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  • American Institute of Physics (AIP)
  • 2020-2023
  • 2020-2021
  • 2010-2014  (5)
  • 2000-2004  (1)
  • 1995-1999  (7)
  • 1965-1969
  • 1960-1964
  • 1925-1929
  • 1
    Electronic Resource
    Electronic Resource
    An apparatus for fabrication of optical waveguides by electromigration (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 4014-4016 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present an apparatus for fabricating ion exchanged glass waveguides with reproducible characteristics. It consists of a vertical furnace with a uniform temperature zone, which is flat to within 1 °C over the sample length, a silica crucible for containing molten salt, a metallic sample holder made of either aluminum or stainless steel, and a motor-driven sample lowering system. The time and temperature are accurately controlled to produce waveguides of desired index profiles. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148375
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  • 2
    Electronic Resource
    Electronic Resource
    Non-contacting measurements of photocarrier lifetimes in bulk- and polycrystalline thin-film Si photoconductive devices by photothermal radiometry (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5332-5341 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser-induced and frequency-scanned infrared photothermal radiometry was applied to a crystalline-Si photoconductive device, and to polysilicon thin-film photoconductors deposited on oxidized Si substrates by an LPCVD method. A detailed theoretical model for the radiometric signal was developed and used to measure the free photoexcited carrier plasma recombination lifetime, electronic diffusivity and surface recombination velocity of these devices, with the simultaneous measurement of the bulk thermal diffusivity. A trade-off between detectivity/gain and frequency-response bandwidth was found via the lifetime dependence on the wafer background temperature rise induced by Joule-heating due to the applied bias. This effect was most serious with the bulk-Si device, but was limited by the high resistivity of the LPCVD thin-film devices. In the case of the bulk-Si device, the results of photothermal radiometry were compared with, and corroborated by, frequency-scanned photocurrent measurements. More sophisticated analysis was shown to be required for the interpretation of the polysilicon photoconductor frequency-responses, perhaps involving the fractal nature of carrier transport in these grain-structured devices. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363472
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  • 3
    Electronic Resource
    Electronic Resource
    Persistent photoconductivity in thin undoped GaInP/GaAs quantum wells (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 171-173 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Persistent photoconductivity has been observed at low temperatures in thin, unintentionally doped GaInP/GaAs/GaInP quantum wells. The two-dimensional electron gas was studied by low field Hall and Shubnikov–de Haas effects. After illumination with red light, the electron concentration increased from low 1011 cm−2 to more than 7×1011 cm−2 resulting in an enhancement of both the carrier mobility and the quantum lifetime. The persistent photocarriers cannot be produced by DX-like defects since the shallow dopant concentration in the GaInP layers is too low to produce the observed concentration. We suggest that the persistent carriers are produced by photoionization of deep intrinsic donors in the GaInP barrier layer. We also report observation of a parallel conduction path in GaInP induced by extended illumination. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113553
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  • 4
    Electronic Resource
    Electronic Resource
    A simple velocity model for low-pressure metalorganic chemical vapor deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 869-871 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new simple transport model is used to describe the dependence of the electrical characteristics of the epitaxial layer on the growth parameters in low-pressure metalorganic chemical vapor deposition. The important parameters of this model are the mean velocity of the gases and the [V]/[III] ratio. Undoped GaAs epitaxial layers are prepared at various operating pressures. A semi-empirical correlation relating the reactor pressure and flow rate is established that dictates the operating conditions for a single set of film properties. This enables growth of a material with constant characteristics while pressure can be varied. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115532
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  • 5
    Electronic Resource
    Electronic Resource
    Se chemical passivation and annealing treatment for GaAs Schottky diode (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2125-2127 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Se chemical passivation [(NH4)2S+Se] for GaAs Schottky diodes is presented. We have found that our (NH4)2S+Se passivated Schottky diodes have more than one order of magnitude higher forward current density than the (NH4)2Sx passivated ones. In rapid thermal annealing treatment, an initial decrease and then increase of forward current density for (NH4)2Sx passivated diodes is observed. For the (NH4)2S+Se and (NH4)OH treated diodes, a steady decrease of Schottky barrier height with increased annealing temperature is observed. With or without annealing treatment, the (NH4)2S+Se passivated diodes have the lowest barrier height. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113924
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  • 6
    Electronic Resource
    Electronic Resource
