ISSN:
1572-817X
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As strip-loaded waveguides were fabricated using a broad-beam electron cyclotron resonance (ECR) ion source. It was found that a very smooth etching profile can be obtained by ECR ion etching and the etching rate of Al0.3Ga0.7As is 70 nm min-1. The propagation losses of strip-loaded type III–V compound semiconductor waveguides with various etching depths were studied by the Fabry-Perot cavity method. It was observed that the reflectance at the cleavage increases slightly with etching depth for TE polarization. The propagation loss is measured as 1.5 dB cm-1 for etching depth of 0.7 μm, less than 1 dB cm-1 for 0.8 μm, and 3.5 dB cm-1 for 1.1 μm.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00563571
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