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  • Articles  (3)
  • American Institute of Physics (AIP)  (3)
  • 2020-2023
  • 1985-1989  (3)
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  • Articles  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    Iron-doped semi-insulating InP grown by chemical beam epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2336-2338 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have prepared Fe-doped InP epilayers by chemical beam epitaxy using a thermal atomic Fe beam. Epilayers having high resistivities ((approximately-greater-than)107 Ω cm) were obtained over a wide range of Fe concentrations. Resistivities as high as 1.3×108 Ω cm have been obtained. Such resistivity is almost equal to the theoretical value of 1.37×108 Ω cm that we estimate for intrinsic InP. The current-voltage characteristics exhibit both an ohmic and a space-charge-limited regime, and are consistent with the theory of single-carrier injection into a trap-free insulator. Pinning of the Fermi level near midgap by Fe-related deep levels is the mechanism by which the epilayer is made highly resistive. At room temperature, these traps are apparently deep enough that the carrier emission rate is negligible.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101120
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  • 2
    Electronic Resource
    Electronic Resource
    Quantum shift of the optical absorption edge in ultrathin amorphous hydrogenated germanium (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 264-266 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical absorption coefficient in ultrathin (∼10 A(ring)) hydrogenated amorphous germanium (a-Ge:H) layers deposited on hydrogenated amorphous silicon layers was determined by in situ reflectivity measurements. The decrease in the absorption coefficient in the ultrathin a-Ge:H layers, compared to that of thick films, is explained by an upward shift in the conduction band edge due to quantum confinement of electrons with effective mass of 0.4m0.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98468
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of sputtering parameters on the magnetic properties of Mo-Permalloy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5670-5672 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sputtered Mo-Permalloy thin film is expected to possess great potentiality in soft magnetic properties which can be realized chiefly by controlling sputtering conditions. The effects of sputtering parameters, such as argon pressure, bias voltage, and preheating temperature, on the magnetic properties, of FeNiMo sputtered films have been investigated. The magnetic anisotropy field Hk was found to decrease with the raising preheating temperature while coercivity Hc presented the contrary trend. High effective permeability can be acquired at low argon pressure, adequate preheating temperature, and bias voltage. Close relationships among effective permeability, anisotropy field, magnetostriction coefficient, and half-height width Δθ50 were found. Annealing is available for increasing effective permeability.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342269
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