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  • American Institute of Physics (AIP)  (4)
  • Blackwell Publishing Ltd  (2)
  • Springer Nature
  • 2020-2021
  • 2000-2004
  • 1995-1999  (6)
  • 1960-1964
  • 1955-1959
  • 1995  (6)
Collection
Publisher
Years
  • 2020-2021
  • 2000-2004
  • 1995-1999  (6)
  • 1960-1964
  • 1955-1959
Year
  • 1
    Electronic Resource
    Electronic Resource
    The MD Shell and its use to develop Dust-Expert (1995)
    Oxford, UK : Blackwell Publishing Ltd
    Expert systems 12 (1995), S. 0 
    Details
    ISSN: 1468-0394
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Computer Science
    Notes: Abstract: In this paper we describe TheMD (The Methods Designer) shell and its use in the development of an expert system, known as Dust-Expert, for the relief of dust explosions. We begin by providing the motivation for the development of TheMD Shell by evaluating a prototype implementation of Dust-Expert using a conventional shell. This evaluation is carried out in terms of the transparency, reliability and extensibility of the system.The lessons learned from this evaluation have led to the development of TheMD Shell. We describe the main features of the shell which include more appropriate schemas, more complete explanation capabilities, a ranking scheme and equation-solving capabilities. We illustrate the use of the schemas and the importance of the equation-solving capabilities by examples from the domain of dust explosions. We also provide a formal specification of the ranking scheme that we adopt. We conclude by highlighting the benefits of our approach in comparison to the usual process of developing knowledge-based systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1468-0394.1995.tb00112.x
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  • 2
    Electronic Resource
    Electronic Resource
    Persistent photoconductivity in thin undoped GaInP/GaAs quantum wells (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 171-173 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Persistent photoconductivity has been observed at low temperatures in thin, unintentionally doped GaInP/GaAs/GaInP quantum wells. The two-dimensional electron gas was studied by low field Hall and Shubnikov–de Haas effects. After illumination with red light, the electron concentration increased from low 1011 cm−2 to more than 7×1011 cm−2 resulting in an enhancement of both the carrier mobility and the quantum lifetime. The persistent photocarriers cannot be produced by DX-like defects since the shallow dopant concentration in the GaInP layers is too low to produce the observed concentration. We suggest that the persistent carriers are produced by photoionization of deep intrinsic donors in the GaInP barrier layer. We also report observation of a parallel conduction path in GaInP induced by extended illumination. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113553
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  • 3
    Electronic Resource
    Electronic Resource
    A simple velocity model for low-pressure metalorganic chemical vapor deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 869-871 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new simple transport model is used to describe the dependence of the electrical characteristics of the epitaxial layer on the growth parameters in low-pressure metalorganic chemical vapor deposition. The important parameters of this model are the mean velocity of the gases and the [V]/[III] ratio. Undoped GaAs epitaxial layers are prepared at various operating pressures. A semi-empirical correlation relating the reactor pressure and flow rate is established that dictates the operating conditions for a single set of film properties. This enables growth of a material with constant characteristics while pressure can be varied. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115532
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  • 4
    Electronic Resource
    Electronic Resource
    Se chemical passivation and annealing treatment for GaAs Schottky diode (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2125-2127 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Se chemical passivation [(NH4)2S+Se] for GaAs Schottky diodes is presented. We have found that our (NH4)2S+Se passivated Schottky diodes have more than one order of magnitude higher forward current density than the (NH4)2Sx passivated ones. In rapid thermal annealing treatment, an initial decrease and then increase of forward current density for (NH4)2Sx passivated diodes is observed. For the (NH4)2S+Se and (NH4)OH treated diodes, a steady decrease of Schottky barrier height with increased annealing temperature is observed. With or without annealing treatment, the (NH4)2S+Se passivated diodes have the lowest barrier height. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113924
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  • 5
    Electronic Resource
    Electronic Resource
    Asymptotic study and weakly nonlinear analysis at the onset of Rayleigh–Bénard convection in Hele–Shaw cell (1995)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 7 (1995), S. 926-934 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The aim of this paper is the derivation of the Ginzburg–Landau equation [as introduced by A. C. Newell and J. A. Whitehead, J. Fluid Mech. 38, 279 (1969)] from the hydrodynamic equations for an infinite Hele–Shaw cell. The dimensional analysis and the asymptotic study allow one to distinguish two nonlinear formulations, each one depends on the order of magnitude of the Prandtl number. The first formulation corresponds to the case Pr=O(1) or Pr(very-much-greater-than)1, whereas the second corresponds to the case Pr=O(ε*2), where ε*(very-much-less-than)1 denotes the aspect ratio of the cell. Here a weakly nonlinear analysis is performed for the two formulations. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.868568
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  • 6
    Electronic Resource
    Electronic Resource
    Detection and differentiation of the gene for toxin co-regulated pili (tcpA) in Vibrio cholerae non-O1 using the polymerase chain reaction (1995)
    Oxford, UK : Blackwell Publishing Ltd
    FEMS microbiology letters 125 (1995), S. 0 
    Details
    ISSN: 1574-6968
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Abstract The polymerase chain reaction has been used to differentiate the gene which encodes the toxin co-regulated pili (tcpA) of the El Tor and classical biotypes of Vibrio cholerae O1. The same PCR primers were applied to strains belonging to non-O1 serogroups that produced cholera toxin. The size of fragment amplified was either identical to the tcpA of biotype El Tor (471 bp) or to the tcpA of biotype classical (617 bp). All strains belonging to the novel epidemic serogroup O139 generated a 471-bp fragment identical to El Tor tcpA. The present study suggests that there may be an association between non-O1 serogroup and tcpA type.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1574-6968.1995.tb07359.x
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