Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
61 (1992), S. 2680-2682
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
InxGa1−xAs/GaAs heteroepitaxial layers, having various compositions and thicknesses, have been analyzed using the high resolution x-ray diffraction technique which has revealed that the residual strain in the epilayers is strongly dependent on both the epilayer composition as well as thickness. However, published theoretical models concerning residual strain in InxGa1−xAs/GaAs epilayers suggest that the extent of relaxation is independent of epilayer composition. In this letter, we present an empirical model based on our findings which can be used to accurately predict the extent of lattice relaxation in InxGa1−xAs/GaAs epilayers which includes the influence of epilayer composition.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.108107
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