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  • American Institute of Physics (AIP)  (8)
  • 2010-2014
  • 2005-2009
  • 2000-2004  (3)
  • 1990-1994  (5)
  • 1
    Electronic Resource
    Electronic Resource
    Optical transitions in (ZnCo)Se and (ZnFe)Se: Role of an effective p–d exchange (invited) : 38th Annual Confrerence on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5719-5724 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper we discuss photoluminescence (PL) and Raman excitations in the diluted magnetic semiconductors Zn1−xCoxSe and Zn1−xFexSe. The PL spectra associated with isolated crystal field d levels are found to rapidly weaken and/or broaden as the transition metal ion concentration approaches and increases beyond a critical value. In addition a Raman continuum, that overlaps with the optical phonon, is observed to develop when the PL features are modified. In the corresponding Zn1−xCoxSe samples the optical phonons acquire a characteristic Fano line shape suggestive of its coupling to the Raman continuum. It is proposed that these changes to the optical transitions arise from the enhancement of an effective p–d hybridization between low-lying d levels and band electrons with increasing x—an effect largely due to the proximity of the Co2+ and Fe2+ crystal field ground levels to the valence band maximum.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355594
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  • 2
    Electronic Resource
    Electronic Resource
    Radiative recombination via intrinsic defects in CuxGaySe2 (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4391-4400 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed analysis of the radiative recombination processes in CuxGaySe2 epitaxial layers is presented aiming at an investigation of the intrinsic defect levels as a function of chemical composition. CuxGaySe2 is grown by metalorganic vapor phase epitaxy to allow a precise control of composition. Temperature and excitation intensity dependent photoluminescence is used to identify different recombination mechanisms and to determine the ionization energies of the defect levels involved. Defect-correlated optical transitions in Cu-rich epilayers are described in a recombination model consisting of two acceptor and one donor levels showing ionization energies of (60±10) meV, (100±10) meV, and (12±5) meV, respectively. The identification of a shallow compensating donor in CuxGaySe2 and the assignment of the 100 meV state to an acceptor are the most important new aspects in this model. Photoluminescence properties of layers showing Ga-rich compositions are discussed in a model of highly doped and highly compensated semiconductors—the model of fluctuating potentials. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1357786
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  • 3
    Electronic Resource
    Electronic Resource
    Neutron scattering investigation of the ordered state of the nuclear spins in Cu at 60 nK (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 5433-5435 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the magnetic structure of the nuclear spin system in Cu below 60 nK by means of neutron scattering. The observation of the nuclear (100) superlattice reflection proves the theoretically predicted antiferromagnetic arrangement of the nuclear spins. The critical field at the lowest temperatures was 0.24 mT. Around 0.1 mT the (100) reflection could not be observed. This is taken as an indication for, possibly, a reorientation phase transitition at this field. Therefore, the phase diagram contains at least two phases. For 0.1 mT〈B〈0.24 mT strong time dependencies of the ordering were observed. At low fields (B〈0.1 mT) nucleation times of the order of 10 s have been observed. These results are discussed with respect to the cooling technique: Adiabatic demagnetization requires constant entropy, a rather unusual way to bring a system from the paramagnetic to the ordered phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344580
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  • 4
    Electronic Resource
    Electronic Resource
    Fast thermoremanent magnetization in the insulating spin glass CsNiFeF6 : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5466-5467 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: With a newly built superconducting quantum interference device magnetometer, the time range of measurements of the thermoremanent magnetization (TRM) was extended to less than 10 ms. This new method allows a direct investigation of aging and relaxation in the spin glass region for short times. As a first example for fast TRM, the magnetization in a single crystal of the insulating spin glass CsNiFeF6 was measured in the time range −2〈log(t/s)〈3 at magnetic fields between 2 and 20 G at temperatures between 4.7 and 1.7 K. Additionally, the zero field and field cooled magnetization of this sample to temperatures up to 9 K was studied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353667
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  • 5
    Electronic Resource
    Electronic Resource
    Neutron scattering studies of the spin dynamics in nonlinear and Haldane systems (invited) (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 5593-5598 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In 1D magnets contributions to the spin dynamics which are outside the scope of spin-wave theory can be studied theoretically as well as experimentally. Two prominent examples of such effects are discussed here: solitons and the Haldane gap. We discuss inelastic polarized neutron scattering results on the stability of solitons in CsNiF3 and on the existence of the Haldane gap in CsNiCl3. In both cases, the separate determination of the different correlation functions 〈SαSα〉 with α=x,y,z is essential for definite conclusions: Solitons in CsNiF3 appear to be much more stable than expected from classical theories, and the Haldane gap is the only explanation for the observed gaps in CsNiCl3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345895
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  • 6
    Electronic Resource
    Electronic Resource
    Optical properties of the layered transition-metal-dichalcogenide ReS2: Anisotropy in the van der Waals plane (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5266-5268 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spectral quantum efficiency in ReS2 heterodiodes was measured in the wavelength region between 600 and 850 nm. Anisotropy effects in the van der Waals plane were observed by means of linearly polarized light at normal incidence to the (001) plane of ReS2 single crystals. The anisotropy in quantum efficiency reaches its maximum at λ=627 nm and therefore, ReS2 devices are well suited for detecting the angle of polarization in experiments using a HeNe laser. At wavelengths above 750 nm the sign in polarization quantum efficiency changes due to various optical transitions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354268
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  • 7
    Electronic Resource
    Electronic Resource
    Thin film semiconductor deposition on free-standing ZnO columns (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2575-2577 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the deposition of a-Si:H on thin films of free-standing single crystalline ZnO columns. The ZnO columns have a height of several μm and a diameter between 100 and 200 nm. The ZnO films are prepared in electrodeposition and have considerable potential for use in photoelectric thin film devices. Morphology, electronic parameters, and basic optical behavior, such as reflectance and light trapping efficiency, are reported. Amorphous silicon is deposited on the columns as a continuous smooth film with conformal coverage. Some possibilities of using these films in devices are discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1319187
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  • 8
    Electronic Resource
    Electronic Resource
    High-resolution work function imaging of single grains of semiconductor surfaces (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2979-2981 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The size reduction of modern electronic devices creates a growing demand for characterization tools to determine material properties on a nanometer scale. The Kelvin probe force microscope is designed to obtain laterally resolved images of the sample's work function. Using a setup in ultrahigh vacuum, we were able to distinguish work function variations for differently oriented crystal facets of single grains on a semiconductor surface. For the tetragonal solar cell material CuGaSe2 the experiments demonstrate differences as low as 30 meV between (102) and (111) oriented surfaces and up to 255 meV between (1¯1¯2¯) and (110) surfaces. This influences the band bending of solar cell heterostructures and consequently also the solar power conversion efficiency. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1471375
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