ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract The cross-section of multilayered Al0.5Ga0.5As/GaAs epitaxial structure was investigated by atomic force microscopy (AFM). For the first time, a 5% NaClO etchant was employed to discern each layer and a clear cross-sectional image of the multilayered epitaxial structure was obtained in less than 3 s etching time. The AFM image using 0.1 m HCl was poorer than that using 5% NaClO; this is attributed to the difference in etching selectivity between HCl and NaClO solution.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00356327
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