    High-efficiency and high-resolution fiber-optic probes for near field imaging and spectroscopy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2886-2888 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that fiber-optic probes with an intermediate section followed by a rapidly tapering tip lead to transmission efficiency enhancement of better than four orders-of-magnitude at 60 nm tip diameter and more than five orders-of-magnitude at smaller than 40 nm tip diameter over typical taffy-pulled fiber probes. Our highest resolution probes have a tip diameter of 30 nm with a transmission efficiency of 0.02%, and as an example we image tobacco mosaic virus with a resolution better than 35 nm. The probes are made in a two-step process involving pulling and then etching that permits both high efficiency and control of the mechanical resonance properties. The efficiency is enhanced by reducing the distance that the electromagnetic mode travels in the cut-off mode of the fiber probe. The higher resolution is achieved because sharper tips can be made through the etching process. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120206
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  • 7
    Electronic Resource
    Electronic Resource
    Equivalent-time sampling force microscopy using pulse position modulation method (2002)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 323-329 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This paper presents a homodyne pulse-sampling electrostatic force microscopy technique using a pulse position modulation method for the noncontact measurement of internal voltage waveforms in integrated circuits. The measurement system operates by monitoring the mechanical deflection of a micromachined probe as it responds to electric forces induced by the circuit voltage waveform. Although the mechanical response of typical probes used in such systems is limited to few kHz, measurement of high frequency repetitive waveforms is enabled by applying a high speed sampling pulse signal to the probe with the pulse position modulated at a rate below the probe mechanical resonance. This results in down conversion of the circuit induced electric force harmonics to within the probe mechanical response, thus allowing the measurement of high frequency signals. The proposed technique is modeled using Fourier analysis of the measurement system response, and is demonstrated by the measurement of a 0.8 Mbit/s digital pattern on a CMOS test pad. The performance of the measurement system is analyzed based on obtained measurements and simulated system response. An analysis of the method capabilities shows a measurement sensitivity of 13 mVrms/(square root of)Hz. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1430549
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  • 8
    Electronic Resource
    Electronic Resource
    Asymptotic study and weakly nonlinear analysis at the onset of Rayleigh–Bénard convection in Hele–Shaw cell (1995)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 7 (1995), S. 926-934 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The aim of this paper is the derivation of the Ginzburg–Landau equation [as introduced by A. C. Newell and J. A. Whitehead, J. Fluid Mech. 38, 279 (1969)] from the hydrodynamic equations for an infinite Hele–Shaw cell. The dimensional analysis and the asymptotic study allow one to distinguish two nonlinear formulations, each one depends on the order of magnitude of the Prandtl number. The first formulation corresponds to the case Pr=O(1) or Pr(very-much-greater-than)1, whereas the second corresponds to the case Pr=O(ε*2), where ε*(very-much-less-than)1 denotes the aspect ratio of the cell. Here a weakly nonlinear analysis is performed for the two formulations. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.868568
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  • 9
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    Dual-mode behavior of the complementary electric-LC resonators loaded on transmission line: Analysis and applications (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-08-27
    Description: This article presents an analysis of metamaterial resonators coupled with microstrip transmission line. The behavior of complementary electric-LC resonators loaded on a microstrip line is analyzed using the equivalent circuit model. In this paper, it is shown that a special type of these resonators show a dual-mode behavior when excited through the electromagnetic field around the microstrip transmission lines. The bandstop and bandpass configurations of these dual mode resonators loaded with microstrip lines are introduced and analyzed. Their potential applications are highlighted through designing a displacement sensor and a dual-mode bandpass filter prototypes.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 10
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    Hole mobility in Ge/Si core/shell nanowires: What could be the optimum? (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-12-09
    Description: Recent experimental works have shown that Ge/Si core/shell nanowires (NWs) are very attractive for nanoelectronics and for low-temperature quantum devices, thanks to the confinement of holes in the Ge core. Reported hole mobilities of the order of 200 cm 2 /V/s are promising for high-performance field-effect transistors. However, we demonstrate that mobilities more than ten times higher, up to 8000 cm 2 /V/s, could be reached in Ge/Si NWs. Atomistic calculations reveal the considerable influence of the strains induced by the Si shell on the hole transport, whatever the NW orientation. The enhancement of electron-phonon interactions by confinement, which usually degrades the mobility in NWs, is therefore outbalanced by the effect of strains.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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