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  • Springer  (68)
  • American Institute of Physics (AIP)  (8)
  • 2010-2014  (36)
  • 1990-1994  (34)
  • 1965-1969  (6)
  • 1915-1919
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4211-4216 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Analytical and numerical calculations of threshold behavior and electro-optical characteristics in twisted chiral nematic layers are presented, when weak anchoring in the tilt and twist angle of the director is assumed. An analytical expression for the effective twist angle and the Fréedericksz threshold voltage is derived. In cells with bistabilities, we investigate the influence of the anchoring parameters and device parameters on the width of the hysteresis. Using the 4×4-matrix formalism of Berreman [J. Opt. Soc. Am. 62, 502 (1972)], we demonstrate the influence of the weak anchoring on the transmission-versus-voltage characteristic.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4082-4084 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical contact resistivities of both Al and Cu single layer contacts as well as Cu/Au and Al/Au bilayer metal contacts to YBa2Cu3O7−x (YBCO) thin film have been studied. It was found that aluminum and copper make poor electrical contacts to YBCO due to interface reactions. These contacts have large contact resistivity (10−1–1 Ω cm2), orders of magnitude higher than that of a gold/YBCO contact (10−6 Ω cm2). When an ultrathin Au interlayer (10–30 A(ring)) was inserted between an Al or Cu overlayer and a YBCO film, interface reaction was greatly reduced. The contact resistivities of Al/Au and Cu/Au bilayer-metal contacts dropped by five orders of magnitude when Au interlayer thickness was increased from 0 to 10 A(ring). With the gold interlayer thickness of 15 A(ring), the Al/Au and Cu/Au bilayer-metal contacts reached a minimum contact resistivity, approaching that of a thick single-layer Au metal contact.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8417-8419 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The alloy system Six(SnyC1−y)1−x was investigated. The purpose is to form material with reduced strain at silicon heterojunctions. In this work, samples were prepared by coimplantation of tin and carbon ions into silicon wafers within the dosage range 1015–1016 cm−2, followed by rapid thermal annealing. Rutherford backscattering and channeling, Auger sputter profiling, and secondary-ion-mass spectrometry were employed to study the crystallinity, chemical composition, and depth profiles. A near-perfect crystallinity for 0.5 at. % of tin and carbon was achieved. For high-dose implanted samples, tin segregation was observed. This work demonstrates promising features of group-IV semiconductor synthesis by ion implantation.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 7951-7961 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We present a study of deep-ultraviolet-light-enhanced (4.1〈hν〈5.1 eV) oxygen reactions on GaAs from submonolayer to several monolayers coverage. The reaction is nonthermal and does not involve gas-phase excitation or dissociation of O2. Our experiments show a distinct wavelength and coverage dependence for the photoenhancement. X-ray photoelectron spectroscopy has been used to examine the chemical nature of the oxygen adsorbate and the GaAs oxides in order to find intermediate reaction species and evidence of the reaction pathways. The roles of photons and photogenerated carriers in the reaction enhancement mechanism are discussed. The results indicate that a mechanism based on photoemission of electrons into the growing oxide film is most in accord with the experimental observations. Such electron emission would increase the field-driven transport of oxygen to the GaAs interface.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1143-1145 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface chemistry of GaAs-oxide removal with an electron cyclotron resonance (ECR) hydrogen plasma has been investigated with x-ray photoelectron spectroscopy. It is found that As oxide is efficiently removed at room temperature, and heating expedites the removal of Ga oxide. Band bending changes during ECR hydrogen-plasma oxide reduction are also discussed.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2228-2230 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrafast electromagnetic radiation induced by a femtosecond laser beam from a semiconductor provides determination of the impurity doping concentration, carrier mobility, sign, and strength of the depletion field near the semiconductor surface.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 34 (1993), S. 3327-3342 
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: A discrete version of the quaternionic Cauchy–Riemann equation ∂A=F, where F is Gauss–Poisson white noise, is discussed. On the lattice δZ4 random variables Fδ(δn) and Aδ(δn) are constructed which approximate the corresponding random fields F and A, respectively, in the limit δ→0. In the Gaussian case the random variables Aδ(δn) can be interpreted as the lattice approximation of the free electromagnetic Euclidean potential field whereas in the non-Gaussian case one obtains an approximation of nonlinear interacting electromagnetic quantum fields. Convergence to the continuum limit is proven.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 616-616 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Annales geophysicae 12 (1994), S. 1197-1206 
    ISSN: 0992-7689
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences , Physics
    Notes: Abstract In a series of ozone-sonde soundings at the Hohenpeißenberg observatory, starting in 1967, the most striking features are increases of \sim2.2% per year in all tropospheric heights up to 8 km during the past 24 years. These facts have recently been published and discussed by several authors. In this paper, we present some evidence for the increase of tropospheric ozone concentrations during the past 50 years 1940–1990 in the territory of the northern edge of the Bavarian Alps, including the Hohenpeißenberg data. In December 1940 and August 1942, probably the first exact wet-chemical vertical soundings of ozone up to 9 km height were made by an aircraft in the region mentioned. These results were published in the earlier literature. We have converted the results of the flights on 4 days in December 1940 and on 6 days in August 1942 to modern units and have compared them with the Hohenpeißenberg ozone-sonde data of the December and August months. We also compared the data at the ground with the August results of Paris-Montsouris 1886-1898. Our results show an increase of ozone concentration at all tropospheric heights in Upper Bavaria during the past 50 years, compared with the Montsouris data in August during the past 105 years. In the recently published papers, the increases since 1967 were approximated linearly.Our results, extended to the past, show non-linear trends, with steeper increases since 1975-1979. Possible reasons for these findings are discussed. Quite recently (in case of the December months since 1986/87, the August months since 1990), the ozone mixing ratios at and above Hohenpeißenberg seem to have decreased.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Naturwissenschaften 53 (1966), S. 582-582 
    ISSN: 1432-1904
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology , Natural Sciences in General
    Type of Medium: Electronic Resource
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