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  • 1
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    Centroid moment tensor solutions for deep earthquakes predating the digital era: the World-Wide Standardized Seismograph Network dataset (1962-1976) (1997)
    In:  Physics of the Earth & Planetary Interiors, Taipei, Ges. f. Geowissenschaften e.V., vol. 99, no. 1-2, pp. 121-130, pp. 1858, (ISSN 0343-5164)
    Details
    Publication Date: 1997
    Keywords: Moment tensor ; Earthquake catalog ; Fault plane solution, focal mechanism ; Ekstroem ; Ekstrom ; PEPI
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    BIBLIOGRAPHY SEISMOLOGY
  • 2
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    Accessing genetic information with high-density DNA arrays (1996)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1996-10-25
    Description: Rapid access to genetic information is central to the revolution taking place in molecular genetics. The simultaneous analysis of the entire human mitochondrial genome is described here. DNA arrays containing up to 135,000 probes complementary to the 16.6-kilobase human mitochondrial genome were generated by light-directed chemical synthesis. A two-color labeling scheme was developed that allows simultaneous comparison of a polymorphic target to a reference DNA or RNA. Complete hybridization patterns were revealed in a matter of minutes. Sequence polymorphisms were detected with single-base resolution and unprecedented efficiency. The methods described are generic and can be used to address a variety of questions in molecular genetics including gene expression, genetic linkage, and genetic variability.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Chee, M -- Yang, R -- Hubbell, E -- Berno, A -- Huang, X C -- Stern, D -- Winkler, J -- Lockhart, D J -- Morris, M S -- Fodor, S P -- 5RO1HG00813/HG/NHGRI NIH HHS/ -- New York, N.Y. -- Science. 1996 Oct 25;274(5287):610-4.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Affymetrix, 3380 Central Expressway, Santa Clara, CA 95051, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/8849452" target="_blank"〉PubMed〈/a〉
    Keywords: Algorithms ; Base Composition ; Base Sequence ; Cloning, Molecular ; DNA, Mitochondrial/*genetics ; Fluorescein ; Fluoresceins ; Gene Expression ; Genetic Variation ; *Genome ; Humans ; Mitochondria/*genetics ; *Nucleic Acid Hybridization ; *Oligonucleotide Probes ; Phycoerythrin ; Polymerase Chain Reaction ; Polymorphism, Genetic ; Sequence Analysis, DNA
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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    PAPER CURRENT
  • 3
    Electronic Resource
    Electronic Resource
    Modeling the post-burn-in abnormal base current in AlGaAs/GaAs heterojunction bipolar transistors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7348-7352 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The base current of AlGaAs/GaAs heterojunction bipolar transistor subjected to a long burn-in test often exhibits an abnormal characteristic with an ideality factor of about 3, rather than a normal ideality factor between 1 and 2, in the midvoltage range. We develope an analytical model to investigate the physical mechanisms underlying such a characteristic. Consistent with the finding of an experimental work reported recently, our model calculations show that the recombination current in the base has an ideality factor of about 3 in the midvoltage range and that such a current is responsible for the observed abnormal base current in heterojunction bipolar transistor after a long burn-in test. Post-burn-in data measured from two different heterojunction bipolar transistors are also included in support of the model. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361451
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  • 4
    Electronic Resource
    Electronic Resource
    Extremely low temperature formation of silicon dioxide on gallium arsenide (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5788-5792 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article demonstrates the growth of silicon dioxide (SiO2) on a gallium arsenide (GaAs) substrate by use of the liquid phase deposition (LPD) method at extremely low temperature (∼40 °C). This method cannot only grow SiO2 but it can also obtain good quality and reliability due to the suppression of interdiffusion in such a low temperature process. The deposition rate of LPD-SiO2 on GaAs is up to 1265 Å/h. The refractive index of the LPD-SiO2 film on GaAs is about 1.42 with growth at 40 °C. When the LPD-SiO2 film on the GaAs substrate is used to fabricate a metal–oxide–semiconductor capacitor with a device area of 0.3 cm2, the surface charge density (Qss/q) is about 3.7×1011 cm−2 and the leakage current is 43.3 pA at −5 V. A proposed mechanism for the LPD of SiO2 on GaAs is also presented. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366445
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  • 5
    Electronic Resource
    Electronic Resource
    Study of ultrathin Y3Fe5O12/Gd3Ga5O12 superlattices (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 854-856 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality Y3Fe5O12/Gd3Ga5O12 (YIG/GGG) superlattices have been grown on (111)GGG substrates by pulsed laser deposition. The superlattices are investigated with the thickness of the YIG layer varied from six to one unit cells while keeping the GGG layer fixed at one unit cell. The thicknesses of the YIG and GGG layers are confirmed with grazing angle x-ray reflectivity (GAXR). The good quality of the samples is indicated by the small interface roughness, no more than 6 A(ring), also measured with GAXR. While the magnetization of the samples decreases when the thickness of the YIG layer is decreased, the superlattice remains magnetic even when the YIG layer is only one unit cell. Ferrimagnetic resonance indicates that there exists a surface anisotropy favoring in-plane magnetization. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117914
