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  • 1989  (63)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 299-304 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An attempt is made to investigate the thermoelectric power of the electrons under strong magnetic quantization in n-channel inversion layers of ternary chalcopyrite semiconductors at low temperatures, taking n-channel inversion layers on CdGeAs2 as examples, under both the weak and strong electric field limits, respectively. We have formulated the magneto-thermo power on the basis of newly derived two-dimensional electron energy spectra for both the limits by considering various types of anisotropies of the band parameters within the frame work of k(large-closed-square)p formalism. It has been observed that, the magneto-thermo power decreases with increasing surface electric field and decreasing quantizing magnetic field in an oscillatory manner for both the limits. The crystal field parameter enhances the numerical magnitudes and the corresponding results for n-channel inversion layers of parabolic semiconductors have also been obtained as special cases from the generalized expressions under certain limiting conditions.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4309-4316 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An attempt is made to study the Einstein relation for the diffusivity-mobility ratio of the electrons in degenerate n-type small-gap semiconductors under strong magnetic field on the basis of three-band Kane model without any approximations of band parameters and incorporating the electron spin and broadening of Landau levels, respectively. It is found, taking n-Hg1−xCdxTe as an example, that the Einstein relation exhibits an oscillatory magnetic field dependence due to Shubnikov–de Haas effect and decreases with increasing alloy composition. Besides the same ratio increases with increasing electron concentration and is in close agreement with the suggested experimental method of determining the Einstein relation in degenerate semiconductors having arbitrary dispersion laws. In addition, the corresponding well-known results of parabolic semiconductors both in the presence and absence of magnetic field have been obtained from the generalized expressions under certain limiting conditions.
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 2130-2135 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A method is developed for the simultaneous determination of the equation of state and heat capacity of a gas over a wide range of pressure and temperature. This is based on stepwise construction of pT isochores starting from one experimental reference pV isotherm and using speed-of-sound data of the gas as a function of pressure and temperature. The application of the method is illustrated by computing the density and heat capacity of argon at temperatures from 148.15 to 298.15 K and at pressures from 100 to 1000 MPa. In the region of overlap, the calculated densities are found to be in good agreement with those obtained previously from direct measurements.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 5377-5386 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Molecular dynamics (MD) simulations have been performed on a model bilayer of 48 chain molecules with fixed head groups and periodic boundary conditions in the lateral direction. The effects of packing density and temperature on the extent of spatial and temporal correlations in the ensemble have been studied by analyzing the trajectories from the MD simulations. Quantities such as order parameters, number density contours, trans–gauche statistics and structure factors are evaluated as a function of distance from the plane containing the constrained head groups. The ensemble having the smallest area of 20.625 A(ring)2/molecule can be characterized as having three dimensional order, even at high temperatures, with a few gauche defects. Decreasing the packing density of the chains results in the increase of the number of gauche defects, especially at the chain extremities along with a decrease in the extent of spatial and temporal correlations. Interestingly, shorter interchain spacings are evident in the middle of the layer which can be attributed to clusters of chains lying alongside less dense domains. At temperatures lower than 300 K, the ensemble having the largest area of 26.125 A(ring)2/molecule reveals a rather complex interplay between chains wherein the lateral arrangement of the methylene units across the layer is transient and varies as a function of distance from the plane of the head groups. At temperatures higher than 300 K, thermal motion increases chain separation which effectively suppresses cluster formation.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1494-1496 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An electron cyclotron resonance (ECR) plasma source has been used with methane gas to perform carbon delta-doping in GaAs grown by molecular beam epitaxy (MBE). The ECR plasma source is installed on a chemical vapor deposition chamber which is vacuum connected to a conventional MBE apparatus. Good surface morphologies, high sheet carrier densities (1–7×1012 cm−2), and reasonable hole mobilities (75–110 cm2/V s) are obtained.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1016-1018 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial layers of InSb have been grown on Si substrates by molecular beam epitaxy. Room-temperature electron mobilities are 48 000 and 39 000 cm2/V s for 3.2 μm-thick InSb with and without a thin GaAs buffer, respectively. The corresponding carrier concentrations are 2.2×1016 and 2.7×1016 cm−3. A sample with an InSb thickness of 8 μm exhibited room-temperature mobilities as high as 55 000 cm2/V s with carrier concentrations of about 2.0×1016 cm−3. A sharp band-edge transmission spectrum is observed at room temperature for the 8 μm layer.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2571-2573 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have estimated the recombination velocity and minority-carrier diffusion length at and near molecular-beam-epitaxial GaAs regrowth interfaces. The diffusion length in the regrown layers is ∼1–3 μm and is lowered to 0.3 μm at the interface. The interface recombination velocity is ∼105 cm/s. These parameters are better for a sample which was ion milled and lamp annealed before regrowth, compared to a sample which was wet-chemical etched and annealed in the growth chamber under arsenic flux before regrowth.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2445-2450 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silica particle formation and growth in a high-temperature aerosol reactor has been studied. A novel sampling probe has been used to obtain the evolution of the silica particle size distribution in the reactor. A simple model approximating the particle size distribution by a unimodal lognormal function was used to describe the aerosol behavior in the reactor. Good agreement of the integral properties of the aerosol size distribution was obtained between theory and experiment. Reasonable agreement was also obtained with the prediction of more sophisticated models for aerosol dynamics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 1269-1273 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An apparatus for the measurement of sound velocity in gases up to pressures of 10 kbar and down to temperatures of 77 K is described. Important features of the experimental setup include a specially designed ultrasonic cell with double reflectors, based on the phase comparison pulse-echo technique, and a vacuum type of cryostat using a cold finger system for temperature control. Detailed measurements on argon down to the melting line show that the method is capable of giving a precision of 0.02% for the sound velocity.
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