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  • 1985-1989  (91)
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  • 1
    Publication Date: 2022-05-26
    Description: Author Posting. © The Authors, 2005. This is the author's version of the work. It is posted here by permission of Elsevier B. V. for personal use, not for redistribution. The definitive version was published in Deep Sea Research Part I: Oceanographic Research Papers 52 (2005): 2315-2332, doi:10.1016/j.dsr.2005.08.004.
    Description: A Video Plankton Recorder (VPR) and remotely operated vehicle (ROV) were utilized on three cruises in the oligotrophic North Pacific Subtropical Gyre (NPSG) between 1995 and 2002 to quantify the size and abundance of marine snow and Rhizosolenia diatom mats within the upper 305 m of the water column. Quantitative image analysis of video collected by the VPR and an ROV-mounted particle imaging system provides the first transect of marine snow size and abundance across the central North Pacific gyre extending from 920 km NW of Oahu to 555 km off Southern California. Snow abundance in the upper 55 m was surprisingly high for this oligotrophic region, with peak values of 6.0-13.0 x 103 aggregates m-3 at the western and eastern-most stations. At stations located in the middle of the transect (farthest from HI and CA), upper water column snow abundance displayed values of ~0.5-1.0 x 103 aggregates m-3. VPR and ROV imagery also provided in-situ documentation of the presence of nitrogen-transporting, vertically migrating Rhizosolenia mats from the surface to 〉300 m with mat abundances ranging from 0-10 mats m-3. There was clear evidence that Rhizosolenia mats commonly reach sub-nutricline depths. The mats were noted to be a common feature in the North Pacific gyre, with the lower salinity edge of the California Current appearing to be the easternmost extent of their oceanic distribution. Based on ROV observations at depth, flux by large (〉1.5 cm) mats is revised upward 4.5 fold, yielding an average value of 40 µmol N m-2 d-1, a value equaling previous estimates that included much smaller mats visible only to towed optical systems. Our results suggest that the occurrence across a broad region of the NPSG of particulate organic matter (POM) production events represented by high concentrations of Rhizosolenia mats, associated mesozooplankton, and abundant detrital marine aggregates may represent significant stochastic components in the overall carbon, nitrogen and silica budgets of the oligotrophic subtropical gyre. Likewise, their presence has important implications for the proposed climate-driven, ecosystem reorganization or domain shift occurring in the NPSG.
    Description: This project was primarily supported by NSF Biological Oceanography Program grant OCE-9423471 to C. Pilskaln, OCE-9415923 and OCE-9414372/OCE-0094591 to T. Villareal, and assisted by OCE-9314533 to D. Caron.
    Keywords: Biogeochemical cycles ; Carbon cycle ; Nitrogen cycle ; Particle flux ; North Pacific Subtropical Gyre ; 24–32°N ; 168–123°W
    Repository Name: Woods Hole Open Access Server
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2158-2160 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, photoluminescence results obtained from two different undoped multilayered pseudomorphic structures grown by molecular beam epitaxy are compared. Intense and spectrally narrow emission was observed from both GaAs/InxGa1−xAs/GaAs and AlxGa1−xAs/InxGa1−xAs/GaAs structures. Excitonic emission from the quantum wells was confirmed by measurements of photoluminescence excitation spectra. The intensity and temperature dependences of the photoluminescence also revealed emission arising from bound excitons and impurities in the quantum wells. Intrinsic and extrinsic emission from confined levels was confirmed by the recorded photoluminescence excitation spectra along with intensity and temperature dependences. In the asymmetric AlxGa1−xAs/InxGa1−xAs/GaAs structure large changes were observed in the photoluminescence intensity under continuous optical excitation which are caused by the optical excitation of defects in the ternary AlxGa1−xAs on top of the pseudomorphically grown InxGa1−xAs.