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  • 6
    Electronic Resource
    Electronic Resource
    Study of a novel C60−2,6-bis(2,2-bicyanovinyl)pyridine complex thin film (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2441-2443 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel complex thin film of 2,6-bis(2,2-bicyanovinyl)pyridine (BDCP) and C60 has been fabricated by vacuum coevaporation of BDCP and C60 from two different evaporation sources. The C60-BDCP thin films have shown totally different optical and electronic properties from the films of both the BDCP and C60. Stable and reproducible electric bistable properties have been observed in sandwichlike device Ag/C60-BDCP/Ag. The films are characterized by several methods including high-resolution scanning electron microscopy, x-ray diffraction, UV-visible absorption and infrared transmission spectroscopy. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116161
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  • 7
    Electronic Resource
    Electronic Resource
    Enhancement of electron emission efficiency of Mo tips by diamondlike carbon coatings (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1666-1668 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of diamondlike carbon (DLC) films coated by pulsed laser deposition technique on the electron emission characteristics of Mo tips is examined. Turn-on voltage (V0) was lowered from 40 V for Mo tips to 22 V for DLC coated Mo tips and maximum anode current (IA) was increased from ∼44 μA for Mo tips to ∼2.0 mA for DLC coated Mo tips. Maximum anode current (IA) for the DLC coated Mo tips, however, decreased during operation. Raman spectroscopy and selected area diffraction (SAD) in transmission electron microscopy (TEM) revealed that the degradation of electron emission behavior can be ascribed to the conversion of sp3-bonds, characteristic for diamond, to sp2-bonds, characteristics for graphite. The transformation of the structure is assumed to be induced by the local heat from the DLC coatings. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115899
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  • 8
    Electronic Resource
    Electronic Resource
    The adsorption and desorption of water on single crystal MgO(100): The role of surface defects (1996)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 105 (1996), S. 1295-1298 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Adsorption and desorption of water on well-ordered and sputter-damaged single crystal MgO(100) surfaces were studied by a combination of molecular beam reflection and temperature programmed desorption techniques. Adsorption exhibits precursor-mediated kinetics and desorption exhibits a strong dependence on substrate treatment, demonstrating the importance of surface defects. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.471993
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  • 9
    Electronic Resource
    Electronic Resource
    Coadsorption of hydrogen with ethylene and acetylene on Si(100)-(2×1) (1996)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 105 (1996), S. 5605-5617 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The adsorption, desorption, and thermal decomposition of acetylene and ethylene on the Si(100)-(2×1) surface have been investigated with emphasis on the modifications induced by coadsorbed hydrogen. Based on high-resolution electron energy loss spectroscopy (HREELS), temperature programmed desorption spectroscopy (TPD), low-energy electron diffraction (LEED), and Auger electron spectroscopy (AES), we show that the adsorption of acetylene and ethylene is blocked by preadsorbed hydrogen leading to a hydrocarbon saturation coverage which decreases linearly with hydrogen precoverage. At low temperatures preadsorbed hydrogen has no influence on the surface chemistry of acetylene or ethylene. At approximately 550 K, coadsorbed hydrogen induces decomposition of ethylene which is not observed in the absence of hydrogen. After postexposures of an ethylene-saturated Si(100)-(2×1) surface to gas-phase atomic hydrogen with fluences below 5×1014 cm−2, the ethylene is essentially unperturbed at low surface temperatures with partial decomposition upon heating as for preadsorbed hydrogen. Higher postexposures of atomic hydrogen lead to Si–C bond cleavage and the formation of ethyl. The desorption of molecular ethylene is then up shifted by approximately 100 K. The experimental results and observed reaction intermediate are explained by an elemental adsorption and reaction model. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.472817
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  • 10
    Electronic Resource
    Electronic Resource
    The evaporation rate, free energy, and entropy of amorphous water at 150 K (1996)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 105 (1996), S. 240-244 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Measurement of the rates of evaporation of amorphous water (a) and ice (i) near 150 K can be interpreted as giving a measure of their free energy difference, ΔaiG (150 K)=1100±100 J/mol, which, together with the known enthalpy difference and heat capacity data, suggests a residual entropy difference of ΔaiS (0)=−0.7±2.2 J/(K mol) at absolute zero. Previous theoretical estimates of ΔaiS (0), which are much larger, did not allow the amorph to be connected with normal liquid water by a reversible thermodynamic path at atmospheric pressure. The present value allows such a connection. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.471869
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