which enables determination of the tetragonal distortion from ion-channeling experiments, for a given film thickness. The results are compared with XRD measurements. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1405838
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...