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Quantum shift of the optical absorption edge in ultrathin amorphous hydrogenated germanium (1987)

Yang, L. ; Abeles, B.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 51 (1987), S. 264-266

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The optical absorption coefficient in ultrathin (∼10 A(ring)) hydrogenated amorphous germanium (a-Ge:H) layers deposited on hydrogenated amorphous silicon layers was determined by in situ reflectivity measurements. The decrease in the absorption coefficient in the ultrathin a-Ge:H layers, compared to that of thick films, is explained by an upward shift in the conduction band edge due to quantum confinement of electrons with effective mass of 0.4m0.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.98468

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