ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • American Institute of Physics (AIP)  (11)
  • Springer Nature
  • 2000-2004
  • 1995-1999  (12)
  • 1990-1994
  • 1970-1974
  • 1935-1939
  • 1997  (12)
  • 1
    Electronic Resource
    Electronic Resource
    A three-dimensional wave-packet method for the CH overtone spectroscopy and intramolecular vibrational relaxation dynamics of the fluoroform molecule (1997)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 106 (1997), S. 445-456 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The overtone spectroscopy and intramolecular vibrational relaxation dynamics of CH chromophore in the fluoroform molecule is studied by a three-dimensional (3D) time-dependent wave-packet method, and the results are compared with the experiment and with those of a 2D (stretch–bend) wave-packet method. A third mode (CF symmetrical stretch) is included in order to explain the long time dynamics and the combination bands between the CF stretch fundamental and the Fermi polyad frequencies. The comparison with the 2D study is carried out by the use of a full set of dynamical and spectroscopic variables, based on the autocorrelation function of the bright states of each polyad. The spectroscopic variables then follow by Fourier transforming the autocorrelation function, while the dynamical ones emerge via survival probability in the frame of the dynamical statistical ensemble. These include several relaxation times and the number of cells and rates of phase–space exploration. The specific effect of the third mode is monitored by following the reduced dynamics of the system irrespective of the polyad stretch–bend dynamics, through population evolution. Dynamical results clearly reveal the third mode effects at very short and long times. In the last regime, we can observe a great span of different behaviors, depending on how the third mode excited states are involved. This richer variety of dynamical patterns cannot be observed in a two-mode model and justifies the present work. The spectroscopic results of both models are in good agreement with the experimental results. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.473386
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Erratum: "Exponential critical-state model for magnetization of hard superconductors'' [J. Appl. Phys. 67, 3430 (1990)] (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1017-1017 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365547
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Neutron irradiation defects in gallium sulfide: Optical absorption measurements (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6651-6656 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gallium sulfide single crystals have been irradiated with different thermal neutron doses. Defects introduced by neutron irradiation turn out to be optically active, giving rise to absorption bands with energies ranging from 1.2 to 3.2 eV. Bands lying in the band-gap exhibit Gaussian shape. Their energies and widths are independent of the irradiation dose, but their intensities are proportional to it. Thermal annealing is completed in two stages, ending at around 500 and 720 K, respectively. Centers responsible for the absorption bands are proposed to be gallium-vacancy-galliuminterstitial complexes in which the distance between the vacancy (acceptor) and the interstitial (donor) determines the energy and intensity of the absorption band, as well as the annealing temperature. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365204
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Competing magnetic interactions in manganese perovskites : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 5481-5483 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural and magnetotransport properties of L2/3A1/3MnO3 (A=Ca, Sr) oxides reveal the gradual increase of the magnetic frustration when bending the Mn–O–Mn bonds. The relative strength of competing magnetic interactions and thus the ferromagnetic ordering temperature TC are controlled not only by R0 (R0 is the mean radius of the lanthanides) but also by the electronegativity of the divalent cation. Consequently, the curve TC(R0) is not universal but it is sensitive to the alkaline ions. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364633
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Nonuniform domain magnetization in CoFeSiB amorphous ribbons : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4072-4074 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The low field ac susceptibility, χ=χ′−jχ′′, and domain structures of as-cast, stress relieved, and field annealed CoFeSiB amorphous ribbons are studied in the remanence state. An eddy current loss analysis is made based on a model which combines the contributions of domain wall displacements (DWD) and domain magnetization rotations (DMR). It is found that although having similar longitudinal bar domain structures, χ of the field annealed ribbon is due to DWD, but it is dominated by DMR for the first two, which indicates a nonuniform magnetization in the domains. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365081
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Growth kinetics and morphology of high quality AlN grown on Si(111) by plasma-assisted molecular beam epitaxy (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4681-4683 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlN layers were grown on Si(111) substrates by plasma-assisted molecular beam epitaxy. Crystal quality was assessed by atomic force microscopy and high resolution x-ray diffraction. The III/V ratio and the growth temperature, rather than thickness and growth rate, are found to be critical parameters to achieve good quality AlN layers. III/V ratios close to stoichiometry, and high growth temperatures (≥900 °C) lead to optimal AlN layers. The growth rate is barely modified when growth temperature changes from 780 to 920 °C, but the growth mode and surface roughness are strongly affected. Optimal AlN layers have full-widths at half-maximum values of 10 arcmin, and an average surface roughness of 48 Å. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366208
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Structural defects in Hg1−xCdxI2 layers grown on CdTe substrates by vapor phase epitaxy (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4889-4891 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hg1−xCdxI2 20–25-μm-thick layers with a uniform composition in the range of x=0.1–0.2 were grown on CdTe substrates by vapor phase epitaxy (VPE). The growth was carried out using an α-HgI2 polycrystalline source at 200 °C and in the time range of 30–100 h. The layers were studied by scanning electron microscopy (SEM) and high resolution synchrotron x-ray topography (SXRT). The SEM and SXRT images of Hg1−xCdxI2 VPE layers allow one to identify the defects affecting the layer structure. The two main types of structural defects in the layers are subgrain boundaries and densely spaced striations similar to those referred generally to as vapor grown HgI2 bulk crystals. The effect of the growth time on these defects has been analyzed and on the basis of this it has been possible to grow Hg1−xCdxI2 layers with low defect density.© 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366352
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Planar optical waveguides fabricated by molecular beam epitaxy of Pb-doped CaF2 layers (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2079-2081 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular beam epitaxy of rare-earth-doped CaF2 layers has already been demonstrated. Optical waveguiding can be obtained if the refractive index variation due to the rare-earth doping is high enough. To tailor separately the refractive index profile and the active ion profile in the layer, the former should be modified by a passive impurity. This letter demonstrates that passive waveguides can be obtained in CaF2 epitaxial layers by the introduction of moderate concentrations of Pb. Monomode planar waveguides with a steplike index variation ranging from 0.2% to 1.2% (relative to CaF2) have been grown and characterized, paving the way for the independent engineering of refractive index and active center distributions in optical active waveguide devices made of this kind of material. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118956
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Substrate effect on CdTe layers grown by metalorganic vapor phase epitaxy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1314-1316 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdTe layers were grown by metalorganic vapor phase epitaxy (MOVPE) on different substrates like sapphire, GaAs, and CdTe wafers. The growth was carried out at the temperature 340 °C and time in the range of 2–4 h using dimethyl-cadmium and diisopropil-tellurium as precursors. The layers were studied by scanning electron microscopy, Rutherford backscattering spectroscopy, and high resolution low-temperature photoluminescence spectroscopy. The surface morphology and RBS and PL spectra of CdTe MOVPE layers are reported and the substrate effect on the layer properties is demonstrated. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118522
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Outdoor evaluation of the thermoluminescent properties of α-Al2O3 crystals (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1674-1675 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, the thermoluminescence response of α-Al2O3 under solar irradiation has been studied. This material exhibits selective excitation with a narrow response, with a maximum at 313 nm, in the ultraviolet-B range. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118200
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...