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Direct spectroscopic measurement of mounting-induced strain in high-power optoelectronic devices (1998)

Tomm, J. W. ; Müller, R. ; Bärwolff, A. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 73 (1998), S. 3908-3910

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Thermally induced strain caused by device packaging is studied in high-power semiconductor lasers by a noninvasive technique. Fourier-transform photocurrent measurements with intentionally strained laser array devices for 808 nm emission reveal spectral shifts of quantum-confined optical transitions in the optical active region. These shifts by up to 7 meV serve as a measure for strain and are compared with model calculations. For a given packaging architecture, about one quarter of the mounting-induced strain is transferred to the quantum-well region of the device. Spatially resolved measurements demonstrate a lateral strain gradient in the devices. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.122932

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