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 59-61 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Be-doped GaAs layers were grown by the migration-enhanced epitaxy (MEE) method at 300 °C. The MEE layers showed practically no electrical activation. Rapid thermal annealing on the MEE layers resulted in mobility and hole concentration comparable to those of conventional molecular beam epitaxy (MBE) layers grown at 600 °C. Secondary-ion mass spectroscopy showed that the Be diffusion in annealed MEE layers was much smaller than that in conventional MBE layers, especially for highly doped layers. Raman spectroscopy and 4 K photoluminescence were also performed. The MEE method can replace the conventional MBE method for device applications which require high hole concentration with small diffusion.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1494-1496 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of antimony molecular beams to grow passivating films on "as-grown'' GaAs surfaces is described. The substrate need not be cooled below 350 °C for deposition as in the case of As4 and not heated above 500 °C for an extended period for removal as in the case of InAs passivation. Good electrical properties of antimony passivated, air exposed, and regrown interfaces were obtained. No degradation in macroscopic defect densities were found with this technique.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 395-399 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sulphur from an electrochemical source has been used to dope GaSb grown by molecular-beam epitaxy. The incorporation of sulphur in the epilayers has been measured by secondary ion mass spectrometry, and the effects of substrate temperature during growth and of the antimony-to-gallium flux ratio have been studied.The incorporation has been found to be a strong function of substrate temperature, varying from ∼100% below 435 °C to ∼1% at 525 °C. The incorporation also increases with antimony overpressure, varying by a factor of 3 on changing the antimony-to-gallium flux ratio from 1:1 to 4:1. The substrate temperature dependence is described by a simple kinetic model. The electrical activity of the incorporated sulphur is shown to be close to 100%.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1300-1305 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Historically GaAlAs alloys grown by molecular-beam epitaxy have high deep level concentrations (〉1016 cm−3), low luminescent efficiency with broad peaks, and are difficult to dope controllably below mid 1016 cm−3. We report the effect that the low incident antimony molecule fluxes during growth appear to help reduce the density of deep levels below 1014 cm−3, which then allows reproducible doping control in the low 1015 cm−3 range. Exciton-dominated photoluminescence with half widths ∼4.0 meV are now routinely achieved using this technique. Further evidence for the quality improvement of AlGaAs by heavy atom (Sb) doping comes from high 4 K two-dimensional electron gas mobilities for low sheet electron densities, e.g., 1.3×106 cm2/V s for n=2×1011 cm−2. SIMS profiles of antimony content are presented and estimates of incorporated concentrations are given.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2673-2676 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The unintentional background concentration in molecular-beam epitaxially grown GaAs has been found to vary between 1×1014 cm−3 n type and 2×1016 cm−3 p type when grown with solid arsenic from several different suppliers. This variation is largely due to carbon incorporation which in turn is directly traceable to the arsenic charge. Increases in arsenic flux and substrate temperature both give rise to increased carbon acceptor concentrations. We propose that this carbon arises form heavy organic molecules such as rotary pump oil incorporated during the vacuum sublimation process used by some commercial suppliers.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3610-3612 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incorporation of thallium in molecular-beam-epitaxial indium antimonide has been studied by secondary-ion mass spectrometry. At temperatures above 300 °C desorption competes with incorporation. Increasing incorporation and surface accumulation is observed below 300 °C. The incorporation rate is also affected by the surface stoichiometry in a manner consistent with thallium occupying indium sublattice sites.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1542-1547 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Seebeck coefficient, electrical resistivity, thermal conductivity, and Hall effect have been studied in γ-phase La3−xS4 (LaSy) in the composition range 0.04≤x≤0.3 (1.35≤y≤1.48) in order to ascertain its suitability for high-temperature (300 to 1400 K) thermoelectric energy conversion. In this temperature and composition range the material behaves as an extrinsic semiconductor whose degenerate carrier concentration is controlled by the stoichiometric ratio of La to S. A maximum figure-of-merit (Z) of ∼5×10−4 K−1 at a composition x=0.3, y=1.48 (LaS1.48) was obtained.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 951-954 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The integral method of measuring the Seebeck voltage V(T), in which one end of the sample is held at a fixed temperature TC, and the other end is varied through the temperature T range of interest, has been adapted to short rod-shaped samples. The Seebeck coefficient S is obtained from the slope of the V(T) vs T curve, i.e., S=dV(T)/dT. The apparatus has been completely automated such that the specimen is automatically cycled through a preselected temperature range, up to a maximum temperature of 1000 °C, and the V(T), T, and TC values are acquired, stored, and analyzed by means of a microcomputer. Simplicity of sample handling and minimal operator involvement make this method well suited to the survey of large numbers of samples.
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