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  • 1
    Electronic Resource
    Electronic Resource
    Numerical study on the dynamics of Z-pinch carbon plasma (1996)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 3 (1996), S. 1340-1347 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamics of Z-pinch carbon plasma has been investigated using one-dimensional Lagrangian code. This code calculates the single-fluid, two-temperature magnetohydrodynamic (MHD) equations coupled with an ionization balance equation. The motion of plasma column and shock front is studied in comparison with the analytical models such as the snowplow and the slug model. The energy flow during the pinch is also studied. During the pinch phase, the temperature increases due to shock heating and adiabatic heating. After the pinch the plasma is cooled down rapidly due to adiabatic expansion which can lead to an adequate condition for recombination Extreme-Ultra-Violet (XUV) lasers. The effect of the radiative trapping of resonance line on hydrodynamics and population kinetics is also investigated. The calculation shows that there can exist a high gain on hydrogen-like C VI Balmer-α line (18.2 nm). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.871787
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  • 2
    Electronic Resource
    Electronic Resource
    A beamline for macromolecular crystallography at the Advanced Light Source : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1738-1740 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A beamline for macromolecular crystallography has been designed for the ALS. The source will be a 37-pole wiggler with a 2-T on-axis peak field. The wiggler will illuminate three beamlines, each accepting 3 mrad of horizontal aperture. The central beamline will primarily be used for multiple-wavelength anomalous dispersion measurements in the wavelength range from 4 to 0.9 A(ring). The beamline optics will comprise a double-crystal monochromator with a collimating premirror and a double-focusing mirror after the monochromator. The two side stations will be used for fixed-wavelength experiments within the wavelength range from 1.5 to 0.95 A(ring). The optics will consist of a conventional vertically focusing cylindrical mirror followed by an asymmetrically cut curved-crystal monochromator. This paper presents details of the optimization of the wiggler source for crystallography, gives a description of the beamline configuration, and discusses the reasons for the choices made. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145835
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  • 3
    Electronic Resource
    Electronic Resource
    Thermal stability of sulfur-treated InP investigated by photoluminescence (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4052-4057 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of sulfur (S) treatments on InP is investigated by low-temperature photoluminescence (PL) measurements. For both n- and p-InP, the PL intensity is observed to increase about four times in magnitude if the scattering by the S overlayer is relatively small. Some PL bands are observed to disappear after S treatments and then reappear if the S-treated surface is heat treated at 220 °C in a vacuum of 10−3 Torr. By observing their dependence on the excitation power density, the doping level of the samples, and measurement temperature, these PL bands are ascribed to the optical transitions via surface states. Our results thus indicate that the S-treated InP surface may not be stable at a subsequent processing temperature of about 250 °C. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363366
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  • 4
    Electronic Resource
    Electronic Resource
    Nondestructive propagation loss and facet reflectance measurements of GaAs/AlGaAs strip-loaded waveguides (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6318-6320 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A modified Fabry–Perot resonance technique using a single cavity was proposed to obtain the propagation loss of the optical waveguide. The propagation loss as well as the facet reflectance were measured without sequential cleavage for a GaAs/AlGaAs strip-loaded waveguide based on the contrast ratios of the reflected and transmitted interference patterns. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360729
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  • 5
    Electronic Resource
    Electronic Resource
    Stability of sulfur-treated InP surface studied by photoluminescence and x-ray photoelectron spectroscopy (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6986-6991 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The degradation behavior of the sulfur-treated InP surface at relatively low temperature has been investigated with x-ray photoelectron and photoluminescence (PL) spectroscopy. The results showed that the treated surfaces were oxidized to In2O3, InPO3, and InPO4 at 250 °C and in a vacuum of 10−3 Torr for 20 min. As the holding time for S-treated InP under a vacuum of 10−3 Torr increased, the PL peak caused by the band edge transition decreased without the formation of oxides. It was therefore suggested that the decrease of the PL intensity for S-treated InP is only related to the generation of phosphorous vacancies at the surface, not to oxide formation. The usefulness of a thin S overlayer on III–V semiconductors was also discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365263
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  • 6
