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  • 2020-2022  (32)
  • 1995-1999  (147)
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  • 1
    Electronic Resource
    Electronic Resource
    Free excitonic transitions in GaN, grown by metal-organic chemical-vapor deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7001-7004 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamic processes of the free excitonic transitions in GaN grown by metal-organic chemical-vapor deposition (MOCVD) have been studied. The recombination lifetimes of the A and B excitons have been measured at different temperatures and excitation intensities, from which radiative recombination lifetimes of about 0.35 and 0.3 ns for the A and B excitons, respectively, have been obtained. An increase in excitation power has resulted in a drastic enhancement in the radiative decay rate as well as in the exciton photoluminescence quantum yield, suggesting the excitonic transitions may provide gain for laser actions in GaN. The high quality as well as high purity of the investigated MOCVD sample has been demonstrated by the observations of (1) the free A- and B-excitonic transitions, (2) excited states of the free excitons, (3) narrow free excitonic emission linewidths (1.7 meV at 10 K), (4) low electron concentration, and (5) high electron mobilities (∼600 cm2/V s). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362448
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  • 2
    Electronic Resource
    Electronic Resource
    Magnetic and magnetotransport properties of intermetallic SmMn2Si2 : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 5534-5536 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic properties of naturally layered intermetallic compound SmMn2Si2 with textured structure have been studied. There exist a ferromagnetic transition at 35 K and two antiferromagnetic transitions at 120 and 230 K. The antiferromagnetic state below 230 K exhibits different magnetoresistance, with a negative magnetoresistance of 3%–4% for current I applied perpendicular to the c axis and with a positive magnetoresistance effect of about 4%–6% for current I parallel to the c axis. The observed magnetoresistance is likely to be related to magnetovolume effects. In the ferromagnetic state, a positive magnetoresistance with a maximum increase of 22% under an applied field of 5 T is observed at 4 K, and both H ⊥ I and H (parallel) I configurations show positive magnetoresistance. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364594
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  • 3
    Electronic Resource
    Electronic Resource
    Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 425-427 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a room-temperature study of the well-width-dependent carrier lifetimes in InGaN single-quantum wells. At room temperature, carrier recombination was found to be dominated by interface-related nonradiative processes. The dominant radiative recombination at room temperature was through band-to-band free carriers. For the sample grown at a higher growth rate, we observed a longer luminescence lifetime, which was attributed to an improved quantum well interface. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119568
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  • 4
    Electronic Resource
    Electronic Resource
    Femtosecond studies of carrier dynamics in InGaN (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2004-2006 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrafast carrier dynamics in In0.16Ga0.84N were investigated using femtosecond transient transmission measurements. We observed a fast initial carrier cooling on a time scale of 500 fs followed by a slow relaxation process which persisted longer than 5 ps due to a hot phonon effect. Band gap renormalization induced transient absorption was observed using a probe photon energy 300 meV above the band edge. These results were compared to a model based on the numerical resolution of the carrier Boltzmann equations. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118803
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  • 5
    Electronic Resource
    Electronic Resource
    High transconductance heterostructure field-effect transistors based on AlGaN/GaN (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 794-796 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the fabrication and characterization of Al0.15Ga0.85N/GaN heterostructure field-effect transistors (HFETs) with transconductance as high as 120 mS/mm and saturated current density of 0.35 A/mm for a device with a gate length and width of 1 and 100 μm. This represents one of the best results for such device. A comparison of the maximum transconductance of devices on wafers with different channel conductance is presented to analyze the factors limiting the performance. Our data indicates the series resistance between the source and drain to be the limiting factor for the maximum dc transconductance. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117894
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  • 6
    Electronic Resource
    Electronic Resource
    InGaN-GaN based light-emitting diodes over (111) spinel substrates (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 369-370 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we report the deposition of high quality GaN-InGaN double-heterostructure pn junctions over (111) spinel substrates using low-pressure metalorganic chemical vapor deposition. A ten-period undoped GaN-In0.1Ga0.9N multiple quantum well was used for the active region. Mesa-type light-emitting diode (LED) structures were fabricated which under forward bias exhibited only strong band-edge electroluminescence. The spectral emission was centered at 385 nm and had a linewidth of 15 nm. This is similar to what is measured for similar LED structures over sapphire substrates. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118063
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  • 7
    Electronic Resource
    Electronic Resource
    Local electron field emission characteristics of pulsed laser deposited diamondlike carbon films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3504-3506 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Local electron field emission properties of diamondlike carbon (DLC) films were measured by a probe method in 1 atmosphere ambient pressure, using the modified scanning tunneling microscopic (STM) system, and the diode method. In the STM probe method, the field emission was turn on at a low bias as +2.67 V. A large emission current of 40 nA was attained at +7 volt bias voltage and the emission current density was estimated as Jt=5 A/cm2. By contrast, the current–voltage (I–V) characteristics of the same DLC films measured by diode method in 10−6 Torr ambient pressure revealed that the electron field emission was produced for a 13.2 V/μm electric field, and a high emission current density of J=160 μA/cm2 was obtained for a E=20 V/μm electric field. The geometrical enhancement factor (α), evaluated from the Fowler–Nordheim plot was around α=30, which is larger than what would be expected from a planar surface. This can be interpreted as the evidence that electrons are emitted locally from spherical SP3 clusters. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117226
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  • 8
    Electronic Resource
    Electronic Resource
    Gain spectra and stimulated emission in epitaxial (In,Al) GaN thin films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3384-3386 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We measured the emission of (In,Al) GaN films under high intensity optical pumping both in the direction parallel and perpendicular to the film growth. In the edge emission geometry we determine the gain magnitude from the variable stripe length method. We use the spontaneous emission collected perpendicular to the layer plane to calculate the spectral dependence of the gain. Finally, we compare the emission spectra with those obtained for high quality GaAs thin films and find that the observation of a stimulated emission peak perpendicular to the nitride layer plane is predominantly due to scattering of the in-plane stimulated emission. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117267
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  • 9
    Electronic Resource
    Electronic Resource
    Deposition of high quality wurtzite GaN films over cubic (111) MgAl2O4 substrates using low pressure metalorganic chemical vapor deposition (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1129-1131 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the deposition of high quality single-crystal wurtzite GaN films on cubic (111) spinel (MgAl2O4) substrates. The room-temperature electron mobility and the optically pumped stimulated emission threshold for these films are nearly identical to those of films deposited on basal plane sapphire. Using cross sectional high resolution TEM we have determined the following orientation relationship between the film and the substrate: [0001]GaN//[111]MgAl2O4 and [112¯0]GaN//[110]MgAl2O4. This should provide a common cleavage plane for (111) spinel and the wurtzite GaN films over it. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115735
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  • 10
    Electronic Resource
    Electronic Resource
    Radiative recombination lifetime measurements of InGaN single quantum well (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1936-1938 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present results from a time-resolved study of radiative recombination in InGaN quantum wells. The sample was grown by atmospheric pressure metal-organic chemical-vapor deposition. Time-resolved photoluminescence measurements were performed from 7 K up to room temperature. The low temperature radiative lifetime was measured to be on the order of 250 ps at a generated carrier density of 1012 cm−2. The time-resolved measurements show a bimolecular recombination characteristic. At 300 K, we observed a lifetime of 130 ps which, to the best of our knowledge, is the longest lifetime reported for any III–V nitride at room temperature. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117627
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