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  • Articles  (202)
  • Other Sources  (23)
  • 2020-2024  (6)
  • 1995-1999  (138)
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  • Articles  (202)
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  • 1
    Publication Date: 2023-01-19
    Description: The lithospheric architecture of passive margins is crucial for understanding the tectonic processes that caused the breakup of Gondwana. We highlight the evolution of the South Atlantic passive margins by a simple thermal lithosphere‐asthenosphere boundary (LAB) model based on onset and cessation of rifting, crustal thickness, and stretching factors. We simulate lithospheric thinning and select the LAB as the T = 1,330°C isotherm, which is calculated by 1D advection and diffusion. Stretching factors and margin geometry are adjusted to state‐of‐the‐art data sets, giving a thermal LAB model that is especially designed for the continental margins of the South Atlantic. Our LAB model shows distinct variations along the passive margins that are not imaged by global LAB models, indicating different rifting mechanisms. For example, we model up to 200 km deep lithosphere in the South American Santos Basin and shallow lithosphere less than 60 km in the Namibe Basin offshore Africa. These two conjugate basins reflect a strong asymmetry in LAB depth that resembles variations in margin width. In a Gondwana reconstruction, we discuss these patterns together with seismic velocity perturbations for the Central and Austral Segments of the margins. The shallow lithosphere in the Namibe Basin correlates with signatures of the Angola Dome, attributed to epeirogenic uplift in the Neogene, suggesting an additional component of post‐breakup lithospheric thinning.
    Description: Plain Language Summary: Passive margins mark the transition zone from a continent to the ocean without being an active boundary of tectonic plates. They are typical for all continents on the globe. In the South Atlantic, the passive margins are located adjacent to the eastern coastline of South America and the western coastline of Africa. Studying the architecture of passive margins is essential for understanding plate tectonic history of the earth because they define how the continents once fitted together and how they broke apart. Passive margin segments on opposite sides of an ocean form so called conjugate margin pairs. Most geophysical studies of passive margins focus on the first few kilometers under the surface. However, their deeper extension to the base of the rigid shell of the earth, known as lithospheric thickness, is to a large extent unknown. Based on a simple temperature model, we find that the lithospheric thickness is highly variable and shows large variations along the South Atlantic passive margins. These differences are associated with the extension of conjugate margin pairs: where one margin is narrower than the conjugate, its lithospheric thickness is greater. This asymmetry indicates that the geodynamic processes, causing the breakup of the two continents, must have been asymmetric as well. Offshore Angola, the lithosphere is modeled shallow and matches with relatively young rock signatures. This suggests additional tectonic activity on the African side after the breakup between the two continents occurred.
    Description: Key Points: A simple thermal lithosphere‐asthenosphere boundary (LAB) model for the South Atlantic passive margins has been developed. The LAB model shows distinct variations along the margins that correlate with margin widths. Conjugate margin pairs reflect an asymmetry in LAB depth patterns that are locally related to post‐breakup lithospheric thinning.
    Description: Deutsche Forschungsgemeinschaft http://dx.doi.org/10.13039/501100001659
    Description: https://doi.org/10.5880/GFZ.1.3.2020.006
    Description: https://www.earthbyte.org/webdav/ftp/Data_Collections/Muller_etal_2019_Tectonics/
    Description: https://doi.org/10.5281/zenodo.7074000
    Description: https://earthbyte.org/webdav/ftp/Data_Collections/Haas_etal_2022_Tectonics/
    Keywords: ddc:551.13 ; passive margins ; South Atlantic ; thermal LAB ; rift asymmetry ; Gondwana
    Language: English
    Type: doc-type:article
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1196-1201 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Packaging-induced strain is studied in high-power semiconductor lasers by a noninvasive optical technique. Fourier-transform photocurrent measurements with intentionally strained laser array devices for 808 nm emission reveal spectral shifts of optical transitions within the active region. These shifts by up to 10 meV serve as a measure for the strain status within the active layer of the devices and are compared with model calculations. For different packaging architectures we quantify the strain portion which is transmitted to the optically active region of the semiconductor device. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6135-6144 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: New experimental and theoretical results on TE/TM bistability in 1.3 μm ridge-waveguide InGaAsP/InP bulk lasers at room temperature are presented. Measured polarization resolved light power–current (P–I) characteristics as well as lateral near- and far-field patterns are compared with results from a theoretical model based on the paraxial wave equations for TE- and TM-polarized modes and the diffusion equation for the carrier distribution. The model was numerically evaluated by use of the beam propagation method. The observed TE/TM bistability is explained by the interplay of three different effects: (i) Tensile stress of about 109 dyn/cm2 promotes the TM gain strongly enough to compete with the TE mode. (ii) Improved TM waveguiding due to an enhancement of the effective refractive index near the beam axis caused by carrier depletion with increasing current leads to the onset of TM lasing and TE/TM switching. (iii) The TE/TM transition is accompanied by an abrupt increase of spatial hole burning in the lateral carrier distribution. Because of this nonlinear effect, a lower current is needed to switch the laser back to TE, giving rise to a hysteresis loop in the P–I characteristics and to TE/TM polarization bistability. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2064-2069 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Light emission from a ridge waveguide 1.3 μm InGaAsP/InP semiconductor laser pumped both electrically and optically was analyzed by polarization- and time-resolved measurements. The electric and the optical excitation was realized with a dc-bias current and with 150 ps pulses from a Q-switched Nd-YAG laser at 1.064 μm wavelength, respectively. The pump light was introduced into the InGaAsP/InP laser through a window opened in the substrate gold contact. The steady-state P–I characteristics of the semiconductor laser exhibited a transition from TM- to TE-polarized light emission if the injection current surpasses a certain value that depends on the heatsink temperature. Depending on the dc-bias current and the optical pulse power, a variety of different emission characteristics of the semiconductor laser were observed: pure TE or TM pulsations, in combination with a background cw emission in some cases; simultaneous emission of TE and TM pulses and switching between TM and TE emission states with switching times as short as 30 ps. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 308-312 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Decays of the diffraction efficiency of gratings written in Fe:LiNbO3 have been studied in connection with photorefractive fixing. Measurements have been carried at five different temperatures within the range of interest in photorefractive fixing, 144–168 °C. The decay curves are nonexponential and can be fitted to a sum of three simple exponential components, whose effective activation energies and preexponential factors have been determined. The dependence of the last exponential component on the grating period Λ has been measured and a 1/Λ2 law has been found. The decay constants have also been found to depend on the time the crystal is kept at the setting temperature before writing the grating. The difficulties for establishing a model taking into account the occurrence of several sites for protons in LiNbO3 are discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Analytical chemistry 20 (1948), S. 493-494 
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3908-3910 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermally induced strain caused by device packaging is studied in high-power semiconductor lasers by a noninvasive technique. Fourier-transform photocurrent measurements with intentionally strained laser array devices for 808 nm emission reveal spectral shifts of quantum-confined optical transitions in the optical active region. These shifts by up to 7 meV serve as a measure for strain and are compared with model calculations. For a given packaging architecture, about one quarter of the mounting-induced strain is transferred to the quantum-well region of the device. Spatially resolved measurements demonstrate a lateral strain gradient in the devices. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 391-393 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The critical current of a Nb–InGaAs/InP Josephson junction is increased stepwise by light exposure. Shubnikov–de Haas effect measurements under illumination show that the increase of the critical current originates from photogenerated electrons in the quantum well. A further enhancement of the critical current is gained under continuous illumination. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 99 (1995), S. 16264-16275 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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