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  • Blackwell Publishing Ltd  (24)
  • American Institute of Physics (AIP)  (9)
  • 2020-2021
  • 2000-2004  (7)
  • 1995-1999  (14)
  • 1985-1989  (11)
  • 1960-1964  (1)
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Year
  • 1
    Electronic Resource
    Electronic Resource
    An apparatus for fabrication of optical waveguides by electromigration (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 4014-4016 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present an apparatus for fabricating ion exchanged glass waveguides with reproducible characteristics. It consists of a vertical furnace with a uniform temperature zone, which is flat to within 1 °C over the sample length, a silica crucible for containing molten salt, a metallic sample holder made of either aluminum or stainless steel, and a motor-driven sample lowering system. The time and temperature are accurately controlled to produce waveguides of desired index profiles. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148375
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  • 2
    Electronic Resource
    Electronic Resource
    Effects of Fluids on the Simulated Clinical-Dental Machining of a Glass Ceramic (2004)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of the American Ceramic Society 87 (2004), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Effects of fluids on material removal rate, chipping damage, and surface roughness in the simulated clinical-dental machining of a dental-type glass ceramic were investigated. Significant differences in removal rate were obtained among the fluids investigated, but only a 4 wt% boric acid solution gave a higher removal rate than conventionally used water. Chipping damage was substantially lower for the boric acid and an oil-emulsion coolant compared with other fluids tested. Surface roughness was independent of the fluids used. The results indicate that improvement can be achieved in both material removal rate and machining damage by the appropriate selection of coolant chemistry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1551-2916.2004.00173.x
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  • 3
    Electronic Resource
    Electronic Resource
    NATIONAL INCOME ESTIMATION IN JORDAN (1963)
    Oxford, UK : Blackwell Publishing Ltd
    Review of income and wealth 1963 (1963), S. 0 
    Details
    ISSN: 1475-4991
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Economics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1475-4991.1965.tb01020.x
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  • 4
    Electronic Resource
    Electronic Resource
    Non-contacting measurements of photocarrier lifetimes in bulk- and polycrystalline thin-film Si photoconductive devices by photothermal radiometry (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5332-5341 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser-induced and frequency-scanned infrared photothermal radiometry was applied to a crystalline-Si photoconductive device, and to polysilicon thin-film photoconductors deposited on oxidized Si substrates by an LPCVD method. A detailed theoretical model for the radiometric signal was developed and used to measure the free photoexcited carrier plasma recombination lifetime, electronic diffusivity and surface recombination velocity of these devices, with the simultaneous measurement of the bulk thermal diffusivity. A trade-off between detectivity/gain and frequency-response bandwidth was found via the lifetime dependence on the wafer background temperature rise induced by Joule-heating due to the applied bias. This effect was most serious with the bulk-Si device, but was limited by the high resistivity of the LPCVD thin-film devices. In the case of the bulk-Si device, the results of photothermal radiometry were compared with, and corroborated by, frequency-scanned photocurrent measurements. More sophisticated analysis was shown to be required for the interpretation of the polysilicon photoconductor frequency-responses, perhaps involving the fractal nature of carrier transport in these grain-structured devices. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363472
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  • 5
    Electronic Resource
    Electronic Resource
    Spin-glass behavior of cubic Tb0.3Y0.7Ag: A scaling of the thermoremanence (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4340-4342 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetization-versus-temperature (M-vs-T) measurements in a fixed field on cubic pseudobinary Tb0.3Y0.7Ag show that M for increasing and then decreasing T bifurcates at the antiferromagnetic Néel point (TN=36 K), where M is maximum. The resulting thermoremanence (MR), which decays very slowly with time, diminishes with increasing T and vanishes at TN. Thus, the long-range antiferromagnetism appears to coexist with spin-glass ordering. Measurements of MR with increasing T were also made for different cooling fields (Hc1) The changes of MR with Hcl and T are found to reduce to a universal relationship between the temperature-normalized quantities, m=MR/M0(T) and h=Hcl /H0(T). Setting both the initial slope of m vs h and the saturation m at high h equal to unity, we determine that M0(T)=M0(0) exp (−T/T0), with M0(0)=0.82μB/Tb atom and T0=4.3 K, and that H0(T) varies analogously, with H0(0)=225 kOe and the same T0. A similar temperature scaling of MR vs Hcl , with similar exponential forms for M0(T) and H0(T), has been deduced earlier for Ag-Mn and other canonical spin glasses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340194
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  • 6
    Electronic Resource
    Electronic Resource