    Electronic Resource
    Electronic Resource
    Low-energy electron point source microscope with position-sensitive electron energy analyzer (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 4304-4307 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A low-energy electron point source microscope equipped with a position-sensitive energy analyzer is constructed. A nanometer-sized feature can be zoomed in and its energy-loss spectrum can be measured with a retarding field-type energy analyzer mounted in front of the imaging screen. The geometric and the electronic structures of carbon nanotubes are measured with the present system. Interference between the scattered and the transmitted electron beams through the carbon nanotubes is observed using an atomically sharp field emitter. The electron energy-loss spectrum shows two prominent peaks at ∼7 and 16–17 eV, which are identified as the π plasmon and (π+σ) surface-plasmon peaks. This result is consistent with the measurements of high-energy electron energy-loss spectroscopy as well as the theoretical calculation. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150070
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  • 7
    Electronic Resource
    Electronic Resource
    Carrier lifetimes in dielectric cap disordered GaAs/AlGaAs multiple quantum well with SiN capping layers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3438-3440 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time resolved photoluminescence (PL) characteristics of a SiN cap disordered GaAs/AlGaAs multiple quantum well (MQW) structure exhibit a decrease in carrier lifetime in conjunction with an increase in quantum well disordering (QWD) as the SiN capping layer thickness is increased. The decrease in carrier lifetime is attributed to enhanced carrier trapping due to the defects introduced during dielectric cap quantum well disordering and the relaxation of the momentum conservation during radiative recombination by QWD. Potential applications of these effects on high speed optical devices such as laser diodes (LD's) and optical modulators are discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115272
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  • 8
    Electronic Resource
    Electronic Resource
    Tunnel diodes fabricated from CdSe nanocrystal monolayers (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 317-319 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A parallel approach for fabricating nanocrystal-based semiconductor–insulator–metal tunnel diodes is presented. The devices consisted of a Au electrode, a monolayer of 38 Å CdSe nanocrystals, an insulating bilayer of eicosanoic acid (C19H39CO2H), and an Al electrode. Each device was approximately 100 μm2. Conductance measurements at 77 K reveal strong diode behavior and evidence of Coulomb blockade and staircase structure. A single barrier model was found to reproduce the electronic characteristics of these devices. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123035
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of cyclic process on the {100}-oriented texture growth of diamond film (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2184-2186 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The {100}-oriented texture growth of diamond film on (100) Si substrates (1×1 cm2) has been achieved by a three-step procedure (carburization→nucleation→growth) in a microwave- plasma-enhanced chemical vapor deposition (MPECVD) system. The surface morphology is found to be strongly affected by the cyclic process applied during the nucleation step. Furthermore, the density of {100}-oriented grains as well as the coverage area are enhanced by the application of the cyclic process merely during the nucleation step. We also observed the increase in the nucleation density by the cyclic process. This increase may be the origin for the increase in the density of the {100}-oriented grains. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117159
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  • 10
    Electronic Resource
    Electronic Resource
    Photophysics of size-selected InP nanocrystals: Exciton recombination kinetics (1996)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 105 (1996), S. 7957-7963 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We report here on the size-dependent kinetics of exciton recombination in a III–V quantum dot system, InP. The measurements reported include various frequency dependent quantum yields as a function of temperature, frequency dependent luminescence decay curves, and time-gated emission spectra. This data is fit to a three-state quantum model which has been previously utilized to explain photophysical phenomena in II–VI quantum dots. The initial photoexcitation is assumed to place an electron in a (delocalized) bulk conduction band state. Activation barriers for trapping and detrapping of the electron to surface states, as well as activation barriers for surface-state radiationless relaxation processes are measured as a function of particle size. The energy barrier to detrapping is found to be the major factor limiting room temperature band-edge luminescence. This barrier increases with decreasing particle size. For 30 A(ring) particles, this barrier is found to be greater than 6 kJ/mol—a barrier which is more than an order of magnitude larger than that previously found for 32 A(ring) CdS nanocrystals. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.472703
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