Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
55 (1989), S. 59-61
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Be-doped GaAs layers were grown by the migration-enhanced epitaxy (MEE) method at 300 °C. The MEE layers showed practically no electrical activation. Rapid thermal annealing on the MEE layers resulted in mobility and hole concentration comparable to those of conventional molecular beam epitaxy (MBE) layers grown at 600 °C. Secondary-ion mass spectroscopy showed that the Be diffusion in annealed MEE layers was much smaller than that in conventional MBE layers, especially for highly doped layers. Raman spectroscopy and 4 K photoluminescence were also performed. The MEE method can replace the conventional MBE method for device applications which require high hole concentration with small diffusion.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101753
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