    The MD Shell and its use to develop Dust-Expert (1995)
    Oxford, UK : Blackwell Publishing Ltd
    Expert systems 12 (1995), S. 0 
    Details
    ISSN: 1468-0394
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Computer Science
    Notes: Abstract: In this paper we describe TheMD (The Methods Designer) shell and its use in the development of an expert system, known as Dust-Expert, for the relief of dust explosions. We begin by providing the motivation for the development of TheMD Shell by evaluating a prototype implementation of Dust-Expert using a conventional shell. This evaluation is carried out in terms of the transparency, reliability and extensibility of the system.The lessons learned from this evaluation have led to the development of TheMD Shell. We describe the main features of the shell which include more appropriate schemas, more complete explanation capabilities, a ranking scheme and equation-solving capabilities. We illustrate the use of the schemas and the importance of the equation-solving capabilities by examples from the domain of dust explosions. We also provide a formal specification of the ranking scheme that we adopt. We conclude by highlighting the benefits of our approach in comparison to the usual process of developing knowledge-based systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1468-0394.1995.tb00112.x
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  • 7
    Electronic Resource
    Electronic Resource
    Persistent photoconductivity in thin undoped GaInP/GaAs quantum wells (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 171-173 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Persistent photoconductivity has been observed at low temperatures in thin, unintentionally doped GaInP/GaAs/GaInP quantum wells. The two-dimensional electron gas was studied by low field Hall and Shubnikov–de Haas effects. After illumination with red light, the electron concentration increased from low 1011 cm−2 to more than 7×1011 cm−2 resulting in an enhancement of both the carrier mobility and the quantum lifetime. The persistent photocarriers cannot be produced by DX-like defects since the shallow dopant concentration in the GaInP layers is too low to produce the observed concentration. We suggest that the persistent carriers are produced by photoionization of deep intrinsic donors in the GaInP barrier layer. We also report observation of a parallel conduction path in GaInP induced by extended illumination. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113553
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  • 8
    Electronic Resource
    Electronic Resource
    A simple velocity model for low-pressure metalorganic chemical vapor deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 869-871 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new simple transport model is used to describe the dependence of the electrical characteristics of the epitaxial layer on the growth parameters in low-pressure metalorganic chemical vapor deposition. The important parameters of this model are the mean velocity of the gases and the [V]/[III] ratio. Undoped GaAs epitaxial layers are prepared at various operating pressures. A semi-empirical correlation relating the reactor pressure and flow rate is established that dictates the operating conditions for a single set of film properties. This enables growth of a material with constant characteristics while pressure can be varied. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115532
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  • 9
    Electronic Resource
    Electronic Resource
    Se chemical passivation and annealing treatment for GaAs Schottky diode (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2125-2127 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Se chemical passivation [(NH4)2S+Se] for GaAs Schottky diodes is presented. We have found that our (NH4)2S+Se passivated Schottky diodes have more than one order of magnitude higher forward current density than the (NH4)2Sx passivated ones. In rapid thermal annealing treatment, an initial decrease and then increase of forward current density for (NH4)2Sx passivated diodes is observed. For the (NH4)2S+Se and (NH4)OH treated diodes, a steady decrease of Schottky barrier height with increased annealing temperature is observed. With or without annealing treatment, the (NH4)2S+Se passivated diodes have the lowest barrier height. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113924
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  • 10
    Electronic Resource
    Electronic Resource
    High-efficiency and high-resolution fiber-optic probes for near field imaging and spectroscopy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2886-2888 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that fiber-optic probes with an intermediate section followed by a rapidly tapering tip lead to transmission efficiency enhancement of better than four orders-of-magnitude at 60 nm tip diameter and more than five orders-of-magnitude at smaller than 40 nm tip diameter over typical taffy-pulled fiber probes. Our highest resolution probes have a tip diameter of 30 nm with a transmission efficiency of 0.02%, and as an example we image tobacco mosaic virus with a resolution better than 35 nm. The probes are made in a two-step process involving pulling and then etching that permits both high efficiency and control of the mechanical resonance properties. The efficiency is enhanced by reducing the distance that the electromagnetic mode travels in the cut-off mode of the fiber probe. The higher resolution is achieved because sharper tips can be made through the etching process. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120206
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